Abstract: A monitoring method and a device for chemical mechanical polishing are provided. The method includes: loading a to-be-polished wafer with a carrier, attaching the wafer to a polishing pad on a polishing platen, and supplying slurry between the polishing pad and the wafer with a slurry supply apparatus; conditioning the polishing pad with a conditioner, and obtaining strain data of the conditioner, wherein the conditioner includes a drive arm and a conditioning head, the conditioning head conditions the polishing pad with the support of the drive arm, the drive arm undergoes a strain in response to a force applied by the the conditioning head, and the strain data is used to indicate a strain value of the drive arm; determining a conditioning deviation based on the strain data, and determining a wear state of the polishing pad based on the conditioning deviation.

Abstract: A method for measuring a thickness of a metal film, a polishing device, and a medium are provided. The method includes: determining a reference thickness of the metal film based on measurement signals, the measurement signals being indicative of measured thicknesses of different positions on the metal film; determining sub-adjustment parameters based on an adjustment parameter included in the reference thickness, wherein the adjustment parameter includes sub-adjustment parameters corresponding to topographies of different edges of the metal film; and adjusting, based on the sub-adjustment parameters, a coordinate value of a sampling point in a to-be-processed area of the metal film, processing, based on an adjusted coordinate value, an amplitude of the signal corresponding to the sampling point in the measurement signals, and determining a thickness of the metal film based on the processed signal amplitude.

Abstract: An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.

Abstract: An apparatus for chemical-mechanical polishing is provided, including: a plurality of polishing sections spaced apart from one another, each polishing section including: a bracket, a carrier head and a platen, the carrier head being disposed on the bracket and configured to move between a polishing position and a conveying position, in which when the carrier head is located at the polishing position, the carrier head is located above the platen; and a conveying assembly, the conveying assembly including: a rotating plate and a plurality of loading and unloading tables, the plurality of loading and unloading tables being spaced apart from one another, disposed on the rotating plate and configured to rotate along with the rotating plate, in which when the carrier head is located at the conveying position, the carrier head is corresponding to one of the plurality of loading and unloading tables.

Abstract: A device for globally measuring a thickness of a metal film (901), comprises: a base (10); a rotating unit (20) comprising a fixed member (21) fixed on the base (10) and a rotating member (22) having a rotating joint (23); a working table (50) fixed on the rotating member (22) and having a vacuum passage which is formed therein and connected with the rotating joint (23); a linear driving unit (30) including a guide rail (31) fixed on the base (10) and a sliding block (32) slidable along the guide rail (31); a cantilever beam (40) disposed horizontally and defining a first end fixed with the sliding block (32) and a second end; a measuring head (80) connected to the second end of the cantilever beam (40), facing a surface of the working table (50) and having an eddy current probe (82) disposed therein.

Abstract: A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on a

Abstract: A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a “thickness” direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.

Abstract: A measuring device for measuring a film thickness of a silicon wafer (1) comprises: position and velocity sensors (4) linearly arranged along a longitudinal direction into first and second position and velocity sensor arrays spaced apart from each other in a lateral direction, in which the position and velocity sensors (4) in the first position and velocity sensor array are in one-to-one correspondence with the position and velocity sensors (4) in the second position and velocity sensor array in the lateral direction; an eddy current sensor (2) disposed in a symmetrical plane between the first position and velocity sensor array and the second position and velocity sensor array and perpendicular to the lateral direction; and a controller connected to the position and velocity sensors (4) and the eddy current sensor (2) respectively for controlling measurement of the thickness of the film according to detection signals from the position and velocity sensors (4) and the eddy current sensor (2).

Abstract: A device for globally measuring a thickness of a metal film (901), comprises: a base (10); a rotating unit (20) comprising a fixed member (21) fixed on the base (10) and a rotating member (22) having a rotating joint (23); a working table (50) fixed on the rotating member (22) and having a vacuum passage which is formed therein and connected with the rotating joint (23); a linear driving unit (30) including a guide rail (31) fixed on the base (10) and a sliding block (32) slidable along the guide rail (31); a cantilever beam (40) disposed horizontally and defining a first end fixed with the sliding block (32) and a second end; a measuring head (80) connected to the second end of the cantilever beam (40), facing a surface of the working table (50) and having an eddy current probe (82) disposed therein.

Abstract: A measuring device for measuring a film thickness of a silicon wafer (1) comprises: position and velocity sensors (4) linearly arranged along a longitudinal direction into first and second position and velocity sensor arrays spaced apart from each other in a lateral direction, in which the position and velocity sensors (4) in the first position and velocity sensor array are in one-to-one correspondence with the position and velocity sensors (4) in the second position and velocity sensor array in the lateral direction; an eddy current sensor (2) disposed in a symmetrical plane between the first position and velocity sensor array and the second position and velocity sensor array and perpendicular to the lateral direction; and a controller connected to the position and velocity sensors (4) and the eddy current sensor (2) respectively for controlling measurement of the thickness of the film according to detection signals from the position and velocity sensors (4) and the eddy current sensor (2).

Abstract: A wafer-transfer device for a chemical-mechanical polishing apparatus includes a base and lifting frame. A first cylinder is connected to a lower portion of the lifting frame to lift it and includes a piston rod passing through the lower portion of the lifting frame and fixed to the base. A basin-shaped contraposition ring is mounted onto an upper portion of the lifting frame via a spring. An inner edge of a top of the contraposition ring defines a curved surface adapted to a contour of a polishing head of the chemical-mechanical polishing apparatus. A wafer support is disposed above the contraposition ring. A second cylinder is mounted onto the contraposition ring and includes a piston rod passing through the contraposition ring and connected to a bottom of the wafer support to lift it. Respective axes of the wafer support, second cylinder, and contraposition ring coincide with one another.

Abstract: A method for measuring a film thickness of a film on an edge of a wafer, comprising: off-line detecting a film at a detection point on the wafer by a four-point probe method to obtain a real film thickness of the film at the detection point, and detecting a distance from the detection point to a center of the wafer using a length measurement, in which the detection point is located between the center of the wafer and a edge point of the wafer; detecting the film at the detection point using an eddy current transducer to obtain a detected film thickness of the film at the detection point; determining a film thickness measuring correction factor according to the real film thickness, the detected film thickness at the detection point and the distance from the detection point to the center of the wafer; and measuring the film on an edge of the wafer using the eddy current transducer to obtain a measured film thickness of the film on the edge of the wafer and correcting the measured film thickness of the film on a

Abstract: A chemical-mechanical polishing machine includes a work table, polishing platen mounted onto the work table, pad conditioner and slurry-delivery device mounted on the work table and disposed near the polishing platen, and polishing-head support mounted on the work table and including a base plate and supporting side plates. The base plate is formed with a groove in a “thickness” direction. A loading and unloading table is mounted on the work table, disposed below the base plate, and opposed to the polishing platen. A polishing head is rotatably disposed on the polishing-head support, movable in the longitudinal direction, and passes through the groove to extend downwardly. A robotic manipulator is disposed near the work table for placing a wafer on the loading and unloading table and taking the wafer away from it. A chemical-mechanical polishing apparatus includes an array of a plurality of the machine.

Abstract: A device for measuring a thickness of a slurry used in a chemical mechanical polishing apparatus and a method using the same are provided. The chemical mechanical polishing apparatus comprises a polishing head (10), a rotary table (20), a polishing platen (30) and a polishing pad (40). The device for measuring the thickness of the slurry comprises: a distance sensor (50) disposed in the polishing platen (30) for measuring a distance between the distance sensor (50) and a wafer (11) in the polishing head (10); a processing unit (70) (60) disposed in the rotary table (20) and connected to the distance sensor (50) for converting a measuring signal from the distance sensor (50) into standard electrical signal; a processing unit (70) connected to distance converters (60) for acquiring the standard electrical signal to obtain a thickness of the slurry between the polishing head (10) and the polishing pad (40).

Abstract: The present disclosure discloses a device for measuring physical parameters of a slurry used in a chemical mechanical polishing apparatus and measuring method using the same. The chemical mechanical polishing apparatus comprises a polishing head, a rotary table, a polishing platen and a polishing pad having a through-hole. The device for measuring physical parameters of slurry comprises: a sensor disposed in the polishing platen and adapted to contacted the slurry via the through-hole of the polishing pad for measuring the physical parameters of the slurry; a converter disposed in the rotary table and coupled to the sensor for converting a measuring signal of the sensor into a standard electrical signal; and a processing unit coupled to the converter for acquiring the standard electrical signal to calculate physical parameters of the slurry.

Abstract: The pad conditioner head for conditioning a polishing pad comprises a bearing seat, a spindle, a protective cover, an annular pressure plate, a self-adaptive platen, a diamond disk and a flexible ring. A flange is mounted on the lower end of the spindle. A press ring is mounted onto a lower surface of the flange. The flexible ring has an upper edge sandwiched between the flange and the press ring and a lower edge sandwiched between the protective cover and the annular pressure plate. The flexible ring, the flange, the annular pressure plate and the self-adaptive platen define a sealed chamber (M). The protective cover, the annular pressure plate, the self-adaptive platen and the diamond disk are rotatable along with the spindle through the flexible ring and movable in an up and down direction relative to the spindle via a deformation of the flexible ring.