Patents by Inventor Xing Gu

Xing Gu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11152677
    Abstract: Integration of self-biased magnetic circulators with microwave devices is disclosed herein. In microwave and other high-frequency radio frequency (RF) applications, a magnetic circulator can be implemented with a smaller permanent magnet. Aspects disclosed herein include a process flow for producing a self-biased circulator in an integrated circuit chip. In this regard, a magnetic circulator junction can be fabricated on an active layer of a semiconductor wafer. A deep pocket or cavity is formed in an insulating substrate under the active layer. This cavity is then filled with a ferromagnetic material such that the circulator junction is self-biased within the integrated circuit chip, eliminating the need for an external magnet. The self-biased circulator provides high isolation between ports in a smaller integrated circuit.
    Type: Grant
    Filed: June 3, 2019
    Date of Patent: October 19, 2021
    Assignee: Qorvo US, Inc.
    Inventors: Yongjie Cui, Xing Gu, Andrew Arthur Ketterson, Cathy Lee, Xing Chen
  • Patent number: 10854810
    Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.
    Type: Grant
    Filed: January 15, 2020
    Date of Patent: December 1, 2020
    Assignee: Qorvo US, Inc.
    Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
  • Patent number: 10749009
    Abstract: Fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors by selective area regrowth is disclosed. A demand for high efficiency components with highly linear performance characteristics for radio frequency (RF) systems has increased development of GaN transistors and, in particular, aluminum-gallium-nitride (AlGaN)/GaN high electron mobility transistor (HEMT) devices. A method of fabricating a high efficiency, high linearity N-polar HEMT device includes employing a selective area regrowth method for forming a HEMT structure on the Nitrogen-face (N-face) of a GaN buffer, a natural high composition AlGaN/AlN back barrier for carrier confinement, a thick undoped GaN layer on the access areas to eliminate surface dispersion, and a high access area width to channel width ratio for improved linearity. A problem of impurities on the GaN buffer surface prior to regrowth creating a leakage path is avoided by intentional silicon (Si) doping in the HEMT structure.
    Type: Grant
    Filed: May 16, 2019
    Date of Patent: August 18, 2020
    Assignee: Qorvo US, Inc.
    Inventors: Xing Gu, Jinqiao Xie, Cathy Lee
  • Publication number: 20200152859
    Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.
    Type: Application
    Filed: January 15, 2020
    Publication date: May 14, 2020
    Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
  • Publication number: 20200153071
    Abstract: Integration of self-biased magnetic circulators with microwave devices is disclosed herein. In microwave and other high-frequency radio frequency (RF) applications, a magnetic circulator can be implemented with a smaller permanent magnet. Aspects disclosed herein include a process flow for producing a self-biased circulator in an integrated circuit chip. In this regard, a magnetic circulator junction can be fabricated on an active layer of a semiconductor wafer. A deep pocket or cavity is formed in an insulating substrate under the active layer. This cavity is then filled with a ferromagnetic material such that the circulator junction is self-biased within the integrated circuit chip, eliminating the need for an external magnet. The self-biased circulator provides high isolation between ports in a smaller integrated circuit.
    Type: Application
    Filed: June 3, 2019
    Publication date: May 14, 2020
    Inventors: Yongjie Cui, Xing Gu, Andrew Arthur Ketterson, Cathy Lee, Xing Chen
  • Patent number: 10553782
    Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.
    Type: Grant
    Filed: February 21, 2018
    Date of Patent: February 4, 2020
    Assignee: Qorvo US, Inc.
    Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
  • Publication number: 20200011473
    Abstract: The invention provides a pan-tilt quick locking device, comprising a locking ring and a pan-tilt connecting device capable of generating relative forward and backward sliding with the locking ring along an inner cavity of the locking ring via a slide rail mechanism, and the pan-tilt connecting device locking the pan-tilt connecting device or loosening the pan-tilt connecting device via the relative sliding in the inner cavity of the locking ring. The pan-tilt quick locking device is structurally compact, has a small volume, can operate in a relatively small space, is simple to operate overall, and is convenient to use.
    Type: Application
    Filed: March 13, 2018
    Publication date: January 9, 2020
    Inventors: Li HUANG, Shuqin JIE, Yongyi TU, Xiaojie WANG, Xing GU, Huabin LIU
  • Patent number: 10177247
    Abstract: A precursor cell for a transistor having a foundation structure, a mask structure, and a gallium nitride (GaN) PN structure is provided. The mask structure is provided over the foundation structure to expose a first area of a top surface of the foundation structure. The GaN PN structure resides over the first area and at least a portion of the mask structure and has a continuous crystalline structure with no internal regrowth interfaces. The GaN PN structure comprises a drift region over the first area, a control region laterally adjacent the drift region, and a PN junction formed between the drift region and the control region. Since the drift region and the control region form the PN junction having no internal regrowth interfaces, the GaN PN structure has a continuous crystalline structure with reduced regrowth related defects at the interface of the drift region and the control region.
    Type: Grant
    Filed: August 21, 2017
    Date of Patent: January 8, 2019
    Assignee: Qorvo US, Inc.
    Inventors: Jinqiao Xie, Xing Gu, Edward A. Beam, III
  • Patent number: 10090172
    Abstract: The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a semiconductor precursor including a substrate structure, a buffer structure over the substrate structure, and a channel structure over the buffer structure is provided. The channel structure has a first channel surface and a second channel surface, which is opposite the first channel surface, adjacent to the buffer structure, and has a first polarity. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first channel surface. A heat sink carrier is then provided over the high thermal conductivity substrate. Next, the substrate structure and the buffer structure are removed to provide a thermally enhanced semiconductor device with an exposed surface, which has the first polarity.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: October 2, 2018
    Assignee: Qorvo US, Inc.
    Inventors: Xing Gu, Jinqiao Xie, Edward A. Beam, III, Cathy Lee
  • Publication number: 20180240963
    Abstract: A passive magnetic device (PMD) has a base electrode, a multi-port signal structure (MPSS), and a substrate therebetween. The MPSS has a central plate residing in a second plane and at least two port tabs spaced apart from one another and extending from the central plate. The substrate has a central portion that defines a mesh structure between the base electrode and the central plate of the multi-port signal structure. A plurality of magnetic pillars are provided within the mesh structure, wherein each of the plurality of the magnetic pillars are spaced apart from one another and surrounded by a corresponding portion of the mesh structure. The PMD may provide a magnetically self-biased device that may be used as a radio frequency (RF) circulator, an RF isolator, and the like.
    Type: Application
    Filed: February 21, 2018
    Publication date: August 23, 2018
    Inventors: Andrew Arthur Ketterson, Xing Gu, Yongjie Cui, Xing Chen
  • Patent number: 10037899
    Abstract: The present disclosure relates to a process of forming a high thermal conductivity substrate for an Aluminum/Gallium/Indium (III)-Nitride semiconductor device. According to an exemplary process, a semiconductor precursor including a substrate structure and a buffer structure is provided. The buffer structure is formed over the substrate structure and has a first buffer surface and a second buffer surface. Herein, the second buffer surface is adjacent to the substrate structure and the first buffer surface is opposite the second buffer surface. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first buffer surface. A heat sink carrier is then provided over the high thermal conductivity substrate. The substrate structure is then substantially removed to provide a thermally enhanced precursor for the III-Nitride semiconductor device.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: July 31, 2018
    Assignee: Qorvo US, Inc.
    Inventors: Xing Gu, Jinqiao Xie, Edward A. Beam, III, Cathy Lee
  • Publication number: 20180212045
    Abstract: A precursor cell for a transistor having a foundation structure, a mask structure, and a gallium nitride (GaN) PN structure is provided. The mask structure is provided over the foundation structure to expose a first area of a top surface of the foundation structure. The GaN PN structure resides over the first area and at least a portion of the mask structure and has a continuous crystalline structure with no internal regrowth interfaces. The GaN PN structure comprises a drift region over the first area, a control region laterally adjacent the drift region, and a PN junction formed between the drift region and the control region. Since the drift region and the control region form the PN junction having no internal regrowth interfaces, the GaN PN structure has a continuous crystalline structure with reduced regrowth related defects at the interface of the drift region and the control region.
    Type: Application
    Filed: August 21, 2017
    Publication date: July 26, 2018
    Inventors: Jinqiao Xie, Xing Gu, Edward A. Beam, III
  • Patent number: 9972708
    Abstract: A semiconductor device includes a substrate, a relaxation layer, a channel layer, a polarization compensation layer, and a barrier layer. The relaxation layer is over the substrate and configured to reduce a total strain of the semiconductor device. The channel layer is over the relaxation layer. The polarization compensation layer is between the relaxation layer and the channel layer and configured to reduce a polarization between the relaxation layer and the channel layer. The barrier layer is over the relaxation layer and configured to polarize a junction between the barrier layer and the channel layer to induce a two-dimensional electron gas in the channel layer.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: May 15, 2018
    Assignee: Qorvo US, Inc.
    Inventors: Jinqiao Xie, Edward A. Beam, III, Xing Gu
  • Publication number: 20170278958
    Abstract: A semiconductor device includes a substrate, a relaxation layer, a channel layer, a polarization compensation layer, and a barrier layer. The relaxation layer is over the substrate and configured to reduce a total strain of the semiconductor device. The channel layer is over the relaxation layer. The polarization compensation layer is between the relaxation layer and the channel layer and configured to reduce a polarization between the relaxation layer and the channel layer. The barrier layer is over the relaxation layer and configured to polarize a junction between the barrier layer and the channel layer to induce a two-dimensional electron gas in the channel layer.
    Type: Application
    Filed: March 24, 2017
    Publication date: September 28, 2017
    Inventors: Jinqiao Xie, Edward A. Beam, III, Xing Gu
  • Publication number: 20170133295
    Abstract: The present disclosure relates to a process of forming a semiconductor device with a high thermal conductivity substrate. According to an exemplary process, a semiconductor precursor including a substrate structure, a buffer structure over the substrate structure, and a channel structure over the buffer structure is provided. The channel structure has a first channel surface and a second channel surface, which is opposite the first channel surface, adjacent to the buffer structure, and has a first polarity. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first channel surface. A heat sink carrier is then provided over the high thermal conductivity substrate. Next, the substrate structure and the buffer structure are removed to provide a thermally enhanced semiconductor device with an exposed surface, which has the first polarity.
    Type: Application
    Filed: August 30, 2016
    Publication date: May 11, 2017
    Inventors: Xing Gu, Jinqiao Xie, Edward A. Beam, III, Cathy Lee
  • Publication number: 20170133239
    Abstract: The present disclosure relates to a process of forming a high thermal conductivity substrate for an Aluminum/Gallium/Indium (III)-Nitride semiconductor device. According to an exemplary process, a semiconductor precursor including a substrate structure and a buffer structure is provided. The buffer structure is formed over the substrate structure and has a first buffer surface and a second buffer surface. Herein, the second buffer surface is adjacent to the substrate structure and the first buffer surface is opposite the second buffer surface. Next, a high thermal conductivity substrate with a thermal conductivity greater than 400 W/mK is formed over the first buffer surface. A heat sink carrier is then provided over the high thermal conductivity substrate. The substrate structure is then substantially removed to provide a thermally enhanced precursor for the III-Nitride semiconductor device.
    Type: Application
    Filed: August 30, 2016
    Publication date: May 11, 2017
    Inventors: Xing Gu, Jinqiao Xie, Edward A. Beam, III, Cathy Lee
  • Patent number: 9337278
    Abstract: Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a thermoconductive layer having a thermal conductivity of at least 500 W/(m·K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.
    Type: Grant
    Filed: February 25, 2015
    Date of Patent: May 10, 2016
    Assignee: TriQuint Semiconductor, Inc.
    Inventors: Xing Gu, Jinqiao Xie, Edward A. Beam, III, Deep C. Dumka, Cathy C. Lee
  • Patent number: 9288299
    Abstract: A method for transferring files from a first mobile electronic device to one or more second mobile electronic devices. The method includes detecting a contact with a screen of the first mobile electronic device at an icon in a user interface of the first mobile electronic device, where the icon represents a file to be shared. The method further includes triggering transferring of the file when one of the following actions is detected: a swinging of the first mobile electronic device while contact with the screen is maintained; a flicking gesture to flick the icon toward a sharing area in the user interface; or a dragging of the icon to the sharing area and a releasing of the contact.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: March 15, 2016
    Assignee: DewMobile, Inc.
    Inventors: Xiaodong Wang, Shangpin Chang, Steve Xing Gu
  • Patent number: 8710511
    Abstract: An N-face GaN HEMT device including a semiconductor substrate, a buffer layer including AlN or AlGaN deposited on the substrate, a barrier layer including AlGaN or AlN deposited on the buffer layer and a GaN channel layer deposited on the barrier layer. The channel layer, the barrier layer and the buffer layer create a two-dimensional electron gas (2-DEG) layer at a transition between the channel layer and the barrier layer.
    Type: Grant
    Filed: July 29, 2011
    Date of Patent: April 29, 2014
    Assignee: Northrop Grumman Systems Corporation
    Inventors: Vincent Gambin, Xing Gu, Benjamin Heying
  • Publication number: 20140082610
    Abstract: A method for sharing an application includes generating, by a first mobile electronic device, an invitation to be sent to a second mobile electronic device to install the application in the second mobile electronic device, where the invitation contains a downloading address of a server on which an installation key is stored and a service set identifier (SSID) of the first mobile electronic device. The method further includes sending the invitation.
    Type: Application
    Filed: September 14, 2012
    Publication date: March 20, 2014
    Inventors: Xiaodong WANG, Shangpin Chang, Steve Xing Gu