Abstract: A method and a device for processing a notification bar message are provided. The method includes detecting a target message received by a terminal notification bar. A target interface identifier contained in the target message is acquired, and a type of the target message is determined based on the target interface identifier. The target message is displayed in the notification bar using a display mode according to the type of the target message.

Abstract: The present invention provides a layout of a semiconductor transistor device including a first and a second active area, a first and a second gate, and a metal line. The first active and the second active area are extended along a first direction. The first gate and the second gate are extended along a second direction and crossed the first active area, to define two transistors. The two transistors are electrically connected with each other through a conductive layer. The metal line is disposed on the conductive layer and is electrically connected the two transistors respectively.

Abstract: A frequency jittering control circuit includes a frequency jittering circuit, a feedback compensation circuit, a comparator and a control circuit. The frequency jittering circuit generates a frequency jittering signal. The feedback compensation circuit generates a feedback compensation signal in response to the frequency jittering signal and an output signal. The comparator outputs a comparison output signal according to the feedback compensation signal and an oscillation signal. The control circuit outputs a frequency jittering control signal for switching a main switch in a power supply apparatus, according to the comparison output signal, such that the power supply apparatus correspondingly generates the output signal.

Abstract: A method and a device for processing a notification bar message are provided. The method includes detecting a target message received by a terminal notification bar. A target interface identifier contained in the target message is acquired, and a type of the target message is determined based on the target interface identifier. The target message is displayed in the notification bar using a display mode according to the type of the target message.

Abstract: A semiconductor transistor device includes a substrate having an active area and a trench isolation region surrounding the active area, a gate oxide layer, a gate, a spacer on a sidewall of the gate, a doping region on one side of the gate, an insulating cap layer covering the gate, the spacer and the doping region, and a redistributed contact layer (RCL) on the insulating cap layer. The RCL extends from the active area to the trench isolation region. A contact plug is disposed above the trench isolation region and is electrically connected to the gate or the doping region through the RCL.

Abstract: The present invention provides a layout of a semiconductor transistor device including a first and a second active area, a first and a second gate, and a metal line. The first active and the second active area are extended along a first direction. The first gate and the second gate are extended along a second direction and crossed the first active area, to define two transistors. The two transistors are electrically connected with each other through a conductive layer. The metal line is disposed on the conductive layer and is electrically connected the two transistors respectively.

Abstract: An electronic device comprises a voltage conversion unit, a first load unit, a current adjusting unit, and a control unit. The voltage conversion unit is configured to transfer an input voltage to an output voltage. The current adjusting unit electrically is coupled with the second terminal of the load unit. The current adjusting unit is configured to control a first driving current flowing through the first load unit according to a first current reference signal. The control unit is electrically coupled with the first load unit and the voltage conversion unit. The control unit is configured to generate a first voltage reference signal according to the first current reference signal and generate a first control signal to the voltage conversion unit according to a voltage of the second terminal of the first load unit and the first voltage reference signal.

Abstract: A semiconductor transistor device includes a substrate having an active area and a trench isolation region surrounding the active area, a gate oxide layer, a gate, a spacer on a sidewall of the gate, a doping region on one side of the gate, an insulating cap layer covering the gate, the spacer and the doping region, and a redistributed contact layer (RCL) on the insulating cap layer. The RCL extends from the active area to the trench isolation region. A contact plug is disposed above the trench isolation region and is electrically connected to the gate or the doping region through the RCL.

Abstract: A semiconductor transistor device includes a substrate having an active area and a trench isolation region surrounding the active area, a gate oxide layer, a gate, a spacer on a sidewall of the gate, a doping region on one side of the gate, an insulating cap layer covering the gate, the spacer and the doping region, and a redistributed contact layer (RCL) on the insulating cap layer. The RCL extends from the active area to the trench isolation region. A contact plug is disposed above the trench isolation region and is electrically connected to the gate or the doping region through the RCL.

Abstract: The present invention provides a semiconductor structure, includes a substrate, a dielectric layer disposed on the substrate, a first gate structure and a second gate structure disposed in the dielectric layer, a hard mask disposed in the dielectric layer, where the hard mask covers a sidewall of the first gate structure, and covers the second gate structure, and a contact structure disposed in the dielectric layer. The contact structure at least crosses over the hard mask. The contact structure includes a first contact portion and a second contact portion. The first contact portion contacts the first gate structure directly, the second contact portion contacts the substrate directly, and the hard mask is disposed between the first contact portion and the second contact portion.

Abstract: An electronic device comprises a voltage conversion unit, a first load unit, a current adjusting unit, and a control unit. The voltage conversion unit is configured to transfer an input voltage to an output voltage. The current adjusting unit electrically is coupled with the second terminal of the load unit. The current adjusting unit is configured to control a first driving current flowing through the first load unit according to a first current reference signal. The control unit is electrically coupled with the first load unit and the voltage conversion unit. The control unit is configured to generate a first voltage reference signal according to the first current reference signal and generate a first control signal to the voltage conversion unit according to a voltage of the second terminal of the first load unit and the first voltage reference signal.

Abstract: A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.

Abstract: A voltage conversion device includes a voltage conversion unit and a control unit. The voltage conversion unit includes an input rectifier circuit, a storage capacitor, a storage inductor, a transformer, a switch, and a rectifier component. A first end of the storage inductor is electrically coupled to a first output end of the input rectifier circuit. A first end of the transformer is electrically coupled to a second output end of the input rectifier circuit. A second end of the transformer is electrically coupled to a second end of the storage inductor. The switch is electrically coupled to a third end of the transformer. The control unit is configured to provide a control signal to the switch according to a current passing through the switch and at least one of an output voltage and an output current.

Abstract: A voltage conversion device includes a voltage conversion unit and a control unit. The voltage conversion unit includes an input rectifier circuit, a storage capacitor, a storage inductor, a transformer, a switch, and a rectifier component. A first end of the storage inductor is electrically coupled to a first output end of the input rectifier circuit. A first end of the transformer is electrically coupled to a second output end of the input rectifier circuit. A second end of the transformer is electrically coupled to a second end of the storage inductor. The switch is electrically coupled to a third end of the transformer. The control unit is configured to provide a control signal to the switch according to a current passing through the switch and at least one of an output voltage and an output current.

Abstract: A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring.

Abstract: The present invention provides a method for fabricating a capacitor structure, including the steps of: providing a substrate; forming a first conductive structure and a dielectric structure over the substrate, wherein the first conductive structure is enclosed by the dielectric structure; forming a first trench in the dielectric structure, so that a first surface of the first conductive structure is exposed through the first trench; forming a first capacitor electrode and a capacitor dielectric layer on a bottom and a sidewall of the first trench and on a top surface of the dielectric structure, so that the first capacitor electrode is electrically contacted with the first surface of the first conductive structure; and removing the first capacitor electrode and the capacitor dielectric layer on the top surface of the dielectric structure; forming a second capacitor electrode on a surface of the capacitor dielectric layer. A capacitor structure is also provided.

Abstract: A frequency jittering control circuit includes a frequency jittering circuit, a feedback compensation circuit, a comparator and a control circuit. The frequency jittering circuit generates a frequency jittering signal. The feedback compensation circuit generates a feedback compensation signal in response to the frequency jittering signal and an output signal. The comparator outputs a comparison output signal according to the feedback compensation signal and an oscillation signal. The control circuit outputs a frequency jittering control signal for switching a main switch in a power supply apparatus, according to the comparison output signal, such that the power supply apparatus correspondingly generates the output signal.

Abstract: A method for fabricating semiconductor package structure is disclosed. The method includes: providing a wafer having a front side and a backside; forming a plurality of through-silicon vias (TSVs) in the wafer and a plurality of metal interconnections on the TSVs, in which the metal interconnections are exposed from the front side of the wafer; performing a monitoring step to screen for TSV failures from the backside of the wafer; and bonding the wafer to a substrate.

Abstract: The present disclosure provides a light emitting diode driving circuit, comprising: a power conversion module having an input end, a control end and an output end, wherein the input end receives a voltage, the control end controls the regulation of the duty cycle signal therein according to a received control signal, and the output end outputs a DC voltage having a constant current and a variable voltage value; an overcurrent protection circuit having a switch module and a first resistor connected in series, wherein the overcurrent protection circuit and a LED load connected in series with each other are connected to the power conversion module, so as to turn off the electrical channel between the LED load and the power conversion module when overcurrent occurs; and an overvoltage protection circuit for outputting the control signal when overvoltage occurs and thereby protecting the LED load.

Abstract: A capacitor structure includes a first conductive structure, a dielectric structure, a first capacitor electrode, a capacitor dielectric layer, and a second capacitor electrode. The first conductive structure is disposed over a substrate. The dielectric structure is disposed over the substrate and partially enclosing the first conductive structure. The dielectric structure has a trench. A first surface of the first conductive structure is exposed through the trench of the dielectric structure. The first capacitor electrode is disposed on a bottom and a sidewall of the trench. The first capacitor electrode is electrically contacted with the first surface of the first conductive structure. The capacitor dielectric layer is disposed on a surface of the first capacitor electrode. The second capacitor electrode is disposed on a surface of the capacitor dielectric layer and filled in the trench.