Abstract: A continuous mining and delayed filling mining method for a deep ore body masonry structure is provided, comprising: dividing an ore body into ore blocks along a trend, internally dividing each ore block into stopes with square masonry structures, and reserving a rib pillar between the ore blocks; arranging an ore block conveyor belt gallery and a stope conveyor belt gallery at the lower parts of the ore blocks, arranging ore block crossheading and stope crossheading at the upper parts of the ore blocks, mining the stopes in the sequence from the foot wall to the hanging wall. In accordance with the present disclosure, adverse effects caused by deep high geo-stress and high geo-temperature on mining operation can be effectively overcome. The method has the advantages of low carbon and environmental protection, safety of recovery operation, high mechanization of stope operation, low labor intensity of manual operation and the like.

Abstract: A message encapsulation method and apparatus, and a message decapsulation method and apparatus are provided. The message encapsulation method includes encapsulating a first message according to a preset encapsulation format to obtain a second message, where the first message is obtained by encapsulating a traffic stream, the second message carries stream attribute information, and the stream attribute information is used for indicating a feature attribute of the traffic stream.

Abstract: A solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (B S F) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than ?50° C. In one example, the back surface field comprises AlxGa1-xAs or In0.01AlxGa1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).

Abstract: A panel including at least one solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (BSF) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than ?50° C. In one example, the back surface field comprises AlxGa1-xAs or In0.01AlxGa1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).

Abstract: The present disclosure generally relates to a solar cell device that includes a substrate comprising a front side surface and a backside surface; an epitaxial region overlying the substrate, wherein the epitaxial region comprises a first Bragg reflector disposed below a first solar cell, wherein the first solar cell has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell, and is operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell, and may additionally comprise a second Bragg reflector operable to reflect a third range of radiation wavelengths back into the first solar cell.

Abstract: The present invention discloses a high-voltage ternary positive electrode material for lithium-ion battery and preparation method thereof. The chemical formula of the material is LiNi0.6-xMgxCo0.2-yAlyMn0.2-zTizO2-dFd, wherein 0<x,y,z,d?0.05. The precursor of the positive electrode material is synthesized by gradient co-precipitation method and the positive electrode material is prepared by solid phase method. The content of nickel in the synthesized precursor particles has a gradient distribution from the inside to the outside. The obtained precursor is mixed and grinded evenly with the lithium source and the fluorine source at a certain ratio and put into the tube furnace. The obtained precursor is then pre-sintered in the oxygen-enriched air atmosphere and then heated up to be sintered, to obtain the target product.

Abstract: The present invention discloses a high-voltage ternary positive electrode material for lithium-ion battery and preparation method thereof. The chemical formula of the material is LiNi0.6-xMgxCo0.2-yAlyMn0.2-zTizO2-dFd, wherein 0<x,y,z,d?0.05. The precursor of the positive electrode material is synthesized by gradient co-precipitation method and the positive electrode material is prepared by solid phase method. The content of nickel in the synthesized precursor particles has a gradient distribution from the inside to the outside. The obtained precursor is mixed and grinded evenly with the lithium source and the fluorine source at a certain ratio and put into the tube furnace. The obtained precursor is then pre-sintered in the oxygen-enriched air atmosphere and then heated up to be sintered, to obtain the target product.

Abstract: The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector disposed below the first Bragg reflector, wherein the first solar cell comprises a dilute nitride composition and has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell and the second Bragg reflector is operable to reflect a third range of wavelengths back into the first solar cell, and the first Bragg reflector and the second Bragg reflector are operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell.

Abstract: The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector disposed below the first Bragg reflector, wherein the first solar cell comprises a dilute nitride composition and has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell and the second Bragg reflector is operable to reflect a third range of wavelengths back into the first solar cell, and the first Bragg reflector and the second Bragg reflector are operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell.

Abstract: The present disclosure generally relates to a solar cell device that includes a substrate comprising a front side surface and a backside surface; an epitaxial region overlying the substrate, wherein the epitaxial region comprises a first Bragg reflector disposed below a first solar cell, wherein the first solar cell has a first bandgap, wherein the first Bragg reflector is operable to reflect a first range of radiation wavelengths back into the first solar cell, and is operable to cool the solar cell device by reflecting a second range of radiation wavelengths that are outside the photogeneration wavelength range of the first solar cell or that are weakly absorbed by the first solar cell, and may additionally comprise a second Bragg reflector operable to reflect a third range of radiation wavelengths back into the first solar cell.

Abstract: A highly efficient III-nitride/II-Oxide light emitting device that has a n++-tunneling layer, which comprises at least one material selected from a group consisting of n++-GaN, n++-InGaN, n++-AlGaN, n++-AlGaInN, n++-ZnO, n++-ZnCdO, n++-ZnMgO, n++-ZnMgCdO, that is deposited on top of the p-layer in a LED structure. After that, a top n-layer is deposited above that n++-tunneling layer that may be a n+-layer and comprises at least one material selected from a group consisting of n+-GaN, n+-InGaN, n+-AlGaN, n+-AlGaInN, n+-ZnO, n+-ZnCdO, n+-ZnMgO, n+-ZnMgCdO or a top n-layer may also be a n++-layer and comprises at least one material selected from a group consisting of n++-GaN, n++-InGaN, n++-AlGaN, n++-AlGaInN, n++-ZnO, n++-ZnCdO, n++-ZnMgO, n++-ZnMgCdO so that the top n-layer is made highly conductive and show very rough surface.

Abstract: The present invention relates to a novel catalyst combination and a novel ocess for the synthesis of methanol and methyl formate (MF), and more specifically to the production of methanol and MF by contacting syngas under relatively mild conditions in a slurry phase with the novel catalyst combination comprising unreduced copper chromite prepared using specifical method, alkali alcoholates, a nonionics and a non-polar solvent. The nonionics, for example, C.sub.8 H.sub.17 --(C.sub.6 H.sub.4)--O--(C.sub.2 H.sub.4 O).sub.n H (where n is between 4 and 60) is used in the amount that is at least 5 vol. % of the slurry (liquid reaction medium). And the non-polar solvent having a dielectricity constant between 2 and 3 at 20.degree. C. is used in the amount that is at least 50 vol. % of the slurry. The present invention allows the synthesis of methanol and MF to occur in the temperature range of approximately 100-150.degree. C., and the pressure range of 3-8 MPa.