Abstract: A novel linearization apparatus for reducing power amplifier distortion does not require delay lines. The apparatus includes a power amplifier and an error generator. The signals provided by the error generator (error signal) and the power amplifier are combined to subtract out the distortion introduced by the power amplifier. The error generator includes two auxiliary amplifiers, wherein one of the auxiliary amplifiers is operated in it saturated region and the other is operated in its non-saturated region. The power amplifier and the two auxiliary amplifiers have the same distortion characteristics and receive the same input signal. The auxiliary amplifier operating in its saturated region introduces distortion and the auxiliary amplifier operating in its non-saturated region does not introduce distortion. The two signals provided by the auxiliary amplifiers are combined to produce an error signal having a distortion component that is an approximate replica of the power amplifier distortion.

Abstract: The present invention provides a chemical vapor deposition apparatus for a semiconductor film, containing a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, where part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof. The present invention also provides a chemical vapor deposition method using the apparatus.

Abstract: This invention relates to seedlings which demonstrate improved phenotypic characteristics when grown at low light levels. More specifically, the present invention relates to producing plants which contain a nucleic acid sequence coding for the N282 protein as well as the wildtype COP1 gene.

Abstract: This invention relates to seedlings which demonstrate better emergence characteristics when grown in darkness and improved seedling growth when grown under low-light levels. More specifically, the present invention relates to producing plant cells and whole plants which contain a nucleic acid sequence coding for the Coil domain as well as the sequence coding for the wildtype COP1 gene. The plants of this invention display unopened, compact leaves during seedling emergence in the darkness and reduced etiolation of seedings grown in low-levels after emergence. The invention further relates to plant breeding methods which enable the transfer of these desirable traits to wildtype plants.

Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.

Abstract: This invention relates to seedlings which demonstrate better emergence characteristics when grown in darkness and improved seedling growth when grown under low-light levels. More specifically, the present invention relates to producing plant cells and whole plants which contain a nucleic acid sequence coding for the Coil domain as well as the sequence coding for the wildtype COP1 gene. The plants of this invention display unopened, compact leaves during seedling emergence in the darkness and reduced etiolation of seedlings grown in low-levels after emergence. The invention further relates to plant breeding methods which enable the transfer of these desirable traits to wildtype plants.

Abstract: There is disclosed a chemical vapor deposition apparatus of semi-conductor film comprising a horizontal type reaction tube equipped with a susceptor to carry a substrate, a heater to heat the substrate, an ingredient gas introduction zone arranged in a way that feeding direction to the reaction tube of the ingredient gas becomes substantially parallel to the substrate, and a reaction gas exhaust division, and further having a pressurized gas introduction zone on the wall of the reaction tube facing the substrate, wherein the structure of at least one part of the pressurized gas introduction zone at an upstream side of an ingredient gas passageway is such that the pressurized gas supplied from said part of the pressurized gas introduction zone is fed in an oblique down or a horizontal direction oriented to a downstream side of the ingredient gas passageway. Also, disclosed herein a chemical vapor deposition method using the apparatus.

Abstract: There is disclosed a chemical vapor deposition apparatus for a semiconductor film, which comprises a horizontal tubular reactor, a susceptor, a heater, a feed gas introduction portion and a reaction gas exhaust portion, wherein the constitution of the apparatus is such that part of the tubular reactor walls inclines downward from the upstream side of the feed gas passageway towards the downstream side thereof so as to change the direction of the gas stream to an oblique downward direction or is such that the spacing between the susceptor and the tubular reactor wall in opposition thereto is made smaller than the vertical spacing in the tubular reactor wall from a gas feed port in the feed gas introduction portion to the upstream side end of the feed gas passageway for the susceptor. Also disclosed herein a chemical vapor deposition method using the apparatus.

Abstract: There are disclosed an apparatus and a method for chemical vapor deposition for a semiconductor film and the like, wherein a feed gas is supplied in a horizontal tubular reactor in the direction parallel to a substrate; a forcing gas is supplied therein in the direction perpendicular to the substrate; and the flow rate per unit area of the forcing gas which is supplied from a forcing gas introduction portion into the reactor is made lower in the central portion of the forcing gas introduction portion than in the peripheral portion thereof, or lower in the middle of a feed gas passageway than at both the end portions of the passageway.