Abstract: A process for producing a miniaturized SMD diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using Charge-Coupled Device (CCD) image registration technology to perform chip bonding; the beneficial advantages brought from the process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized SMD diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized SMD diode package possesses excellent diode characteristics without distortion or defect.

Abstract: A miniaturized SMD diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using Charge-Coupled Device (CCD) image registration technology to perform chip bonding; the beneficial advantages brought from a process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized SMD diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized SMD diode package possesses excellent diode characteristics without distortion or defect.

Abstract: A surface-mount device (SMD) uses no conventional lead frame and contains a multi-function die module formed from either a single die or two or more dies electrically connected in series, in parallel, or in any combination of series and parallel, to provide such a SMD having one or more different functions including wave filtration, rectification, surge protection, sensing, current limiting, voltage regulation or prevention from voltage backflow, as compared to the prior art, the SMD disclosed is formed from fewer components, is simpler to manufacture and more effectively reduce layout wire length and noise.

Abstract: A surface-mount device (SMD) uses no conventional lead frame and contains a multi-function die module formed from either a single die or two or more dies electrically connected in series, in parallel, or in any combination of series and parallel, to provide such a SMD having one or more different functions including wave filtration, rectification, surge protection, sensing, current limiting, voltage regulation or prevention from voltage backflow, as compared to the prior art, the SMD disclosed is formed from fewer components, is simpler to manufacture and more effectively reduce layout wire length and noise.

Abstract: A process for producing a miniaturized SMD diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using Charge-Coupled Device (CCD) image registration technology to perform chip bonding; the beneficial advantages brought from the process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized SMD diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized SMD diode package possesses excellent diode characteristics without distortion or defect.

Abstract: A novel chip scale diode package due to no containing outer lead pins is miniaturized like a chip scale appearance to promote dimensional accuracy so that the diode package is so suitably produced by automation equipment to get automated mass production; the produced diode package may contain one or more diode chips to increase versatile functions more useful in applications, such as produced as a SMT diode package or an array-type SMT diode, and the present diode package due to made of no lead-containing material conforms to requirements for environmental protection.

Abstract: A miniaturized SMD diode package involves using a diode chip whose bottom surface has a positive electrode and a negative electrode, using a circuit board instead of a conventional lead frame during packaging, and using Charge-Coupled Device (CCD) image registration technology to perform chip bonding; the beneficial advantages brought from a process for producing the same including to simplify producing process and reduce manufacturing cost, to improve accuracy and precision of producing the miniaturized SMD diode package due to using a circuit board instead of conventionally used lead frame, and to ensure the produced miniaturized SMD diode package possesses excellent diode characteristics without distortion or defect.

Abstract: A novel chip scale diode package due to no containing outer lead pins is miniaturized like a chip scale appearance to promote dimensional accuracy so that the diode package is so suitably produced by automation equipment to get automated mass production; the produced diode package may contain one or more diode chips to increase versatile functions more useful in applications, such as produced as a SMT diode package or an array-type SMT diode, and the present diode package due to made of no lead-containing material conforms to requirements for environmental protection.

Abstract: A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.

Abstract: A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm.

Abstract: A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.

Abstract: A process for producing zinc oxide varistors is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintering material through two independent procedures, so that the doped zinc oxide and the high-impedance sintering material are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess one or more of varistor properties, thermistor properties, capacitor properties, inductor properties, piezoelectricity and magnetism.