Abstract: Processes for refurbishing a spent sputtering target with a non-circular shape are disclosed. In one form, the processes include the steps of receiving one or more spent sputtering targets, inspecting and weighing the spent sputtering targets, removing any contaminants or other surface impurities from the spent sputtering target surfaces, preparing a hot press die with spacers, disposing the spent sputtering targets in the hot press die, the spacers used to center the spent sputtering targets therein, loading fresh metal refilling powder into the die to account for depleted regions of the spent sputtering targets to produce a powder-filled sputtering target, and applying sufficient heat and force to the filled sputtering target to produce a refurbished sputtering target with homogeneous composition and sufficient adhesion strength.

Abstract: Methods for making a high purity (>99.99%) and low oxygen (<40 ppm) sputtering target containing Co, CoFe, CoNi, CoMn, CoFeX (X=B, C, Al), Fe, FeNi, or Ni alloys with a column microstructure framed by boron intermetallics are disclosed. The sputtering target is made by directional casting a molten mixture of the metal alloy, annealing to remove residual stresses, slicing, and optional annealing and finishing to obtain the sputtering target.

Abstract: Methods for finishing a sputtering target to reduce particulation and to reduce burn-in time are disclosed. The surface of the unfinished sputtering target is blasted with beads to remove machining-induced defects. Additional post-processing steps include dust blowing-off, surface wiping, dry ice blasting, removing moisture using hot air gun, and annealing, resulting in a homogeneous, ultra-clean, residual-stress-free, hydrocarbon chemicals-free surface.

Abstract: Methods for making a high purity (>99.99%) and low oxygen (<40 ppm) sputtering target containing Co, CoFe, CoNi, CoMn, CoFeX (X=B, C, Al), Fe, FeNi, or Ni alloys with a column microstructure framed by boron intermetallics are disclosed. The sputtering target is made by directional casting a molten mixture of the metal alloy, annealing to remove residual stresses, slicing, and optional annealing and finishing to obtain the sputtering target.

Abstract: Methods for making a high purity (>99.99%) and low oxygen (<40 ppm) sputtering target containing Co, CoFe, CoNi, CoMn, CoFeX (X?B, C, Al), Fe, FeNi, or Ni alloys with a column microstructure framed by boron intermetallics are disclosed. The sputtering target is made by directional casting a molten mixture of the metal alloy, annealing to remove residual stresses, slicing, and optional annealing and finishing to obtain the sputtering target.

Abstract: Processes for refurbishing a spent sputtering target with a non-circular shape are disclosed. In one form, the processes include the steps of receiving one or more spent sputtering targets, inspecting and weighing the spent sputtering targets, removing any contaminants or other surface impurities from the spent sputtering target surfaces, preparing a hot press die with spacers, disposing the spent sputtering targets in the hot press die, the spacers used to center the spent sputtering targets therein, loading fresh metal refilling powder into the die to account for depleted regions of the spent sputtering targets to produce a powder-filled sputtering target, and applying sufficient heat and force to the filled sputtering target to produce a refurbished sputtering target with homogeneous composition and sufficient adhesion strength.

Abstract: Methods for finishing a sputtering target to reduce particulation and to reduce burn-in time are disclosed. The surface of the unfinished sputtering target is blasted with beads to remove machining-induced defects. Additional post-processing steps include dust blowing-off, surface wiping, dry ice blasting, removing moisture using hot air gun, and annealing, resulting in a homogeneous, ultra-clean, residual-stress-free, hydrocarbon chemicals-free surface.

Abstract: Methods for making a high purity (>99.99%) and low oxygen (<40 ppm) sputtering target containing Co, CoFe, CoNi, CoMn, CoFeX (X?B, C, Al), Fe, FeNi, or Ni alloys with a column microstructure framed by boron intermetallics are disclosed. The sputtering target is made by directional casting a molten mixture of the metal alloy, annealing to remove residual stresses, slicing, and optional annealing and finishing to obtain the sputtering target.

Abstract: In the electro-dissolution process for hard alloy recovery, the longitudinal acid flow is replaced by a transversal flow to progress the running quality of electrolyte; a supersonic wave device is set for increasing the reaction speed and preventing the oxidation bed from forming; a supersonic wave cleaner is used for cleaning the impurity ions; grinding process is improved for maintaining the original shape of hard particles (WC, VC, TiC, etc); magnetic separators are used for separating the residual metal binder (Co, Ni, Cr, etc) out of the powders.

Abstract: An enhanced sputtering target is provided for use in a magnetron sputtering system. The sputtering target includes an active surface from which target material is sputtered and a back surface opposite the active surface. At least one magnet is embedded in the back surface of the target and is oriented to increase the magnetic field passing through the active surface of the target.

Abstract: The invention relates generally to a system and method for improved cleaning of workpieces and workpiece cleaning tools. More specifically, the invention provides systems and methods for cleaning workpieces and sponges by manipulating the surface charge of one or more sponges by exposing them to various cleaning fluids. In one embodiment, sponges such as PVA sponges, having either positive, negative or neutral charges, are used to clean surfaces of workpieces such as semiconductor wafers. While cleaning a workpiece, a sponge may be exposed to a workpiece cleaning fluid, which may or may not alter the surface charge of the sponge. After cleaning the workpiece, the sponge may be exposed to a sponge cleaning fluid, which may or may not alter the surface charge of the sponge.

Abstract: The invention relates generally to a system and method for improved cleaning of workpieces and workpiece cleaning tools. More specifically, the invention provides systems and methods for cleaning workpieces and sponges by manipulating the surface charge of one or more sponges by exposing them to various cleaning fluids. In one embodiment, sponges such as PVA sponges, having either positive, negative or neutral charges, are used to clean surfaces of workpieces such as semiconductor wafers. While cleaning a workpiece, a sponge may be exposed to a workpiece cleaning fluid, which may or may not alter the surface charge of the sponge. After cleaning the workpiece, the sponge may be exposed to a sponge cleaning fluid, which may or may not alter the surface charge of the sponge.

Abstract: The present invention relates generally to a polyvinyl acetate (PVA) sponge. More specifically, a PVA sponge according to the present invention has certain improved physical characteristics, such as uniform pore size, a microscopically rough surface, and/or a neutral surface charge. Certain characteristics may be achieved by a variety of methods in which pore-forming chemicals are dissolved into a PVA solution, so that no solid residues remain in the pores of a PVA sponge after production. Neutral surface charge of a PVA sponge may be achieved by adding a charge modifying agent during the sponge making process.

Abstract: A magnetic recording media having a CrMo underlayer provides improved performance characteristics. In one embodiment, the recording media comprises a rigid substrate and an underlayer disposed over the substrate, in which the underlayer comprises CrMo. Preferably, the Mo crystals in the CrMo underlayer are at least about 140 Å in the film growth direction for the 002 crystal plane. Advantageously, recording media with such a 002 crystal size, when used in conjunction with a magnetic layer, such as CoCrTaPtNi, exhibits significantly higher parametric qualities than underlayers using other materials. Typically, Mo in the range between about 7% and 16% in the CrMo alloy, more preferably between about 9% and 11%, will provide the recited 002 crystal size.

Abstract: The present invention provides magnetic recording media comprising a rigid substrate and an underlayer disposed over the substrate, in which the underlayer comprises CrTiCu or CrTiV. A magnetic layer is disposed over this underlayer, and is also disposed over a texturized surface. Generally, the substrate comprises aluminum, and an NiP layer is disposed over the substrate and below the underlayer. The texture will typically be imposed on this NiP layer. Advantageously, the CrTiCu or CrTiV underlayer has been found to compensate for texture-induced anisotropy, limiting a ratio of circumferential coercivity to radial coercivity within the range between about 0.8 and 1.25.

Abstract: A magnetic recording media having a CrMo underlayer provides improved performance characteristics. In one embodiment, the recording media comprises a rigid substrate and an underlayer disposed over the substrate, in which the underlayer comprises CrMo. Preferably, the Mo crystals in the CrMo underlayer are at least about 140 Å in the film growth direction for the 002 crystal plane. Advantageously, recording media with such a 002 crystal size, when used in conjunction with a magnetic layer, such as CoCrTaPtNi, exhibits significantly higher parametric qualities than underlayers using other materials. Typically, Mo in the range between about 7% and 16% in the CrMo alloy, more preferably between about 9% and 11%, will provide the recited 002 crystal size.

Abstract: A metal thin film magnetic recording medium comprising an underlying non-magnetic layer and a magnetic layer comprising a Co-alloy having a uni-axial magnetocrystalline anisotropy formed in this order by lamination on the surface of a non-magnetic substrate. On the substrate, are formed a seed layer comprising an oxygen-containing non-magnetic amorphous metal or a seed layer comprising a non-magnetic amorphous metal having an oxygen-containing layer (not illustrated) on the surface, and an underlying non-magnetic layer is laminated on the seed layer. Further, a seed layer comprising an amorphous Cr- or V-alloy is formed on the substrate, and an underlying non-magnetic layer is laminated on the seed layer.

Abstract: The present invention provides a metal thin film magnetic recording medium in which an underlying Cr layer, a magnetic recording layer and a protection layer are laminated in this order on a non-magnetic medium substrate. The medium substrate comprises an NiPX layer laminated in this order on a non-metallic base plate such as a glass base plate or a carbon base plate. X is one or mope elements belonging to a group of 4, 5 and 6 in a periodic table, and the content X is less than 20 at % in total. A heat accumulating non-magnetic layer having excellent heat conductivity may be formed on the non-metallic base plate and laminated between the NiPX layer thereon.