Patents by Inventor Xingchen GE

Xingchen GE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240112310
    Abstract: Disclosed are a distributed quantum imaging method, apparatus and system, and a computer-readable storage medium. The distributed quantum imaging system comprises a plurality of laser devices that are placed at different spatial positions, a plurality of spatial light modulators, a detector and an imaging processor, wherein each laser device uniquely corresponds to one spatial light modulator.
    Type: Application
    Filed: January 28, 2022
    Publication date: April 4, 2024
    Inventors: Xingchen CUI, Hongzhi SHI, Yuan GE, Yingjie ZHANG
  • Patent number: 11264421
    Abstract: The present disclosure discloses a method for manufacturing a backside-illuminated CMOS image sensor structure, the method comprises: providing a silicon substrate which has been subjected to a frontside processing and a back thinning; forming grid-shaped deep trenchs on the back of the silicon substrate; forming an insulating layer on the inner wall surface of the deep trenchs to form a grid-shaped deep trenchs isolation structure; forming a diffusion barrier layer on the surface of the insulating layer; filling metal in the deep trenchs to form a grid-shaped composite structure in which the Metal grid is combined with the deep trenchs isolation structure.
    Type: Grant
    Filed: August 29, 2018
    Date of Patent: March 1, 2022
    Assignee: SHANGHAI IC R&D CENTER CO., LTD.
    Inventor: Xingchen Ge
  • Publication number: 20200251510
    Abstract: The present disclosure discloses a method for manufacturing a backside-illuminated CMOS image sensor structure, the method comprises: providing a silicon substrate which has been subjected to a frontside processing and a back thinning; forming grid-shaped deep trenchs on the back of the silicon substrate; forming an insulating layer on the inner wall surface of the deep trenchs to form a grid-shaped deep trenchs isolation structure; forming a diffusion barrier layer on the surface of the insulating layer; filling metal in the deep trenchs to form a grid-shaped composite structure in which the Metal grid is combined with the deep trenchs isolation structure.
    Type: Application
    Filed: August 29, 2018
    Publication date: August 6, 2020
    Inventor: Xingchen GE