Abstract: Techniques for reducing peak on-state voltage of a semiconductor device fabricated in a wafer. A substrate layer is provided. An isolation structure is provided to laterally isolate the semiconductor device from other semiconductor devices in the wafer. A tub structure is formed in the substrate layer. A base layer is provided such that the base layer is disposed under the substrate layer. The base layer includes an anode having an associated active region that includes a drift region in the substrate layer. The tub structure is disposed inside the active region such that presence of the tub structure reduces a thickness of the drift region.

Abstract: Techniques for plating a wafer with electrical glass during fabrication of semiconductor devices in the wafer. An electrical-conductivity network is formed in the wafer by doping a surface region of an isolation structure of the wafer. The isolation structure laterally isolates the semiconductor devices from one another in the wafer. After forming the electrical-conductivity network in the wafer, a glass deposition of a respective plating is formed atop each of one or more plating regions of the wafer.

Abstract: A transient voltage suppression (TVS) device and method of formation. A TVS device may include a first layer, disposed on a first surface of a substrate, comprising a first P+ layer; a second layer, disposed on a second surface of the substrate, opposite the first surface, comprising a second P+ layer; a third layer, disposed between the first P+ layer and the second P+ layer, comprising an N? layer; and an isolation diffusion region, comprising a P structure, connected to the second P+ layer, and extending along a perimeter of the N? layer.

Abstract: A transient voltage suppression (TVS) device. The TVS device may include a substrate, comprising a polarity of a first type. The TVS device may further include a first dopant layer, disposed on a first surface of the substrate, the first layer comprising a polarity of a second type, wherein the first dopant layer forms a P/N junction with the substrate. The TVS device may include a first buffer layer, disposed on the first dopant layer, and a first outer contact layer, disposed on the first buffer layer.