Patents by Inventor Xingen WU

Xingen WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210343904
    Abstract: A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel.
    Type: Application
    Filed: August 14, 2019
    Publication date: November 4, 2021
    Inventors: Yingce LIU, Zhao LIU, Junxian LI, Zhendong WEI, Xingen WU
  • Publication number: 20210336089
    Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.
    Type: Application
    Filed: July 30, 2019
    Publication date: October 28, 2021
    Inventors: Xingen WU, Yingce LIU, Junxian LI, Zhendong WEI
  • Publication number: 20210091262
    Abstract: A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.
    Type: Application
    Filed: July 16, 2019
    Publication date: March 25, 2021
    Applicant: XIAMEN CHANGELIGHT CO.,LTD.
    Inventors: Xingen WU, Junxian LI, Yingce LIU, Zhendong WEI, Hongyi ZHOU
  • Publication number: 20200251632
    Abstract: A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.
    Type: Application
    Filed: July 31, 2018
    Publication date: August 6, 2020
    Inventors: Xingen WU, Yingce LIU, Junxian LI, Qilong WU
  • Publication number: 20200020830
    Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
    Type: Application
    Filed: October 7, 2017
    Publication date: January 16, 2020
    Inventors: Yingce LIU, Bin SONG, Junxian LI, Qilong WU, Yang WANG, Kaixuan CHEN, Zhendong WEI, Xingen WU, Hongyi ZHOU, Lihe CAI, Xinmao HUANG, Zhiwei LIN, Yongtong LI, Qimeng LYU, Hexun CAI, Gengcheng LI