Patents by Inventor Xingen WU
Xingen WU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11621380Abstract: A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.Type: GrantFiled: July 31, 2018Date of Patent: April 4, 2023Assignee: Xiamen Changelight Co., Ltd.Inventors: Xingen Wu, Yingce Liu, Junxian Li, Qilong Wu
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Patent number: 11621375Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).Type: GrantFiled: October 7, 2017Date of Patent: April 4, 2023Assignee: Xiamen Changelight Co., Ltd.Inventors: Yingce Liu, Bin Song, Junxian Li, Qilong Wu, Yang Wang, Kaixuan Chen, Zhendong Wei, Xingen Wu, Hongyi Zhou, Lihe Cai, Xinmao Huang, Zhiwei Lin, Yongtong Li, Qimeng Lyu, Hexun Cai, Gengcheng Li
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Patent number: 11616171Abstract: A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel.Type: GrantFiled: August 14, 2019Date of Patent: March 28, 2023Assignee: Xiamen Changelight Co., Ltd.Inventors: Yingce Liu, Zhao Liu, Junxian Li, Zhendong Wei, Xingen Wu
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Patent number: 11527679Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.Type: GrantFiled: July 30, 2019Date of Patent: December 13, 2022Assignee: Xiamen Changelight Co., Ltd.Inventors: Xingen Wu, Yingce Liu, Junxian Li, Zhendong Wei
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Publication number: 20220393077Abstract: A flip light emitting chip and a manufacturing method thereof are provided. The flip light emitting chip includes a substrate and an extended stacking layer formed on the substrate. The extended stacking layer includes a first semiconductor layer formed on the substrate, an active region formed on the first semiconductor layer, and a second semiconductor layer formed on the active region. The flip light emitting chip further includes a reflective layer formed on the second semiconductor layer, a barrier layer formed on the second semiconductor layer and covering the reflective layer, a bonding layer formed on the barrier layer and an insulating layer formed on the bonding layer such that the bonding layer is retained between the barrier layer and the insulating layer for enhancing a binding force between the barrier layer and the insulating layer.Type: ApplicationFiled: August 11, 2022Publication date: December 8, 2022Applicant: Xiamen Changelight Co. Ltd.Inventors: Yingce LIU, Yan LI, Zhao LIU, Xingen WU
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Patent number: 11469349Abstract: A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.Type: GrantFiled: July 16, 2019Date of Patent: October 11, 2022Assignee: Xiamen Changelight Co., Ltd.Inventors: Xingen Wu, Junxian Li, Yingce Liu, Zhendong Wei, Hongyi Zhou
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Publication number: 20220302352Abstract: A mini LED chip and a manufacturing method thereof are provided. The mini LED chip includes a growth substrate and a light-emitting epitaxial layer including a first type semiconductor layer, a luminous layer, and a second type semiconductor layer. The second type semiconductor layer and the luminous layer include an electrode contact hollow part that exposes the first type semiconductor layer. Further, the mini LED chip includes a transparent conductive layer disposed on a side of the second type semiconductor layer facing away from the growth substrate, an extended electrode disposed on a side of the transparent conductive layer facing away from the growth substrate, an insulating and isolating reflection layer covering the electrode contact hollow part and an exposed surface of the transparent conductive layer and the extended electrode facing away from the growth substrate, and a first bonding electrode and a second bonding electrode.Type: ApplicationFiled: June 3, 2022Publication date: September 22, 2022Applicant: XIAMEN CHANGELIGHT CO., LTD.Inventors: Yingce LIU, Junxian LI, Zhao LIU, Xuan HUANG, Xingen WU
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Publication number: 20210343904Abstract: A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel.Type: ApplicationFiled: August 14, 2019Publication date: November 4, 2021Inventors: Yingce LIU, Zhao LIU, Junxian LI, Zhendong WEI, Xingen WU
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Publication number: 20210336089Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.Type: ApplicationFiled: July 30, 2019Publication date: October 28, 2021Inventors: Xingen WU, Yingce LIU, Junxian LI, Zhendong WEI
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Publication number: 20210091262Abstract: A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.Type: ApplicationFiled: July 16, 2019Publication date: March 25, 2021Applicant: XIAMEN CHANGELIGHT CO.,LTD.Inventors: Xingen WU, Junxian LI, Yingce LIU, Zhendong WEI, Hongyi ZHOU
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Publication number: 20200251632Abstract: A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.Type: ApplicationFiled: July 31, 2018Publication date: August 6, 2020Inventors: Xingen WU, Yingce LIU, Junxian LI, Qilong WU
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Publication number: 20200020830Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).Type: ApplicationFiled: October 7, 2017Publication date: January 16, 2020Inventors: Yingce LIU, Bin SONG, Junxian LI, Qilong WU, Yang WANG, Kaixuan CHEN, Zhendong WEI, Xingen WU, Hongyi ZHOU, Lihe CAI, Xinmao HUANG, Zhiwei LIN, Yongtong LI, Qimeng LYU, Hexun CAI, Gengcheng LI