Abstract: Disclosed is a broadband achromatic metasurface waveplate including a device that includes a plurality of nanostructures physically coupled to a substrate and formed at least partially of a dielectric material having a first refractive index and an anti-reflective film applied to a surface of the device. The anti-reflective film may include a material having a second refractive index that is less than the first refractive index. The device and the anti-reflective film may modify incident light with wavelengths extending over a bandwidth of at least 100 nanometers to impart a substantially uniform phase retardation across the wavelengths and a transmittance of at least 90 percent across the wavelengths.

Abstract: An optical metasurface film includes a flexible polymeric film having a first major surface, a patterned polymer layer having a first surface proximate to the first major surface of the flexible polymeric film and having a second nanostructured surface opposite the first surface, and a refractive index contrast layer adjacent to the nanostructured surface of the patterned polymer layer forming a nanostructured bilayer with a nanostructured interface. The nanostructured bilayer acts locally on amplitude, phase, or polarization of light, or a combination thereof and imparts a light phase shift that varies as a function of position of the nano structured bilayer on the flexible polymeric film. The light phase shift of the nanostructured bilayer defines a predetermined operative phase profile of the optical metasurface film.

Abstract: A device for switchably influencing electromagnetic radiation includes a phase change material and an optically responsive structure. The phase change material is switchable between at least a first state and a second state. The first state and the second state have different electrical and/or magnetic properties. The optically responsive structure is in contact with the phase change material and has at least a first nanostructure and a second nanostructure. The first nanostructure is being different from the second nanostructure. The first nanostructure is optically responsive at a predetermined electromagnetic wavelength when the phase change material is in its first state, and non-responsive at the predetermined wavelength when the phase change material is in its second state.

Abstract: A device with switchable, chiral optical characteristics, has a first chiral arrangement with a first arrangement layer with at least one first nanostructure and a second arrangement layer with at least one second nanostructure. The first nanostructure and the second nanostructure are arranged relative to one another such that the chiral arrangement is chiral. A switching material with switchable dielectric characteristics is arranged between the first arrangement layer and the second arrangement layer.

Abstract: A device for switchably influencing electromagnetic radiation includes a phase change material and an optically responsive structure. The phase change material is switchable between at least a first state and a second state. The first state and the second state have different electrical and/or magnetic properties. The optically responsive structure is in contact with the phase change material and has at least a first nanostructure and a second nanostructure. The first nanostructure is being different from the second nanostructure. The first nanostructure is optically responsive at a predetermined electromagnetic wavelength when the phase change material is in its first state, and non-responsive at the predetermined wavelength when the phase change material is in its second state.

Abstract: A device with switchable, chiral optical characteristics, has a first chiral arrangement with a first arrangement layer with at least one first nanostructure and a second arrangement layer with at least one second nanostructure. The first nanostructure and the second nanostructure are arranged relative to one another such that the chiral arrangement is chiral. A switching material with switchable dielectric characteristics is arranged between the first arrangement layer and the second arrangement layer.