Patents by Inventor Xingjun LI

Xingjun LI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device and method for manufacturing the same
    Patent number: 12199017
    Abstract: A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer and includes a first pattern and a second pattern which are spaced apart from each other. The source pad is immediately above the first metal layer, the second metal layer, and the first pattern of the third metal layer and is electrically coupled with the nitride-based transistor. The drain pad is immediately above the first metal layer, the second metal layer, and the second pattern of the third metal layer and is electrically coupled with the nitride-based transistor.
    Type: Grant
    Filed: November 12, 2021
    Date of Patent: January 14, 2025
    Assignee: INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
    Inventors: Xiaoyan Zhang, Jiawei Wen, Yulong Zhang, Jinhan Zhang, Ronghui Hao, Xingjun Li, King Yuen Wong
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20240063095
    Abstract: A semiconductor device includes a nitride-based transistor, a first metal layer, a second metal layer, a third metal layer, a source pad, and a drain pad. The first metal layer is disposed over the nitride-based transistor. The second metal layer is disposed over the first metal layer. The third metal layer is disposed over the second metal layer and includes a first pattern and a second pattern which are spaced apart from each other. The source pad is immediately above the first metal layer, the second metal layer, and the first pattern of the third metal layer and is electrically coupled with the nitride-based transistor. The drain pad is immediately above the first metal layer, the second metal layer, and the second pattern of the third metal layer and is electrically coupled with the nitride-based transistor.
    Type: Application
    Filed: November 12, 2021
    Publication date: February 22, 2024
    Inventors: Xiaoyan ZHANG, Jiawei WEN, Yulong ZHANG, Jinhan ZHANG, Ronghui HAO, Xingjun LI, King Yuen WONG