Abstract: A method for growing halide perovskite nanocrystals through in-situ chemical vapor deposition comprises the steps: grinding and mixing lead halide powder and cesium halide powder to obtain a solid-phase precursor; mixing the solid-phase precursor with the mesoporous molecular sieve; heating the mixed powder in a nitrogen atmosphere, such that the solid-phase precursor is sublimated into a gaseous state and is adsorbed into the pore channels of the mesoporous molecular sieve; and lowering the temperature, such that the gas-phase lead, the cesium, and the halogen atom react in-situ in the pore channels of the molecular sieve to form the halide perovskite nanocrystal. The fluorescence quantum yield of the CsPbBr3 nanocrystal is improved to 90% or higher by passivating its surface defects with Cs4PbBr6, thereby enhancing its luminescence properties. Meanwhile, halide perovskite nanocrystals with different luminescence colors are obtained by adjusting the types of halogen in lead halide and cesium halide.

Abstract: The present application provides a single photon source device, a preparation method thereof, and applications of the same. The single photon source device includes a first electrode layer, a first carrier transport layer, a quantum dot light-emitting layer, a second carrier transport layer and a second electrode layer which are stacked in sequence, and the quantum dot light-emitting layer comprises an insulating material and quantum dots dispersed in the insulating material, neighbor distance of at least a part of the quantum dots is greater than or equal to the central wavelength of the luminescent spectrum of quantum dots.

Abstract: The present application provides a single photon source device, a preparation method thereof, and applications of the same. The single photon source device includes a first electrode layer, a first carrier transport layer, a quantum dot light-emitting layer, a second carrier transport layer and a second electrode layer which are stacked in sequence, and the quantum dot light-emitting layer comprises an insulating material and quantum dots dispersed in the insulating material, neighbor distance of at least a part of the quantum dots is greater than or equal to the central wavelength of the luminescent spectrum of quantum dots.