Abstract: A drive circuit includes a first drive unit, a second drive unit, and a third drive unit. The first drive unit is configured to: when receiving a first control signal, output a first drive charging current to a gate end, so that a voltage at the gate end reaches a first threshold. The second drive unit is configured to output a second drive charging current to the gate end, so that the voltage at the gate end reaches a second threshold from the first threshold. The third drive unit is configured to: after the voltage at the gate end reaches the second threshold, output a third drive charging current to the gate end. The third drive charging current is greater than the first drive charging current and the second drive charging current. In this way, a turn-on loss may be reduced while meeting an electromagnetic interference requirement of the power device.

Abstract: A conversion circuit and an adapter that resolve a voltage drop problem of a power supply of a driver in an ACF circuit. The conversion circuit includes an active clamp flyback circuit, a drive circuit, and a replenishment power transistor. The active clamp flyback circuit is configured to perform power conversion. The drive circuit is configured to output a drive signal and a reference voltage. The drive signal is used to drive the active clamp flyback circuit. A first terminal of the replenishment power transistor is coupled to an input terminal of the active clamp flyback circuit, a second terminal of the replenishment power transistor is coupled to a power supply terminal of the drive circuit, and a gate of the replenishment power transistor is configured to receive the reference voltage.

Abstract: A conversion circuit and an adapter that resolve a voltage drop problem of a power supply of a driver in an ACF circuit. The conversion circuit includes an active clamp flyback circuit, a drive circuit, and a replenishment power transistor. The active clamp flyback circuit is configured to perform power conversion. The drive circuit is configured to output a drive signal and a reference voltage. The drive signal is used to drive the active clamp flyback circuit. A first terminal of the replenishment power transistor is coupled to an input terminal of the active clamp flyback circuit, a second terminal of the replenishment power transistor is coupled to a power supply terminal of the drive circuit, and a gate of the replenishment power transistor is configured to receive the reference voltage.

Abstract: This application discloses a drive circuit of a bridge arm switching transistor, a drive circuit, and a power converter. The bridge arm switching transistor includes a first switching transistor and a second switching transistor. A first terminal of the first switching transistor is connected to a power supply, a second terminal of the first switching transistor is connected to a first terminal of the second switching transistor, and a second terminal of the second switching transistor is grounded. The drive circuit includes a low-voltage region and at least two high-voltage regions isolated which include a first high-voltage region and a second high-voltage region. A semiconductor device configured to drive the second switching transistor is disposed in the low-voltage region. P-type semiconductor devices are disposed in each of the first high-voltage region and the second high-voltage region, and the P-type semiconductor devices are configured to drive the first switching transistor.

Abstract: This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.

Abstract: This application discloses a chip and a signal level shifter circuit for use on a mobile terminal such as a charger or an adapter. The chip is co-packaged with a first silicon-based driver die and a second silicon-based driver die that are manufactured by using a BCD technology, and a first gallium nitride die and a second gallium nitride die that are manufactured by using a gallium nitride technology. A first silicon-based circuit is integrated on the first silicon-based driver die, a second silicon-based circuit is integrated on the second silicon-based driver die, and a high-voltage resistant gallium nitride circuit is integrated on the first gallium nitride die. In this way, it can be ensured that a second low-voltage silicon-based driver die manufactured by using a low-voltage BCD technology is not damaged by a high input voltage, thereby reducing costs of the chip.