Patents by Inventor Xingqing WANG

Xingqing WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240306063
    Abstract: This application provides a downlink signal receiving method, a terminal, and a source base station. The method includes: sending a first capability indication to a source base station, wherein the first capability indication indicates that the terminal has an intra-frequency receiving capability; in response to the first capability indication, receiving a first message from the source base station, wherein the first message comprises a first indication, and the first indication indicates the terminal to receive, during a handover process, a downlink signal from the source base station and a downlink signal from a target base station, wherein the downlink signal from the source base station and the downlink signal from the target base station have a same frequency; and receiving during the handover process, the downlink signal from the source base station and the downlink signal from the target base station based on the first indication.
    Type: Application
    Filed: May 15, 2024
    Publication date: September 12, 2024
    Inventors: Xizeng DAI, Hong WANG, Jian ZHANG, Xingqing CHENG
  • Patent number: 10305300
    Abstract: The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q4, a PNP-type transistor Q2, resistors R20, R21, R24, R25, and a capacitor C2. A first end of the resistor R25 is connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Q4 is connected with a second end of the resistor R25. A source electrode of the N-type MOS transistor Q4 is connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Q4 is connected with the ground end of the storage battery by the resistor R20.
    Type: Grant
    Filed: March 10, 2017
    Date of Patent: May 28, 2019
    Assignee: SOCREAT ELECTRONICS TECHNOLOGY LIMITED
    Inventors: Zhenkun Yin, Baichuan Xiang, Xingqing Wang
  • Publication number: 20180115173
    Abstract: The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q4, a PNP-type transistor Q2, resistors R20, R21, R24, R25, and a capacitor C2. A first end of the resistor R25 is connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Q4 is connected with a second end of the resistor R25. A source electrode of the N-type MOS transistor Q4 is connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Q4 is connected with the ground end of the storage battery by the resistor R20.
    Type: Application
    Filed: March 10, 2017
    Publication date: April 26, 2018
    Inventors: Zhenkun YIN, Baichuan XIANG, Xingqing WANG