Abstract: The technology of this application relates to a communication method, apparatus, and system, and relates to the field of communication technologies. The method includes a first node performing data transmission with a destination node based on a first communication link, where the first communication link includes a second node. When the first communication link is unavailable, the first node performs data transmission with the destination node based on a second communication link, where the second communication link includes a third node different from the second node, and the second node and the third node belong to a destination node group. The second communication link serves as a redundant communication link of the first communication link, to provide communication support between the first node and the destination node for data transmission when the first communication link is unavailable, so as to improve communication reliability of a system.

Abstract: The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q4, a PNP-type transistor Q2, resistors R20, R21, R24, R25, and a capacitor C2. A first end of the resistor R25 is connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Q4 is connected with a second end of the resistor R25. A source electrode of the N-type MOS transistor Q4 is connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Q4 is connected with the ground end of the storage battery by the resistor R20.

Abstract: The present disclosure provides a self-activation circuit, where the self-activation circuit comprises an N-type metal oxide semiconductor (MOS) transistor Q4, a PNP-type transistor Q2, resistors R20, R21, R24, R25, and a capacitor C2. A first end of the resistor R25 is connected with a detection pin (CS) of the battery protection chip, and a drain electrode of the N-type MOS transistor Q4 is connected with a second end of the resistor R25. A source electrode of the N-type MOS transistor Q4 is connected with a ground end of the storage battery, and a gate electrode of the N-type MOS transistor Q4 is connected with the ground end of the storage battery by the resistor R20.