Abstract: A pressure self-controlled irrigation and pesticide application spray nozzle for a micro-irrigation system, the spray nozzle mainly comprising a spray nozzle body (1), a spray nozzle cap (10), a spring sleeve (7), flow guide holes (2), a spring washer (3), a mist spraying nozzle (4), a rotary acceleration chamber (5), a compression spring (6), circular-arc-shaped flow passages (8), a thread (9), refraction faces (11), an engagement recess, flow guide slots (15), a connecting rod movable hole (16), and a connecting rod (17). The spray nozzle is provided with a double-flow-passage structure. The spray nozzle body (1) is internally provided with the spring sleeve (7) and the spring washer (3). Water flow pressure is controlled to push the spring washer (3) to drive the spring sleeve (7) to move vertically, thereby achieving the switching between two operating modes, i.e., irrigation and mist spraying.

Abstract: A receiver, a receiver assembly and a heat pump system. The receiver includes a first pipe, a second pipe and a third pipe leading to the cavity of the receiver, wherein the first pipe, the second pipe and the third pipe connect to a first load unit, a second load unit and a cold and heat source unit, respectively.

Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap which resists degradation when exposed to the ambient atmosphere. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.

Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.

Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.