Patents by Inventor Xingye Wang

Xingye Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS
    Publication number: 20250313953
    Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.
    Type: Application
    Filed: June 18, 2025
    Publication date: October 9, 2025
    Inventors: Xingye Wang, Fu Tang, Eric Jen cheng Liu, Peijun Jerry Chen, YoungChol Byun
  • Methods and systems for forming doped silicon nitride films
    Patent number: 12378667
    Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.
    Type: Grant
    Filed: October 24, 2022
    Date of Patent: August 5, 2025
    Assignee: ASM IP Holding B.V.
    Inventors: Xingye Wang, Fu Tang, Eric Jen cheng Liu, Peijun Jerry Chen, YoungChol Byun
  • METHODS OF FORMING INTERCONNECT STRUCTURES
    Publication number: 20240258161
    Abstract: Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap which resists degradation when exposed to the ambient atmosphere. A barrier layer is selectively deposited on the sidewalls but not on the bottom of the gap. The SAM is removed after selectively depositing the barrier layer on the sidewalls.
    Type: Application
    Filed: January 22, 2024
    Publication date: August 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Yong Jin Kim, Carmen Leal Cervantes, Kevin Kashefi, Xingye Wang
  • METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS
    Publication number: 20230126516
    Abstract: A method of forming a doped silicon nitride film on a surface of a substrate and structures including the doped silicon nitride film are disclosed. Exemplary methods include forming a layer comprising silicon nitride using a first thermal process and forming a layer comprising doped silicon nitride using a second thermal process to thereby form the doped silicon nitride film.
    Type: Application
    Filed: October 24, 2022
    Publication date: April 27, 2023
    Inventors: Xingye Wang, Fu Tang, Eric Jen cheng Liu, Peijun Jerry Chen, YoungChol Byun
  • REACTOR SYSTEM AND METHOD FOR FORMING A LAYER COMPRISING INDIUM GALLIUM ZINC OXIDE
    Publication number: 20220403516
    Abstract: Reactor systems and methods for forming a layer comprising indium gallium zinc oxide are disclosed. The layer comprising indium gallium zinc oxide can be formed using one or more reaction chambers of a process module.
    Type: Application
    Filed: June 16, 2022
    Publication date: December 22, 2022
    Inventors: Paul Ma, Eric Shero, Todd Dunn, Jonathan Bakke, Jereld Winkler, Xingye Wang, Eric Jen Cheng Liu