Patents by Inventor Xingyu XIAO

Xingyu XIAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11922934
    Abstract: The present disclosure provides method and apparatus for generating a response in a human-machine conversation. A first sound input may be received in the conversation. A first audio attribute may be extracted from the first sound input, wherein the first audio attribute indicates a first condition of a user. A second sound input may be received in the conversation. A second audio attribute may be extracted from the second sound input, wherein the second audio attribute indicates a second condition of a user. A difference between the second audio attribute and the first audio attribute is determined, wherein the difference indicates a condition change of the user from the first condition to the second condition. A response to the second sound input is generated based at least on the condition change.
    Type: Grant
    Filed: April 19, 2018
    Date of Patent: March 5, 2024
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Jian Luan, Zhe Xiao, Xingyu Na, Chi Xiu, Jianzhong Ju, Xiang Xu
  • Publication number: 20230411398
    Abstract: Semiconductor structure and formation method are provided. A method of forming a semiconductor structure includes providing a dielectric layer on a substrate, the dielectric layer including a first region and a second region under the first region, the first region including discrete first initial nanowires, and the second region including discrete second initial nanowires; etching the dielectric layer and the first initial nanowires in the first region to form a first opening in the first region, and forming first nanowires from the first initial nanowires; etching the dielectric layer at a bottom of the first opening and the second initial nanowires to form a second opening in the second region, and forming second nanowires from the second initial nanowires; forming a second source/drain layer in the second opening; forming an isolation layer on the second source/drain layer; and forming a first source/drain layer in the first opening.
    Type: Application
    Filed: November 24, 2020
    Publication date: December 21, 2023
    Inventors: Haiyang ZHANG, Bo SU, Xingyu XIAO