Patents by Inventor Xingyuan Tang
Xingyuan Tang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8034725Abstract: This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.Type: GrantFiled: March 12, 2010Date of Patent: October 11, 2011Assignee: Novellus Systems, Inc.Inventors: Jon Henri, Xingyuan Tang, Jason Tian, Kevin Gerber, Arul N. Dhas
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Patent number: 7968436Abstract: Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.Type: GrantFiled: July 2, 2009Date of Patent: June 28, 2011Assignee: Novellus Systems, Inc.Inventors: Yongsik Yu, Karen Billington, Xingyuan Tang, Haiying Fu, Michael Carris, William Crew
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Patent number: 7737525Abstract: Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon-carbon triple bond, or carbon-carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7.Type: GrantFiled: November 7, 2007Date of Patent: June 15, 2010Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, Xingyuan Tang
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Patent number: 7704894Abstract: This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The methods of the invention involve dedicating a first station for temperature soak while flowing purge gas. Stopping the flow of reactant gas and flowing the purge gas for station 1 eliminates TEOS condensation on a cold wafer surface and significantly reduces the number of defects in the film, particularly for short temperature soaks.Type: GrantFiled: November 20, 2006Date of Patent: April 27, 2010Assignee: Novellus Systems, Inc.Inventors: Jon Henri, Xingyuan Tang, Jason Tian, Kevin Gerber, Arul N. Dhas
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Patent number: 7573061Abstract: Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.Type: GrantFiled: August 15, 2007Date of Patent: August 11, 2009Assignee: Novellus Systems, Inc.Inventors: Yongsik Yu, Karen Billington, Xingyuan Tang, Haiying Fu, Michael Carris, William Crew
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Patent number: 7341761Abstract: Methods of preparing a carbon doped oxide (CDO) layers having a low dielectric constant are provided. The methods involve, for instance, providing a substrate to a deposition chamber and exposing it to one or multiple carbon-doped oxide precursors having molecules with at least one carbon—carbon triple bond, or carbon—carbon double bond, or a combination of these groups and depositing the carbon doped oxide dielectric layer under conditions in which the resulting dielectric layer has a dielectric constant of not greater than about 2.7.Type: GrantFiled: March 11, 2004Date of Patent: March 11, 2008Assignee: Novellus Systems, Inc.Inventors: Qingguo Wu, Haiying Fu, Xingyuan Tang
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Patent number: 7282438Abstract: Copper diffusion barrier films having low dielectric constants are suitable for a variety of copper/inter-metal dielectric integration schemes. Copper diffusion barrier films in accordance with the invention are composed of one or more layers of silicon carbide, at least one of the silicon carbide layers having a composition of at least 40% carbon (C), for example, between about 45 and 60% carbon (C). The films' high carbon-content layer will have a composition wherein the ratio of C to Si is greater than 2:1; or >3:1; or >4:1; or >5.1. The high carbon-content copper diffusion barrier films have a reduced effective k relative to conventional barrier materials.Type: GrantFiled: June 15, 2004Date of Patent: October 16, 2007Assignee: Novellus Systems, Inc.Inventors: Yongsik Yu, Karen Billington, Xingyuan Tang, Haiying Fu, Michael Carris, William Crew
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Patent number: 6855645Abstract: A low-k precursor reactant compound containing silicon and carbon atoms is flowed into a CVD reaction chamber. High-frequency radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD apparatus, and low-frequency radio-frequency power is applied to the reaction chamber. Reactive components formed in the plasma react to form low-dielectric-constant silicon carbide (SiC) on a substrate surface. A low-k precursor is characterized by one of: a silicon atom and a carbon—carbon triple bond; a silicon atom and a carbon—carbon double bond; a silicon—silicon bond; or a silicon atom and a tertiary carbon group.Type: GrantFiled: December 30, 2002Date of Patent: February 15, 2005Assignee: Novellus Systems, Inc.Inventors: Xingyuan Tang, Haiying Fu
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Patent number: 6777349Abstract: Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.Type: GrantFiled: June 28, 2002Date of Patent: August 17, 2004Assignee: Novellus Systems, Inc.Inventors: Haiying Fu, Ka Shun Wong, Xingyuan Tang, Judy Hsiu-Chih Huang, Bart Jan van Schravendijk
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Publication number: 20040126929Abstract: A low-k precursor reactant compound containing silicon and carbon atoms is flowed into a CVD reaction chamber. High-frequency radio-frequency power is applied to form a plasma. Preferably, the reaction chamber is part of a dual-frequency PECVD apparatus, and low-frequency radio-frequency power is applied to the reaction chamber. Reactive components formed in the plasma react to form low-dielectric-constant silicon carbide (SiC) on a substrate surface. A low-k precursor is characterized by one of: a silicon atom and a carbon-carbon triple bond; a silicon atom and a carbon-carbon double bond; a silicon-silicon bond; or a silicon atom and a tertiary carbon group.Type: ApplicationFiled: December 30, 2002Publication date: July 1, 2004Applicant: Novellus Systems, Inc.Inventors: Xingyuan Tang, Haiying Fu
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Publication number: 20030176080Abstract: Hermetic amorphous doped silicon carbide is deposited on an integrated circuit substrate in a PECVD reactor. Nitrogen-doping of an SiC film is conducted by flowing nitrogen-containing molecules, preferably nitrogen or ammonia gas, into the reactor chamber together with an organosilane, preferably tetramethylsilane, and forming a plasma. Oxygen-doping is conducted by flowing oxygen-containing molecules into the reaction chamber.Type: ApplicationFiled: June 28, 2002Publication date: September 18, 2003Inventors: Haiying Fu, Ka Shun Wong, Xingyuan Tang, Judy Hsiu-Chih Huang, Bart Jan van Schravendijk