Patents by Inventor Xinhao Li

Xinhao Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250183167
    Abstract: A static random access memory (SRAM) cell includes: a substrate; first and second interconnection structures parallel to an upper surface of the substrate and opposite to each other; a first pull-down (PD) transistor and a first pass gate (PG) transistor on the first interconnection structure; a second PD transistor and a second PG transistor on the second interconnection structure; a first pull-up (PU) transistor under the first interconnection structure and overlapping vertically with the first PD transistor; and a second PU transistor under the second interconnection structure and overlapping vertically with the second PD transistor. Channel layers of the first PU, PD, PG transistors are offset from the first interconnection structure on a side away from the second interconnection structure. Channel layers of the second PU, PD, PG transistors are offset from the second interconnection structure on a side away from the first interconnection structure.
    Type: Application
    Filed: December 27, 2023
    Publication date: June 5, 2025
    Inventors: Huilong Zhu, Xinhao Li
  • Publication number: 20250126770
    Abstract: Provided are a static random access memory (SRAM) cell, a memory, and an electronic device. The SRAM cell may include a first pull-up transistor, a second pull-up transistor, a first pull-down transistor, a second pull-down transistor, a first pass-gate transistor, and a second pass-gate transistor on a substrate. The first and second pull-up transistors are provided at a first height relative to the substrate. The first and second pull-down transistors and the first and second pass-gate transistors are provided at a second height different from the first height relative to the substrate. Each of the transistors includes a channel nanosheet extending in a first direction and source/drain portions provided above and below the channel nanosheet respectively. The first pull-down transistor is aligned with the first pull-up transistor in a vertical direction, and the second pull-down transistor is aligned with the second pull-up transistor in the vertical direction.
    Type: Application
    Filed: May 21, 2024
    Publication date: April 17, 2025
    Inventors: Huilong Zhu, Xinhao Li
  • Publication number: 20250028776
    Abstract: Embodiments of the present disclosure provide a page processing method and device, an electronic device, a storage medium, a computer program product, and a computer program. The method includes: receiving a page display request; loading a page resource of a target page in response to the page display request, where the page resource includes a configuration file and page logic from a server, and the target page is a native page; and displaying the target page based on the page resource.
    Type: Application
    Filed: November 2, 2022
    Publication date: January 23, 2025
    Inventor: Xinhao LI
  • Publication number: 20240307886
    Abstract: The present invention is related to an inlet arrangement for a grinding machine, preferably a roller mill, comprising a main sensor, preferably a force sensor, and an additional sensor, preferably a level sensor, that extends into the storage container to a level that corresponds to the level where the main sensor is provided, and a control unit which is configured to generate, from the values determined by the main sensor and the additional sensor and from a setpoint value, an output signal to control the flow of the milling material out of the storage container. The present invention is further more related to said control unit, a grinding machine, preferably a roller mill, comprising said inlet arrangement, and to a method for determining and controlling the level of milling material in a storage container for milling material of a grinding machine, preferably a roller mill, involving the above inlet arrangement.
    Type: Application
    Filed: July 12, 2021
    Publication date: September 19, 2024
    Inventors: Simon WITTWER, Philipp FRITSCHI, Xinhao LI
  • Publication number: 20220254760
    Abstract: Methods, systems, and materials for producing micro-pixelated LEDs capable of achieving a full-color spectrum through stereolithography techniques are provided. The techniques include depositing a photocurable nanophosphor ink composition onto a substrate, projecting a pattern onto the substrate and ink composition, and then curing at least a portion of the ink composition based on the projected pattern. The ink composition includes at least one photocurable polymer, a plurality of nanophosphors (e.g., QDs), and at least one light-scattering additive. The resulting cured ink composition and substrate component can be a pixelated LED that is configured to fully convert blue light-emitting pixels to red and green light-emitting pixels. Printing systems for performing these methods and producing these LEDs are also disclosed, as are various, non-limiting examples of ink composition formulations.
    Type: Application
    Filed: July 9, 2020
    Publication date: August 11, 2022
    Inventors: Darshan KUNDALIYA, Xinhao LI, Maria ANC, Nicholas FANG
  • Publication number: 20210373361
    Abstract: Intelligent control of solar transmission through windows promises to reduce energy consumption for thermal comfort in buildings. However, the ability of current smart windows to regulate solar gain based on tunable extinction of phase-change materials is not optimum. A thin-film thermochromic device based on tunable light scattering of hydrogel microparticles of prescribed diameters is reported. In the study, poly (N-isopropylacrylamide)-2-Aminoethylmethacrylate hydrochloride (pNIPAm-AEMA) microparticles are synthesized, with low phase transition temperature ˜32° C. Notably, the average size of pNIPAm-AEMA particles can vary from 1388 nm at 25° C. to 546 nm at 35° C., leading to unprecedented infrared transmittance modulation of 75.6%, in agreement with the numerical simulation based on Mie theory. A high luminous transmittance of 87.2% is accomplished.
    Type: Application
    Filed: November 6, 2019
    Publication date: December 2, 2021
    Applicants: MASSACHUSETTS INSTITUTE OF TECHNOLOGY, University of Hong Kong
    Inventors: Nicholas Fang, Xinhao Li, Chang Liu, Shien-Ping Feng