Patents by Inventor Xinhe Jerry LIM

Xinhe Jerry LIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate processing method and substrate processing apparatus
    Patent number: 11501976
    Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.
    Type: Grant
    Filed: February 19, 2021
    Date of Patent: November 15, 2022
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Seiichi Watanabe, Kazuki Narishige, Xinhe Jerry Lim, Jianfeng Xu, Yi Hao Ng, Zhenkang Max Liang, Yujun Nicholas Loo, Chiew Wah Yap, Bin Zhao, Chai Jin Chua, Takehito Watanabe, Koji Kawamura, Kenji Komatsu, Li Jin, Wee Teck Tan, Dali Liu
  • SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
    Publication number: 20210265170
    Abstract: A substrate processing method performed in a chamber of a substrate processing apparatus is provided. The chamber includes a substrate support, an upper electrode, and a gas supply port. The substrate processing method includes (a) providing the substrate on the substrate support; (b) supplying a first processing gas into the chamber; (c) continuously supplying an RF signal into the chamber while continuously supplying a negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber; and (d) supplying a pulsed RF signal while continuously supplying the negative DC voltage to the upper electrode, to generate plasma from the first processing gas in the chamber. The process further includes repeating alternately repeating the steps (c) and (d), and a time for performing the step (c) once is 30 second or shorter.
    Type: Application
    Filed: February 19, 2021
    Publication date: August 26, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Seiichi WATANABE, Kazuki NARISHIGE, Xinhe Jerry LIM, Jianfeng XU, Yi Hao NG, Zhenkang Max LIANG, Yujun Nicholas LOO, Chiew Wah YAP, Bin ZHAO, Chai Jin CHUA, Takehito WATANABE, Koji KAWAMURA, Kenji KOMATSU, Li JIN, Wee Teck TAN, Dali LIU