Patents by Inventor Xinhui Niu

Xinhui Niu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6833914
    Abstract: The present invention relates to an efficient method for accurately simulating the integrated reflectometry response from two-dimensional grating structures using a few points. First a first and a second point are determined within an aperture located in an optical system. Next, the reflectance response of light incident at the first point and the second point are simulated. The approximated integrated reflectance response of the aperture is then determined based on the reflectance response at the first point and the second point and the weighted average of the reflectance response at the first point and the second point.
    Type: Grant
    Filed: October 23, 2001
    Date of Patent: December 21, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Junwei Bao, Xinhui Niu, Nickhil Jakatdar
  • Publication number: 20040225477
    Abstract: The present invention relates to a method and system for efficiently determining grating profiles using dynamic learning in a library generation process. The present invention also relates to a method and system for searching and matching trial grating profiles to determine shape, profile, and spectrum data information associated with an actual grating profile.
    Type: Application
    Filed: May 27, 2004
    Publication date: November 11, 2004
    Applicant: Timbre Technologies, Inc.
    Inventors: Xinhui Niu, Nickhil Jakatdar
  • Publication number: 20040220760
    Abstract: The present invention relates to a method and system for efficiently determining grating profiles using dynamic learning in a library generation process. The present invention also relates to a method and system for searching and matching trial grating profiles to determine shape, profile, and spectrum data information associated with an actual grating profile.
    Type: Application
    Filed: May 27, 2004
    Publication date: November 4, 2004
    Applicant: Timbre Technologies, Inc.
    Inventors: Xinhui Niu, Nickhil Jakatdar
  • Publication number: 20040212812
    Abstract: The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.
    Type: Application
    Filed: May 24, 2004
    Publication date: October 28, 2004
    Applicant: Timbre Technologies, Inc.
    Inventors: Joerg Bischoff, Xinhui Niu, Junwei Bao
  • Patent number: 6804005
    Abstract: Overlay measurements for a semiconductor wafer are obtained by forming a periodic grating on the wafer having a first set of ridges and a second set of ridges. The first and second sets of ridges are formed on the wafer using a first mask and a second mask, respectively. After forming the first and second sets of gratings, zero-order cross polarization measurements of a portion of the periodic grating are obtained. Any overlay error between the first and second masks used to form the first and second sets of gratings is determined based on the obtained zero-order cross polarization measurements.
    Type: Grant
    Filed: May 2, 2002
    Date of Patent: October 12, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Joerg Bischoff, Xinhui Niu
  • Publication number: 20040184035
    Abstract: An optical metrology system includes a photometric device with a source configured to generate and direct light onto a structure, and a detector configured to detect light diffracted from the structure and to convert the detected light into a measured diffraction signal. A processing module of the optical metrology system is configured to receive the measured diffraction signal from the detector to analyze the structure. The optical metrology system also includes a generic interface disposed between the generic interface and the processing module. The generic interface is configured to provide the measured diffraction signal to the processing module using a standard set of signal parameters. The standard set of signal parameters includes a reflectance parameter that characterizes the change in intensity of light when reflected on the structure and a polarization parameter that characterizes the change in polarization states of light when reflected on the structure.
    Type: Application
    Filed: March 20, 2003
    Publication date: September 23, 2004
    Inventors: Shifang Li, Junwei Bao, Nickhil Jakatdar, Xinhui Niu
  • Patent number: 6785638
    Abstract: The present invention relates to a method and system for efficiently determining grating profiles using dynamic learning in a library generation process. The present invention also relates to a method and system for searching and matching trial grating profiles to determine shape, profile, and spectrum data information associated with an actual grating profile.
    Type: Grant
    Filed: August 6, 2001
    Date of Patent: August 31, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Xinhui Niu, Nickhil Jakatdar
  • Publication number: 20040167754
    Abstract: Eigensolutions for use in determining the profile of a structure formed on a semiconductor wafer can be approximated by obtaining a known set of eigenvectors associated with a first section of a hypothetical profile of the structure, where the known set of eigenvectors is used to generate a simulated diffraction signal for the hypothetical profile. A known characteristic matrix associated with a second section of a hypothetical profile is obtained, and an approximated set of eigenvalues for the second section is determined based on the known set of eigenvectors associated with the first section and the known characteristic matrix associated with the second section.
    Type: Application
    Filed: February 26, 2003
    Publication date: August 26, 2004
    Inventors: Joerg Bischoff, Karl Hehl, Xinhui Niu, Wen Jin
  • Patent number: 6775015
    Abstract: The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.
    Type: Grant
    Filed: June 18, 2002
    Date of Patent: August 10, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Joerg Bischoff, Xinhui Niu, Junwei Bao
  • Publication number: 20040150838
    Abstract: A wafer structure profile is modeled by determining one or more termination criteria. A determination is made as to whether a wafer structure includes at least one layer having three or more materials alone a line within the at least one layer. An optical metrology model for the wafer structure is created, where three or more materials are incorporated in the model for the at least one layer having three or more materials. A set of diffraction signals is simulated using the optical metrology model. The set of simulated diffraction signals and a set of diffraction signals measured off of the wafer structure are used to determine if the one or more termination criteria are met. The optical metrology model is modified until the one or more termination criteria are met.
    Type: Application
    Filed: February 3, 2003
    Publication date: August 5, 2004
    Inventors: Xinhui Niu, Nickhil Jakatdar
  • Patent number: 6772084
    Abstract: Overlay measurements for a semiconductor wafer are obtained by forming a periodic grating on the wafer having a first set of gratings and a second set of gratings. The first and second sets of gratings are formed on the wafer using a first mask and a second mask, respectively. The first and second sets of gratings are intended to be formed on the wafer with an intended asymmetrical alignment. A diffraction signal of the first and second sets of gratings is measured after the first and second sets of gratings are formed on the wafer. The misalignment between the first and second sets of gratings formed on the wafer is determined based on the measured diffraction signal.
    Type: Grant
    Filed: January 31, 2002
    Date of Patent: August 3, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Joerg Bischoff, Xinhui Niu, Nickhil Jakatdar
  • Publication number: 20040147048
    Abstract: The present invention includes a method and system for identifying an underlying structure that achieves improved planarization characteristics of layers while minimizing introduction of random and/or systematic noise to the reflected metrology signal.
    Type: Application
    Filed: January 13, 2004
    Publication date: July 29, 2004
    Applicant: Timbre Technologies, Inc.
    Inventors: Nickhil Jakatdar, Xinhui Niu
  • Publication number: 20040137341
    Abstract: Overlay measurements are obtained by forming a first grating test pattern using a first layer mask. A second grating test pattern is formed using a second layer mask. The first and second grating test patterns have the same periodicity. The first and second grating test patterns are measured using an optical metrology equipment. The alignment of the second layer mask to the first layer mask is measured based on the measurement of the first and second grating test patterns.
    Type: Application
    Filed: December 17, 2003
    Publication date: July 15, 2004
    Inventors: Xinhui Niu, Nickhil Jakatdar
  • Patent number: 6750961
    Abstract: The invention teaches a method and system for an accurate profile characterization of test patterns that may be implemented for real time use in a fabrication line. One embodiment is a non-destructive method for acquiring the profile data of the test pattern lines through the use of spectrum data measured with an optical metrology device and a profile library. The profile data comprise critical dimensions of all the test pattern lines included in the set of parameters to create the profile library. The test pattern lines may be designed to evaluate the effectiveness of measures to correct optical proximity, micro-loading or other process effects.
    Type: Grant
    Filed: January 21, 2003
    Date of Patent: June 15, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Xinhui Niu, Nickhil Jakatdar
  • Patent number: 6743646
    Abstract: One embodiment of the present invention is a method of designing underlying structures in a wafer with pads of varying sizes and varying loading factors, and selecting the design of pads that yield a reflected metrology signal closest to the calibration metrology signal and that meet preset standard planarization characteristics. Another embodiment is a method of designing underlying structures with random shapes of varying sizes and varying loading factors. Still another embodiment is the use of periodic structures of varying line-to-space ratios in one or more underlying layers of a wafer, the periodicity of the underlying periodic structure being positioned at an angle relative to the direction of periodicity of the target periodic structure of the wafer.
    Type: Grant
    Filed: October 22, 2001
    Date of Patent: June 1, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Nickhil Jakatdar, Xinhui Niu
  • Publication number: 20040078173
    Abstract: One or more simulated diffraction signals for use in determining the profile of a structure formed on a semiconductor wafer can be generated, where the profile varies in more than one dimension. Intermediate calculations are generated for variations in a hypothetical profile of the structure in a first dimension and a second dimension, where each intermediate calculation corresponds to a portion of the hypothetical profile of the structure. The generated intermediate calculations are then stored and used in generating one or more simulated diffraction signals for one or more hypothetical profiles of the structure.
    Type: Application
    Filed: October 17, 2002
    Publication date: April 22, 2004
    Inventors: Joerg Bischoff, Xinhui Niu
  • Patent number: 6699624
    Abstract: A metrology for determining bias or overlay error in lithographic processes. This metrology includes a set of diffraction test patterns, optical inspection techniques by using spectroscopic ellipsometer or reflectometer and a method of test pattern profile extraction. The invention uses a set of diffraction gratings as the test patterns, and thin film metrology equipment, such as spectroscopic ellipsometer or spectroscopic reflectometer. The profiles of the test patterns in the two successive layers are analyzed. Overlay information is obtained after processing the profile data. In a first aspect of the invention, a line-on-line overlay grating test patterns structure is disclosed in which a second layer mask is placed in the center of a clear line in a first layer mask. In a second aspect of the invention, a line-in-line overlay grating test patterns structure is disclosed in which a second layer mask is placed in the center of a dark line in the first mask.
    Type: Grant
    Filed: February 27, 2001
    Date of Patent: March 2, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Xinhui Niu, Nickhil Jakatdar
  • Patent number: 6694275
    Abstract: A quality control system implemented by a service provider for a user via the utilization of sophisticated software algorithms in creating a library of profiles based on product specification. These libraries of profiles are compared with profiles of manufactured products to ensure that manufactured products are within the specification. While the measurement of the manufactured products can be taken in real time, the generation of the profile library is very computationally intensive and requires the use of a highly parallel set of computer workstations for its operation. The system allows for the separation of the computational intensive process from the real-time measurement reading, and creates an opportunity for a service provider to generate and maintain the libraries offsite.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: February 17, 2004
    Assignee: Timbre Technologies, Inc.
    Inventors: Nickhil Jakadar, Xinhui Niu
  • Publication number: 20040017574
    Abstract: A profile model for use in optical metrology of structures in a wafer is selected, the profile model having a set of geometric parameters associated with the dimensions of the structure. A set of optimization parameters is selected for the profile model using one or more input diffraction signals and one or more parameter selection criteria. The selected profile model and the set of optimization parameters are tested against one or more termination criteria. The process of selecting a profile model, selecting a set of optimization parameters, and testing the selected profile model and set of optimization parameters is performed until the one or more termination criteria are met.
    Type: Application
    Filed: July 25, 2002
    Publication date: January 29, 2004
    Inventors: Vi Vuong, Emmanuel Drege, Junwei Bao, Srinivas Doddi, Xinhui Niu, Nickhil Jakatdar
  • Publication number: 20030232454
    Abstract: The profile of a single feature formed on a wafer can be determined by obtaining an optical signature of the single feature using a beam of light focused on the single feature. The obtained optical signature can then be compared to a set of simulated optical signatures, where each simulated optical signature corresponds to a hypothetical profile of the single feature and is modeled based on the hypothetical profile.
    Type: Application
    Filed: June 18, 2002
    Publication date: December 18, 2003
    Inventors: Joerg Bischoff, Xinhui Niu, Junwei Bao