Patents by Inventor Xinjian Lei

Xinjian Lei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250257461
    Abstract: The disclosed and claimed subject matter relates to a method for depositing tin-containing films that includes the steps of (a) contacting a substrate with organotin alkoxide precursor vapor in a deposition reactor, (b) thereafter introducing an organotin amide precursor vapor in a deposition reactor wherein the organo group is different from the organo group in the organotin alkoxide precursor, (c) purging the reactor vessel with inert gas, (d) contacting the substrate with a water-containing vapor to form an organotin oxo network layer, (e) purging the reactor vessel with inert gas.
    Type: Application
    Filed: February 6, 2025
    Publication date: August 14, 2025
    Inventors: XINJIAN LEI, ANGELICA AZCATL ZACATZI, CHILIANG CHEN
  • Publication number: 20250250673
    Abstract: The disclosed and claimed subject matter relates to atomic layer deposition (ALD) of 2D MoX2 (X=S, Se or Te) utilizing one or more of MoO2Cl2 and MoO2Br2 as the Mo-precursor with alkyl-chalcogenide, alkyl-dichalcogenide, and/or dihydro-chalcogenide precursors while maintaining the process in a self-limiting-layer-synthesis growth mode or a self-limiting-layer-synthesis-like growth mode.
    Type: Application
    Filed: October 26, 2022
    Publication date: August 7, 2025
    Inventors: Michael Miller, Randall Higuchi, Thong Ngo, Angelica Azcatl-Zacatzi, Xinjian Lei
  • Publication number: 20250230175
    Abstract: A composition useful in depositing low dielectric constant (low k) insulating materials into high aspect ratio gaps, trenches, vias, and other surface features, of semiconductor devices by Atomic Layer Deposition (ALD) or Chemical Vapor Deposition (CVD) processes is disclosed. A first composition may comprise an alkoxysilanediol. The alkoxy-based substituent of the silanediol may be a branched, or cyclic, alkyl group having between 3 to 10 carbon atoms. In another instance, the composition may comprise an alkoxysilanol. The alkoxy-based substituent of the silanol may be a branched, or cyclic, alkyl group having between 3 to 10 carbon atoms.
    Type: Application
    Filed: October 18, 2022
    Publication date: July 17, 2025
    Inventors: DANIEL MOSER, Ph.D., XINJIAN LEI
  • Publication number: 20250223466
    Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.
    Type: Application
    Filed: March 28, 2025
    Publication date: July 10, 2025
    Inventors: RAYMOND N. VRTIS, ROBERT G. RIDGEWAY, XINJIAN LEI, MING LI, MANCHAO XIAO
  • Publication number: 20250188605
    Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.
    Type: Application
    Filed: July 29, 2024
    Publication date: June 12, 2025
    Inventors: Jianheng Li, John Francis Lehmann, Xinjian Lei, Raymond Nicholas Vrtis, Robert Gordon Ridgeway, William R. Entley
  • Publication number: 20250183029
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Application
    Filed: February 7, 2025
    Publication date: June 5, 2025
    Inventors: MARK LEONARD O'NEILL, MANCHAO XIAO, XINJIAN LEI, RICHARD HO, HARIPIN CHANDRA, MATTHEW R. MACDONALD, MEILIANG WANG
  • Patent number: 12312684
    Abstract: The siloxanes containing compositions and methods are disclosed. The disclosed method relates to a method of depositing a dielectric film on a substrate, the method involving the steps of a) placing the substrate in a reaction chamber; b) introducing a process gas comprising a cyclic silicon-containing compound and an oxidant; and c) exposing the substrate to the process gas under conditions such that the cyclic silicon-containing compound and the oxidant react to form a flowable film on the substrate surface. The method can further involve converting the flowable film into a solid dielectric material (e.g., a silicon oxide film). In certain embodiments, conversion of the film may be accomplished by annealing the as-deposited film by a thermal, plasma anneal and/UV curing.
    Type: Grant
    Filed: June 16, 2019
    Date of Patent: May 27, 2025
    Assignee: Versum Materials US, LLC
    Inventors: Jianheng Li, Xinjian Lei, Raymond N. Vrtis, Robert G. Ridgeway
  • Patent number: 12297115
    Abstract: A method and composition for depositing a silicon oxide film in an atomic layer deposition process at one or more temperatures of 600° C. or greater are provided. In one aspect, there is provided a method to deposit a silicon oxide film or material on a substrate in a reactor at one or more temperatures ranging from about 600° C. to 1000° C.; comprising the steps of: introducing into the reactor at least one halidocarbosilane precursor selected from the group of compounds having Formulae I and II described herein; purging the reactor with a purge gas; introducing an oxygen-containing source into the reactor; and purging the reactor with a purge gas; and wherein the steps are repeated until a desired thickness of silicon oxide is deposited.
    Type: Grant
    Filed: October 4, 2019
    Date of Patent: May 13, 2025
    Assignee: Versum Materials US, LLC
    Inventors: Meiliang Wang, Xinjian Lei
  • Publication number: 20250146131
    Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.
    Type: Application
    Filed: May 10, 2023
    Publication date: May 8, 2025
    Inventors: STEVEN GERARD MAYORGA, HARIPIN CHANDRA, XINJIAN LEI
  • Patent number: 12264258
    Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon carbide, silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using the co-deposition of an at least one first compound comprising a C—C double or C—C triple bond.
    Type: Grant
    Filed: July 24, 2020
    Date of Patent: April 1, 2025
    Assignee: Versum Materials US, LLC
    Inventors: Raymond N. Vrtis, Robert G. Ridgeway, Xinjian Lei, Ming Li, Manchao Xiao
  • Publication number: 20250101586
    Abstract: Halide-functionalized cyclotrisilazane precursor compounds according to Formulae A and B, and methods using the same, for depositing a silicon-containing film such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbonitride, silicon oxycarbonitride, or carbon-doped silicon oxide via a thermal atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) process, and combinations thereof.
    Type: Application
    Filed: January 25, 2023
    Publication date: March 27, 2025
    Inventors: Manchao Xiao, Haripin Chandra, Xinjian Lei, Matthew R. MacDonald, Mahsa Konh, Pegah Bagheri
  • Patent number: 12230496
    Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below: In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
    Type: Grant
    Filed: September 8, 2021
    Date of Patent: February 18, 2025
    Assignee: VERSUM MATERIALS US, LLC
    Inventors: Mark Leonard O'Neill, Manchao Xiao, Xinjian Lei, Richard Ho, Haripin Chandra, Matthew R. MacDonald, Meiliang Wang
  • Publication number: 20250011924
    Abstract: A method for depositing a multi-layered silicon nitride film using a combination of deposition methods includes the steps of placing the substrate into a first reactor and depositing on at least a portion of a surface of a substrate a first silicon nitride film, a second silicon nitride film, and a third silicon nitride film, which together form the multi-layered silicon nitride film, in a sequence of deposition methods alternating between (i) either plasma enhanced atomic layered deposition (PEALD) or plasma enhanced cyclic chemical vapor deposition (PECCVD), and (ii) PECVD as described herein and using at least one silicon precursor compound comprising at least three Si—N bonds and at least three SiH3 groups represented by formulae A to C described herein.
    Type: Application
    Filed: November 10, 2022
    Publication date: January 9, 2025
    Inventors: SE-WON LEE, MOO-SUNG KIM, CHANG-WON LEE, XINJIAN LEI
  • Publication number: 20250010331
    Abstract: A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxy silane; and applying energy to the gaseous composition comprising alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.40 to ˜3.20, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon of from ˜10 to ˜45 as measured by XPS.
    Type: Application
    Filed: October 11, 2022
    Publication date: January 9, 2025
    Inventors: MATTHEW R. MACDONALD, XINJIAN LEI, MICHAEL JAMES FOODY
  • Patent number: 12163224
    Abstract: Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.
    Type: Grant
    Filed: October 6, 2016
    Date of Patent: December 10, 2024
    Assignees: VERSUM MATERIALS US, LLC, BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
    Inventors: Xinjian Lei, Moo-Sung Kim, Anupama Mallikarjunan, Aaron Michael Dangerfield, Luis Fabián Peña, Yves Jean Chabal
  • Publication number: 20240392434
    Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.
    Type: Application
    Filed: August 6, 2024
    Publication date: November 28, 2024
    Inventors: JIANHENG LI, XINJIAN LEI, ROBERT GORDON RIDGEWAY, RAYMOND NICHOLAS VRTIS, MANCHAO XIAO, RICHARD HO
  • Publication number: 20240304438
    Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.
    Type: Application
    Filed: May 14, 2024
    Publication date: September 12, 2024
    Inventors: HARIPIN CHANDRA, XINJIAN LEI, ANUPAMA MALLIKARJUNAN, MOO-SUNG KIM
  • Publication number: 20240287257
    Abstract: Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.
    Type: Application
    Filed: March 22, 2024
    Publication date: August 29, 2024
    Inventors: Manchao Xiao, Matthew R. MacDonald, Xinjian Lei, Meiliang Wang
  • Patent number: 12049695
    Abstract: Compositions for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, a trisilylamine-based compound, and a cyclic trisilazane compound.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: July 30, 2024
    Assignee: Versum Materials US, LLC
    Inventors: Raymond Nicholas Vrtis, William Robert Entley, Robert Gordon Ridgeway, Xinjian Lei, John Francis Lehmann, Manchao Xiao
  • Publication number: 20240240309
    Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising hydrido-dimethyl-alkoxysilane; and applying energy to the gaseous composition comprising hydrido-dimethyl-alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising hydrido-dimethyl-alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.50, an elastic modulus of from ˜6 to ˜32 GPa, and an at. % carbon from ˜10 to ˜35 as measured by XPS.
    Type: Application
    Filed: May 16, 2022
    Publication date: July 18, 2024
    Inventors: WILLIAM ROBERT ENTLEY, JENNIFER LYNN ANNE ACHTYL, XINJIAN LEI, MANCHAO XIAO, ROBERT GORDON RIDGEWAY, RAYMOND NICHOLAS VRTIS, DANIEL P. SPENCE