Abstract: An N-phase power converter has N phases with outputs connected in parallel and outputs connected in parallel. The converter comprises: N switch units, wherein each phase of the N-phase power converter comprises one of the N switch units; and an integrated inductor unit, comprising M inductor subunits, wherein M is a natural number greater than or equal to 2, each inductor subunit comprises i inductors, i is a natural number greater than or equal to 2, N>M×i or N=M×i, M×i of the inductors in the integrated inductor unit are respectively coupled to M×i of the N switch units, wherein: the i inductors of each of the inductor subunit are inverse-coupled to each other, the coupling coefficient between the M inductor subunits is less than the coupling coefficient between the i inductors in each of the inductor subunits.

Abstract: An N-phase power converter has N phases with outputs connected in parallel and outputs connected in parallel. The converter comprises: N switch units, wherein each phase of the N-phase power converter comprises one of the N switch units; and an integrated inductor unit, comprising M inductor subunits, wherein M is a natural number greater than or equal to 2, each inductor subunit comprises i inductors, i is a natural number greater than or equal to 2, N>M×i or N=M×i, M×i of the inductors in the integrated inductor unit are respectively coupled to M×i of the N switch units, wherein: the i inductors of each of the inductor subunit are inverse-coupled to each other, the coupling coefficient between the M inductor subunits is less than the coupling coefficient between the i inductors in each of the inductor subunits.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: An N-phase power converter has N phases with outputs connected in parallel and outputs connected in parallel. The converter comprises: N switch units, wherein each phase of the N-phase power converter comprises one of the N switch units; and an integrated inductor unit, comprising M inductor subunits, wherein M is a natural number greater than or equal to 2, each inductor subunit comprises i inductors, i is a natural number greater than or equal to 2, N>M×i or N=M×i, M×i of the inductors in the integrated inductor unit are respectively coupled to M×i of the N switch units, wherein: the i inductors of each of the inductor subunit are inverse-coupled to each other, the coupling coefficient between the M inductor subunits is less than the coupling coefficient between the i inductors in each of the inductor subunits.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: The present disclosure provides a semiconductor chip power supply system, including: a semiconductor chip including: a first data processing function area and a first power converter control area, the first data processing function area and the first power converter control area being formed on a first semiconductor substrate of the semiconductor chip; and a first power converter power stage located outside the first semiconductor substrate and electrically connected to the first power converter control area and the first data processing function area; wherein the first power converter control area controls the first power converter power stage to supply power to the first data processing function area.

Abstract: An N-phase power converter has N phases with outputs connected in parallel and outputs connected in parallel. The converter comprises: N switch units, wherein each phase of the N-phase power converter comprises one of the N switch units; and an integrated inductor unit, comprising M inductor subunits, wherein M is a natural number greater than or equal to 2, each inductor subunit comprises i inductors, i is a natural number greater than or equal to 2, N>M×i or N=M×i, M×i of the inductors in the integrated inductor unit are respectively coupled to M×i of the N switch units, wherein: the i inductors of each of the inductor subunit are inverse-coupled to each other, the coupling coefficient between the M inductor subunits is less than the coupling coefficient between the i inductors in each of the inductor subunits.