Patents by Inventor Xinjiang Zhang

Xinjiang Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Floating memristor
    Publication number: 20180277552
    Abstract: A floating memristor with a nano-battery between a top and bottom floating gates is disclosed. The floating memristor includes a nano-battery, a top floating gate assembly disposed on an anode of the nano-battery, and a bottom floating gate assembly disposed on a cathode of the nano-battery. The floating memristor is an artificial synapse. The top floating gate assembly and the anode of the nano-battery convert electric signal to ionic signal by tunneling effect and field effect to simulate a presynaptic membrane. The electrolyte of the nano-battery is an ionic channel as a synaptic gap. The anode and the bottom floating gate transfer the ionic signal to electric signal by field effect and tunneling effect to simulate a postsynaptic membrane.
    Type: Application
    Filed: August 10, 2017
    Publication date: September 27, 2018
    Applicant: BEIHANG UNIVERSITY
    Inventors: Anping HUANG, XINJIANG ZHANG
  • Floating memristor
    Patent number: 10083974
    Abstract: A floating memristor with a nano-battery between a top and bottom floating gates is disclosed. The floating memristor includes a nano-battery, a top floating gate assembly disposed on an anode of the nano-battery, and a bottom floating gate assembly disposed on a cathode of the nano-battery. The floating memristor is an artificial synapse. The top floating gate assembly and the anode of the nano-battery convert electric signal to ionic signal by tunneling effect and field effect to simulate a presynaptic membrane. The electrolyte of the nano-battery is an ionic channel as a synaptic gap. The anode and the bottom floating gate transfer the ionic signal to electric signal by field effect and tunneling effect to simulate a postsynaptic membrane.
    Type: Grant
    Filed: August 10, 2017
    Date of Patent: September 25, 2018
    Assignee: BEIHANG UNIVERSITY
    Inventors: Anping Huang, Xinjiang Zhang