Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.

Abstract: An on-chip adaptive optical receiver system, an optical chip, and a communication device are disclosed, which are applied to optical communication. The on-chip adaptive optical receiver system includes an antenna array configured for separating received spatial light to obtain a plurality of sub-light spots; an optical phased array configured for performing phase-shifting processing and beam combining processing on the sub-light spots to obtain combined light; and an optical receiving module configured for demultiplexing the combined light to obtain beacon light. The optical receiving module is further configured for detecting intensity information of the beacon light and generating a feedback signal according to the intensity information.

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD).

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

Abstract: Aspects of the invention include a computer-implemented method that receives, by a processor, an ensemble decision tree and generates, by the processor, native code from the ensemble decision tree. The method compiles, by the processor, the native code into machine language and scores, by the processor, the execution time of the native code. The method dynamically reoptimizes, by the processor, portions of the native code corresponding to the most traversed portion of the ensemble decision tree.

Abstract: Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

Abstract: Devices comprising a resistance-switching polymer film are described. Also described are methods of making the devices comprising the resistance-switching polymer film.

Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

Abstract: Aspects of the invention include a computer-implemented method that receives, by a processor, an ensemble decision tree and generates, by the processor, native code from the ensemble decision tree. The method compiles, by the processor, the native code into machine language and scores, by the processor, the execution time of the native code. The method dynamically reoptimizes, by the processor, portions of the native code corresponding to the most traversed portion of the ensemble decision tree.

Abstract: A terahertz temporal and spatial resolution imaging system is provided. The system includes: a sample placing rack; a detection crystal, located on the exit side of the sample placing rack; a pump light generating device, for generating a pump light to irradiate the test sample; a terahertz light generating device, for generating a terahertz light to irradiate the test sample, irradiate the detection crystal after obtaining information about the test sample, and modulate an index ellipsoid of the detection crystal; a detection light generating device, for generating a detection light to irradiate the detection crystal to detect the index ellipsoid of the detection crystal, thereby indirectly obtaining the information about the test sample; and an imaging apparatus, located in an optical path after the detection light passes through the detection crystal, for collecting terahertz images of the test sample.

Abstract: A terahertz temporal and spatial resolution imaging system is provided. The system includes: a sample placing rack; a detection crystal, located on the exit side of the sample placing rack; a pump light generating device, for generating a pump light to irradiate the test sample; a terahertz light generating device, for generating a terahertz light to irradiate the test sample, irradiate the detection crystal after obtaining information about the test sample, and modulate an index ellipsoid of the detection crystal; a detection light generating device, for generating a detection light to irradiate the detection crystal to detect the index ellipsoid of the detection crystal, thereby indirectly obtaining the information about the test sample; and an imaging apparatus, located in an optical path after the detection light passes through the detection crystal, for collecting terahertz images of the test sample.