Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

Abstract: A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoF6) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.

Abstract: Methods of depositing thermally conductive polymeric films are described. Each of the methods include flowing a first precursor over a substrate; removing a first precursor effluent comprising the first precursor; flowing a second precursor over the substrate to react with the first precursor to form the polymeric film on the substrate; and removing a second precursor effluent comprising the second precursor. The methods may include performing a metal deposition process. The methods may include performing a post-treatment process, such as a heat treatment process.

Abstract: Methods of depositing a reflowable polymeric film on a semiconductor substrate are described. Exemplary processing methods may include flowing a first precursor over a semiconductor substrate to form a first portion of polymeric film on the structure. The methods may include removing a first precursor effluent from the semiconductor substrate. A second precursor may then be flowed over the semiconductor substrate to react with the first portion of the polymeric film. The methods may include removing a second precursor effluent from the semiconductor substrate. The methods may include reflowing the polymeric film by exposing the polymeric film to a heat treatment.

Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall to reduce the critical dimension (CD). The carbon-containing film may act as an etch protection layer for the sidewall of the nanostructures. When no etch is performed, the carbon-containing film may act as a liner material.

Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metal after use of a flowable polymer to protect a substrate surface within a feature. A first metal layer is deposited by physical vapor deposition (PVD). The semiconductor substrate surface is exposed to one or more monomers to form a flowable and flexible polymer film on the first metal layer within the at least one feature. The flowable polymer film forms on the first metal layer on the bottom. The one or more monomers are selected from one or more of amines with bi-functional groups, aldehydes with bi-functional groups, cyanates with bi-functional groups, ketones with bi-functional groups, and alcohols with bi-functional groups. At least a portion of the first metal layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed.

Abstract: Methods of depositing high-quality conformal silicon oxide (SiOx) films in the formation of semiconductor devices are described. The methods include exposing a semiconductor substrate to a first precursor, a first purge gas, a second precursor, a second purge gas, and a remote plasma source (RPS) microwave plasma to deposit a conformal silicon oxide (SiOx) film.

Abstract: Methods of depositing high-quality conformal silicon oxycarbonitride (SiOCN) films in the formation of semiconductor devices are described. The methods include a first deposition cycle comprising exposing a semiconductor substrate in a semiconductor processing chamber to a first precursor, a first purge gas, a second precursor, and a second purge gas to deposit a conformal silicon carbonitride (SiCN) film, wherein the first precursor is a silicon- and carbon-containing precursor, and the second precursor comprises one or more of ammonia (NH3), a diamine (NH2—R—NH2 wherein R is an alkyl group), hydrazine (N2H4), and diazene (N2H2). The conformal silicon carbonitride (SiCN) film is then oxidized to form a conformal silicon oxycarbonitride (SiOCN) film, and the conformal silicon oxycarbonitride (SiOCN) film is thermally annealed to form a high-quality conformal silicon oxycarbonitride (SiOCN) film.

Abstract: Methods of depositing silicon-containing layers in the formation of semiconductor devices are described. The methods include a thermal chemical vapor deposition (CVD) process or a thermal atomic layer deposition (ALD) process without the use of plasma. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, and an initiator compound to deposit a silicon oxide layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, a nitrogen-containing reactant, and an initiator compound to deposit a silicon nitride layer. Some methods include exposing a semiconductor substrate to a silicon-containing precursor, an oxygen-containing reactant, a nitrogen-containing reactant, and an initiator compound to deposit a silicon oxynitride layer.

Abstract: Embodiments of the disclosure relate to methods using an oligomer film to protect a substrate surface. The oligomer film is formed on the substrate surface with a first feature and a second feature each having a feature depth. The first feature has a first critical dimension (CD) and the second feature has a second CD. The semiconductor substrate surface is exposed to one or more monomers to form the oligomer film, and the oligomer film forms selectively on the bottom and fills a portion of the feature depth. The oligomer film fills the feature depth to substantially the same or the same height in each of the first feature and the second feature. Methods of forming semiconductor devices using the oligomer film are also disclosed.

Abstract: Embodiments of the disclosure relate to methods of selectively depositing a metal after use of a flowable polymer to protect a substrate surface within a feature. A first metal layer is deposited by physical vapor deposition (PVD). The semiconductor substrate surface is exposed to one or more monomers to form a flowable and flexible polymer film on the first metal layer within the at least one feature. The flowable polymer film forms on the first metal layer on the bottom. The one or more monomers are selected from one or more of amines with bi-functional groups, aldehydes with bi-functional groups, cyanates with bi-functional groups, ketones with bi-functional groups, and alcohols with bi-functional groups. At least a portion of the first metal layer is selectively removed from the top surface and the at least one sidewall. The flowable polymer film is removed.

Abstract: A method of filling a feature in a semiconductor structure with metal includes depositing a metal cap layer on a bottom surface of a feature formed within a dielectric layer and top surfaces of the dielectric layer, partially filling the feature from the bottom surface with a flowable polymer layer, performing a metal pullback process to remove the metal cap layer on the top surfaces of the dielectric layer selectively to the dielectric layer, wherein the metal pullback process includes a first etch process including a chemical etch process using molybdenum hexafluoride (MoF6) to remove the metal cap layer selectively to the dielectric layer, and a second etch process to remove residues on etched surfaces of the dielectric layer, removing the flowable polymer layer, pre-cleaning a surface of the metal cap layer, and filling the feature from the surface of the metal cap layer with metal fill material.

Abstract: Molecular layer deposition (MLD) is used to provide conformal and uniform doping technology for HAR and reentrant structures. MLD is used to deposit a conformal carbon-based film that contains a doping element. Thermal annealing is then used to make the doping element diffuse into the semiconductor material. For HAR structures, a conformal layer is used with low temperature doping, precise control, and the carbon-based film can be easily removed during doping or after doping. The amount of doping can be controlled by changing the thickness of MLD carbon-based film.

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

Abstract: Methods of selectively depositing a selectively deposited layer are described. Exemplary processing methods may include treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone, hydrogen peroxide, or a hydrogen plasma to passivate the second surface. In one or more embodiments, a selectively deposited layer is then selectively deposited on the non-hydroxyl-containing surface and not on the second surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the non-hydroxyl-containing surface and not on the second surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial selectively deposited layer. The methods may include removing a second precursor effluent from the substrate.

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

Abstract: Embodiments of the present technology relate to semiconductor processing methods that include providing a structured semiconductor substrate including a trench having a bottom surface and top surfaces. The methods further include depositing a portion of a silicon-containing material on the bottom surface of the trench for at least one deposition cycle, where each deposition cycle includes: depositing the portion of the silicon-containing material on the bottom surface and top surfaces of the trench, depositing a carbon-containing mask layer on the silicon-containing material on the bottom surface of the trench, where the carbon-containing mask layer is not formed on the top surfaces of the trench, removing the portion of the silicon-containing material from the top surfaces of the trench, and removing the carbon-containing mask layer from the silicon-containing material on the bottom surface of the trench, where the as-deposited silicon-containing material remains on the bottom surface of the trench.

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include treating a substrate comprising a carbon-containing surface and a silicon-containing surface with one or more of ozone or hydrogen peroxide to passivate the silicon-containing surface. In one or more embodiments, a carbon-containing layer is then selectively deposited on the carbon-containing surface and not on the silicon-containing surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the carbon-containing surface and not on the silicon-containing surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate.