Abstract: Embodiments of the present disclosure relate to method, device and computer program product for data backup. The method comprises: in response to receiving from a backup server a data stream to be backed up, dividing the data stream into a plurality of data segments; distributing the plurality of data segments to at least one computing node; in response to receiving an index of a corresponding data segment from a first computing node of the at least one computing node, looking up the index in a global index cache, the index being generated by the first computing node to uniquely identify the data segment, the global index cache storing indexes of data in a backup storage device; in response to the missing index in the global index cache, adding the index into the global index cache; and sending to the first computing node an indication to store the data segment in the backup storage device.

Abstract: Systems, methods and media of optimization of temporary read errors (TRE) in three-dimensional (3D) NAND memory devices are disclosed. A disclosed memory device can comprises a plurality of memory cells arranged as an array of NAND memory strings, a plurality of word lines couple to the memory cells, and a controller. The controller is configured to determine whether a next read operation is a first read operation of the memory device after recovering from an idle state, and In response to a positive result of the determination, control the memory device to perform an extended pre-phase of the first read operation before a read-phase of the first read operation.

Abstract: The present invention discloses a method for constructing and optimizing a molecular structure model of lignite, comprising: collecting and processing a lignite sample, analyzing a lignite experimental sample, calculating the number of carbon atoms in lignite and the number of carbon atoms in other parameters, obtaining the sizes of aromatic clusters, and determining the composition features and number of aromatic structural units in lignite; calculating the total number of carbon atoms and the number of aliphatic carbon atoms in lignite; obtaining the categories and number of oxygen-containing functional groups in lignite based on the contents of aromatic hydrocarbon, aliphatic hydrocarbon and various oxygen-containing functional groups, and designing the structural forms of nitrogen and sulfur; constructing a molecular structure model of lignite.

Abstract: A memory device includes a memory array including memory strings, each memory string comprising a plurality of first memory cells, a plurality of second memory cells, and one or more dummy memory cells between the first memory cells and the second memory cells. The first memory cells are between drain terminals of the memory strings and the dummy memory cells, and the second memory cells are between source terminals of the memory strings and the dummy memory cells. The bit lines are respectively coupled to drain terminals of the memory strings. The word lines are respectively coupled to gate terminals of the first memory cells and the second memory cells. A word line driver is configured to apply a first voltage signal to each of the word lines that are coupled to the gate terminals of the first memory cells during a pre-charge phase.

Abstract: A memory device includes a memory array including memory strings. Each memory string includes a plurality of top memory cells, a plurality of bottom memory cells, and one or more dummy memory cells between the top memory cells and the bottom memory cells. The memory device also includes a plurality of word lines respectively coupled to gate terminals of the top memory cells and the bottom memory cells. The memory device further includes a control circuit configured to provide a control signal to control programming a target memory cell of the top memory cells. The gate terminal of the target memory cell are coupled to a selected word line of the word lines.

Abstract: A memory device includes a memory array including memory strings. Each memory string includes a plurality of top memory cells, a plurality of bottom memory cells, and one or more dummy memory cells between the top memory cells and the bottom memory cells. The memory device also includes a plurality of word lines respectively coupled to gate terminals of the top memory cells and the bottom memory cells. The memory device further includes a control circuit configured to provide a control signal to control programming a target memory cell of the top memory cells. The gate terminal of the target memory cell are coupled to a selected word line of the word lines.

Abstract: A method of performing a programming operation to a three dimensional (3D) NAND memory device is disclosed. The method makes residual electrons trapped in storage regions of middle dummy memory cells of an unselected string of the 3D NAND memory device to be removed during the pre-charging phase, so as to reduce program disturb to an selected string which neighbors the unselected string.

Abstract: A method of performing a programming operation to a three dimensional (3D) NAND memory device is disclosed. The method makes residual electrons trapped in storage regions of middle dummy memory cells of the unselected string of the 3D NAND memory device to be removed during the pre-charging phase, so as to reduce program disturb to the selected string which neighbors the unselected string.