Patents by Inventor Xinliang Lu
Xinliang Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11791181Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.Type: GrantFiled: September 18, 2020Date of Patent: October 17, 2023Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Ting Xie, Hua Chung, Haochen Li, Xinliang Lu, Shawming Ma, Haichun Yang, Michael X. Yang
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Patent number: 11626269Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.Type: GrantFiled: March 15, 2021Date of Patent: April 11, 2023Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Qi Zhang, Xinliang Lu, Hua Chung
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Patent number: 11495456Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.Type: GrantFiled: October 1, 2019Date of Patent: November 8, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD, MATTSON TECHNOLOGY, INInventors: Ting Xie, Xinliang Lu, Hua Chung, Michael X. Yang
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Patent number: 11495437Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.Type: GrantFiled: May 20, 2020Date of Patent: November 8, 2022Assignees: BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY, CO., LTD, MATTSON TECHNOLOGY, INC.Inventors: Ting Xie, Xinliang Lu, Hua Chung, Michael X. Yang
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Patent number: 11387111Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.Type: GrantFiled: April 10, 2019Date of Patent: July 12, 2022Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology, Co., LTDInventors: Michael X. Yang, Hua Chung, Xinliang Lu
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Publication number: 20220172989Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.Type: ApplicationFiled: February 15, 2022Publication date: June 2, 2022Applicant: Applied Materials, Inc.Inventors: Yihong Chen, Kelvin Chan, Xinliang Lu, Srinivas Gandikota, Yong Wu, Susmit Singha Roy, Chia Cheng Chin
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Patent number: 11289374Abstract: Processing methods comprise forming a gap fill layer comprising tungsten or molybdenum by exposing a substrate surface having at least one feature thereon sequentially to a metal precursor and a reducing agent comprising hydrogen to form the gap fill layer in the feature, wherein there is not a nucleation layer between the substrate surface and the gap fill layer.Type: GrantFiled: November 29, 2017Date of Patent: March 29, 2022Assignee: APPLIED MATERIALS, INC.Inventors: Yihong Chen, Kelvin Chan, Xinliang Lu, Srinivas Gandikota, Yong Wu, Susmit Singha Roy, Chia Cheng Chin
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Publication number: 20220059321Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.Type: ApplicationFiled: November 1, 2021Publication date: February 24, 2022Inventors: Qi Zhang, Xinliang Lu, Hua Chung, Michael X. Yang
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Patent number: 11257680Abstract: Methods for processing a workpiece with fluorine radicals are provided. In one example implementation, the method includes a workpiece having at least one silicon layer and at least one silicon germanium layer. The method can include placing the workpiece on a workpiece support in a processing chamber. The method can include generating one or more species from a process gas in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can include exposing the workpiece to the filtered mixture to remove at least a portion of the at least one silicon layer.Type: GrantFiled: August 25, 2020Date of Patent: February 22, 2022Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventors: Qi Zhang, Xinliang Lu
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Patent number: 11251050Abstract: Systems and methods for processing a workpiece are provided. In one example, a method includes exposing the workpiece to a first gas mixture when the workpiece is at a first temperature to conduct a doped silicate glass etch process. The first gas mixture can include hydrofluoric acid (HF) vapor. The doped silicate glass etch process at least partially removes the doped silicate glass layer at a first etch rate that is greater than a second etch rate associated with removal of the at least one second layer. The method can include heating the workpiece to a second temperature. The second temperature is greater than the first temperature. The method can include exposing the workpiece to a second gas mixture when the workpiece is at a second temperature to remove a residue from the workpiece.Type: GrantFiled: June 18, 2020Date of Patent: February 15, 2022Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventors: Qi Zhang, Xinliang Lu, Hua Chung, Haichun Yang
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Publication number: 20210391185Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.Type: ApplicationFiled: August 27, 2021Publication date: December 16, 2021Inventors: Qi Zhang, Xinliang Lu, Hua Chung
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Patent number: 11164742Abstract: Processes for selective deposition of material on a workpiece are provided. In one example, the method includes placing a workpiece on a workpiece support in a processing chamber. The workpiece has a first material and a second material. The second material is different from the first material. The method includes performing an organic radical based surface treatment process on the workpiece to modify an adsorption characteristic of the first material selectively relative to the second material such that the first material has a first adsorption characteristic and the second material has a second adsorption characteristic. The second adsorption characteristic being different from the first adsorption characteristic. The method includes performing a deposition process on the workpiece such that a material is selectively deposited on the first material relative to the second material.Type: GrantFiled: April 29, 2020Date of Patent: November 2, 2021Assignees: Beijing E-Town Semiconductor Technology Co., Ltd., Mattson Technology, Inc.Inventors: Michael X. Yang, Hua Chung, Xinliang Lu
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Patent number: 11164725Abstract: Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.Type: GrantFiled: May 23, 2019Date of Patent: November 2, 2021Assignees: Beijing E-Town Semiconductor Technology Co., Ltd., Mattson Technology, Inc.Inventors: Qi Zhang, Xinliang Lu, Hua Chung, Michael X. Yang
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Patent number: 11164727Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.Type: GrantFiled: July 14, 2020Date of Patent: November 2, 2021Assignees: Beijing E-Town Semiconductor Technology Co., Ltd., Mattson Technology, Inc.Inventors: Ting Xie, Hua Chung, Bin Dong, Xinliang Lu, Haichun Yang, Michael X. Yang
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Publication number: 20210307151Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.Type: ApplicationFiled: June 14, 2021Publication date: September 30, 2021Inventors: Shuang Meng, Xinliang Lu, Shawming Ma, Hua Chung
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Patent number: 11107695Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a fluorine and oxygen plasma-based process can be used to smooth a roughened surface of a silicon and/or a silicon containing structure. The process can include generating species from a process gas using an inductive coupling element in a first chamber. The process can include introducing a fluorine containing gas and an oxygen containing gas with the species to create a mixture. The process can further include exposing the silicon and/or the silicon containing structure to the mixture such that the mixture at least partially etches a roughened portion to leave a smoother surface of the silicon and/or the silicon containing structure.Type: GrantFiled: December 18, 2019Date of Patent: August 31, 2021Assignees: Beijing E-Town Semiconductor Technology Co., Ltd., Mattson Technology, Inc.Inventors: Qi Zhang, Xinliang Lu, Hua Chung
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Patent number: 11062910Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include performing an organic radical based surface treatment process on a workpiece. The organic radical based surface treatment process can include generating one or more species in a first chamber. The surface treatment process can include mixing one or more hydrocarbon molecules with the species to create a mixture. The mixture can include one or more organic radicals. The surface treatment process can include exposing a semiconductor material on the workpiece to the mixture in a second chamber.Type: GrantFiled: June 18, 2019Date of Patent: July 13, 2021Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventors: Michael X. Yang, Hua Chung, Xinliang Lu
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Publication number: 20210202214Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.Type: ApplicationFiled: March 15, 2021Publication date: July 1, 2021Inventors: Qi Zhang, Xinliang Lu, Hua Chung
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Patent number: 11043393Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.Type: GrantFiled: January 16, 2020Date of Patent: June 22, 2021Assignees: Mattson Technology, Inc., Beijing E-Town Semiconductor Technology Co., Ltd.Inventors: Shanyu Wang, Ting Xie, Chun Yan, Xinliang Lu, Hua Chung, Michael X. Yang
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Patent number: 11039527Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.Type: GrantFiled: January 28, 2019Date of Patent: June 15, 2021Assignees: MATTSON TECHNOLOGY, INC., BEIJING E-TOWN SEMICONDUCTOR TECHNOLOGY CO., LTD.Inventors: Shuang Meng, Xinliang Lu, Shawming Ma, Hua Chung