Patents by Inventor Xinling Xu

Xinling Xu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240156195
    Abstract: The present application provides a comfortable lightweight bullet-proof and stab-resistant suit and a preparation method thereof. A first aspect of the present application provides a comfortable lightweight bullet-proof and stab-resistant suit, including a sheath and a protection core sheet disposed in the sheath, and the protection core sheet includes a first protection layer, a second protection layer, a third protection layer and a buffer layer which are sequentially stacked together. The bullet-proof and stab-resistant suit provided in the present application has better response protection characteristics in the process of bullet penetration or knife tip stab, and the prepared aramid unidirectional cloth has low areal density, apparent flatness, no bubbles, and excellent softness, so that any bending within 180° can be realized.
    Type: Application
    Filed: April 25, 2023
    Publication date: May 16, 2024
    Inventors: Xinling FANG, Yuankun LIU, Dongmei XU, Qingsong AI, Hongxin LI, Hong CHEN, Zhaoyang LIU, Zhiyong PAN, Zhongwei WU, Zongjia LI, Nianhua LI, Liandong JIANG, Ruiling WANG, Long HU, Liqiang FU, Bing ZHANG, Junhong DAI, Fangning XUE
  • Publication number: 20220185680
    Abstract: Provided are a silicene quantum dots-containing siloxene thin film and a preparation method therefor, which belong to the field of fluorescent functional nanomaterials. A siloxene thin film embedded with silicene quantum dots is prepared by uniformly mixing CaSi2 with a decalcification organic solvent and a transition metal chloride catalyst in a proportion, performing acid washing, and then performing ultrasonic dispersion. The thickness of such siloxene thin film is less than 1 to 2.5 nm, the size of the silicene quantum dots is 2 to 5 nm. In addition, the siloxene thin film has strong fluorescence emission performance in a blue light region, has a pseudodirect band gap, and shows a good application prospect in the fields of photoelectricity and the like.
    Type: Application
    Filed: January 22, 2022
    Publication date: June 16, 2022
    Inventors: Jingyun Huang, Xinling Xu, Liping Zhou, Zhizhen Ye