Abstract: A method for manufacturing a semiconductor structure includes: providing a substrate, a first mask and a second mask, etching the substrate by respectively using the first mask and the second mask, so as to form first grooves and second grooves on the substrate, wherein regions, in the substrate, where the first grooves and the second grooves are located form bit line grooves; and forming a conductive layer in each of the bit line grooves.

Abstract: The present application provides a method for manufacturing a semiconductor structure and a semiconductor structure, relating to the field of semiconductor technology. The method for manufacturing a semiconductor structure includes: providing a substrate; forming a metal wiring layer on the substrate, a surface of the metal wiring layer having positive charges; and providing a reaction gas to the metal wiring layer.

Abstract: A method for manufacturing a semiconductor structure, comprising: forming a first mask layer, a first buffer layer, a second mask layer and a second buffer layer sequentially stacked from bottom to top; patterning the second buffer layer and the second mask layer; forming a first mask pattern on a side wall of a first pattern, the first mask pattern extending in a first direction; removing the second buffer layer and the second mask layer; forming a third mask layer, a third buffer layer, a fourth mask layer and a fourth buffer layer sequentially stacked form bottom to top; patterning the fourth buffer layer and the fourth mask layer; forming a second mask pattern on a side wall of a second pattern, the second mask pattern extending in a second direction; removing the fourth buffer layer and the fourth mask layer.

Abstract: A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method for manufacturing a semiconductor structure includes: forming a conductive layer, a protective layer, and a mask layer in sequence on the substrate, the mask layer including a first pattern facing the first region and a second pattern facing the second region; forming a restriction pattern located in the second region by etching the protective layer using the mask layer as a mask; and forming contact pads located in the first region and connecting wires located in the second region on the conductive layer by etching the conductive layer using the mask layer as a mask.

Abstract: A semiconductor structure manufacturing method includes: forming a first pattern transfer layer on a conductive layer; forming a first mask layer having a plurality of first hole-shaped patterns disposed at intervals on the first pattern transfer layer, and etching the first pattern transfer layer by using the first mask layer as a mask to form first holes; and forming a second pattern transfer layer. The first holes are formed on the first pattern transfer layer. While forming the second pattern transfer layer by spin-on hardmask, there is a smaller amount of the second pattern transfer layer filling the first holes and a larger amount of the second pattern transfer layer located on the first pattern transfer layer.

Abstract: Embodiments of the present application relate to a semiconductor structure and a formation method thereof. The semiconductor structure formation method includes the following steps: providing a base, the base including a memory region, the memory region including a substrate, a conductive layer, and a first mask layer located on the conductive layer; patterning the first mask layer to form a plurality of first dot patterns arranged in a first array; backfilling the first mask layer to form a second mask layer covering the first mask layer; patterning the second mask layer to form a plurality of second dot patterns arranged in a second array; and etching the conductive layer by using the first dot pattern and the second dot pattern together as a mask pattern to form a plurality of independent conductive dot patterns.

Abstract: The present application relates to the technical field of manufacturing semiconductor, and in particular to a method of manufacturing semiconductor structure and a semiconductor structure. The method of manufacturing semiconductor structure includes: forming a conductive layer on a substrate, and removing part of the conductive layer to form a contact structure composed of a plurality of contact pads; where each of the contact pads is electrically connected to a transistor structure on the substrate; and, after the contact pads are formed, removing residual core on top ends of the contact pads away from the substrate by dry etching.