Abstract: The invention provides an optical fingerprint sensor including: an image sensing layer having an array composed of a plurality of sensing blocks; a collimating layer disposed on the image sensing layer and having a plurality of through holes penetrating from the top surface to the bottom surface of the collimating layer; a light guiding layer disposed in the collimating layer, and a glass cover layer disposed on the light guiding layer, the top surface of the glass cover layer receiving a finger touch, wherein the image resolution of the optical fingerprint sensor is defined by the number of sensing blocks, and there are a plurality of through holes directly above each of the sensing blocks.

Abstract: An active pixel sensor is provided. The active pixel sensor includes a substrate comprising sub-arrays arranged to form a sensing array. For each sub-array, pixel areas are disposed on pixel rows of the sub-array. Each sub-array includes a plurality of sensing circuits and a plurality of output circuits. For each sub-array, the sensing circuits are disposed in the pixel areas on the pixel rows excluding a specific pixel row among the pixel rows. For each sub-array, the sensing circuits are further disposed on pixel columns of the sub-array to form an array, and each sensing circuit includes a sensing element, a transfer transistor, and a floating diffusion node. For each sub-array, the output circuits are disposed in the pixel areas on the specific pixel row. The sensing circuits on the same pixel column are coupled to the same output circuit.

Abstract: An active pixel sensor is provided. The active pixel sensor includes a substrate, a plurality of sensing circuits, and a plurality of output circuits. The substrate is divided into a plurality of pixel rows. A plurality of pixel areas are disposed on the plurality of pixel rows. The plurality of sensing circuits are disposed in the pixel areas on the pixel rows excluding a specific pixel row among the plurality of pixel rows. The plurality of sensing circuits are further disposed on a plurality of pixel columns to form an array. Each of the plurality of sensing circuits includes a sensing element, a transfer transistor, and a floating diffusion node. The plurality of output circuits are disposed in the pixel areas on the specific pixel row. The sensing circuits on the same pixel column are coupled to the same output circuit.

Abstract: An active pixel sensor is provided. The active pixel sensor includes a substrate, a plurality of sensing circuits, and a plurality of output circuits. The substrate is divided into a plurality of pixel rows. A plurality of pixel areas are disposed on the plurality of pixel rows. The plurality of sensing circuits are disposed in the pixel areas on the pixel rows excluding a specific pixel row among the plurality of pixel rows. The plurality of sensing circuits are further disposed on a plurality of pixel columns to form an array. Each of the plurality of sensing circuits includes a sensing element, a transfer transistor, and a floating diffusion node. The plurality of output circuits are disposed in the pixel areas on the specific pixel row. The sensing circuits on the same pixel column are coupled to the same output circuit.

Abstract: The invention provides an optical fingerprint sensor including: an image sensing layer having an array composed of a plurality of sensing blocks; a collimating layer disposed on the image sensing layer and having a plurality of through holes penetrating from the top surface to the bottom surface of the collimating layer; a light guiding layer disposed in the collimating layer, and a glass cover layer disposed on the light guiding layer, the top surface of the glass cover layer receiving a finger touch, wherein the image resolution of the optical fingerprint sensor is defined by the number of sensing blocks, and there are a plurality of through holes directly above each of the sensing blocks.

Abstract: An active pixel sensor comprising: a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, and the plurality of pixels have at least one floating diffusion region; and a plurality of processing circuits associated with the plurality of pixels; wherein each processing circuit comprises a charge amplifier.

Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, wherein the plurality of pixels include at least one reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of a reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die. The plurality of processing and amplification circuits each comprises a source follower transistor, wherein the source follower transistor uses a PMOS.

Abstract: An active pixel sensor comprising: a plurality of pixels, wherein each pixel includes a light sensitive element and a transfer gate, and the plurality of pixels have at least one floating diffusion region; and a plurality of processing circuits associated with the plurality of pixels; wherein each processing circuit comprises a charge amplifier.

Abstract: An active pixel sensor comprises a sensor die and a circuit die. The sensor die comprises a plurality of pixels. Each pixel includes a light sensitive element and a transfer gate, a floating diffusion region, and a reset gate. The circuit die comprises a plurality of processing and amplification circuits associated with the reset gates of the sensor die. The sensor die is interconnected with the circuit die utilizing a plurality of inter-die interconnects each coupled to a source node of the reset gate on the sensor die and a node of a processing and amplification circuit on the circuit die.

Abstract: A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.

Abstract: A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.

Abstract: A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.

Abstract: A high dynamic range CMOS image sensor is disclosed. The pixels of the image sensor incorporate in-pixel memory. Further, the pixels may have varying integration periods. The integration periods are determined, in part, by the signal stored in the in-pixel memory from previous integration periods.

Abstract: Embodiments of the present invention are directed to a plurality of light sensor cells disposed in a substrate in a shared pixel arrangement. Common readout circuitry is used to simultaneously read out image information from a group of light sensor cells. The image information from the group of light sensor cells is added together simultaneously and coupled to auto-focus circuitry and/or preview circuitry to provide for better lens adjustments and preview display.

Abstract: Embodiments of the present invention are directed to a plurality of light sensor cells disposed in a substrate in a shared pixel arrangement. Common readout circuitry is used to simultaneously read out image information from a group of light sensor cells. The image information from the group of light sensor cells is added together simultaneously and coupled to auto-focus circuitry and/or preview circuitry to provide for better lens adjustments and preview display.

Abstract: A system and method for applying a layer of material in the image sensor fabrication process in order to increase the absorption of specific range light spectrum by the image sensor is described. The mechanism adopted is by converting light rays from higher energy range (shorter wavelength) to lower energy range (longer wavelength) such that the light absorption by the image sensor can be increased.

Abstract: Disclosed are embodiments of an apparatus comprising an image sensor comprising a pixel array including a plurality of pixels, a detection circuit coupled to the pixel array to detect potential white/black pixel defects in the pixel array, a correction circuit coupled to the detection circuit to correct potential white/black pixel defects detected by the detection circuit. The apparatus further comprises a digital signal processor coupled to the image sensor, the digital signal processor comprising a memory to have therein a list of defective pixels in the pixel array, and a processor coupled to the memory to cross-check each pixel against the list of defective pixels and correct the digital value of each pixel found in the list of defective pixels. Other embodiments are disclosed and claimed.

Abstract: A camera solution includes an image sensor and an image processing and control system. At least two different operating modes are supported, with one of the modes having a higher dynamic range. Control of the dynamic range is provided at the system level. The system supports statically or dynamically selecting an operating mode that determines the dynamic range of a camera. In one implementation, the system supports the use of either a conventional image sensor that does not natively support a high dynamic range or a dual-mode image sensor.

Abstract: An improved active pixel sensor soft reset circuit for reducing image lag while maintaining low reset kTC noise. The circuit pulls down the sensor potential to a sufficiently low level before the soft reset function is completed. The level to which the sensor potential is pulled is set between 0 and the critical potential at which the reset transistor will be on when the soft reset function begins. The timing of the pull down function is such that the sensor is stabilized at the low potential before the soft reset function completes. In one embodiment, the sensor potential is pulled down using a pull-down circuit, which may consist of a CMOS type inverter. In another embodiment, the sensor potential is pulled down by the bit line. Two ways in which the bit line may be pulled down are natural discharge, or by increasing the bias on the loading transistor. Two ways in which the bias on the loading transistor may be increased are a biasing circuit, or by using a pull-down transistor.

Abstract: A CMOS image sensor having blooming reduction mechanisms is disclosed. The image sensor can include a plurality of pixels arranged in rows and a timing and control circuit in electrical communication with the plurality of pixels. The timing and control circuit includes a readout module configured for outputting a first row of pixels exposed for a first exposure period, outputting a second row of pixels exposed for the first exposure period after outputting the first row of pixels, and thereafter outputting a third row of pixels exposed for a second exposure period different than the first exposure period, the third row of pixels being between the first and second rows of pixels.