Abstract: The present disclosure provides a method for preparing a gallium nitride (GaN) single-crystal substrate with an edge metal mask technology. The method includes: preparing a metal mask ring on a composite epitaxial substrate, epitaxially growing a GaN single-crystal sacrificial layer in a confined manner, performing separation with interlayer decoupling of single-crystal graphene through an in-situ temperature gradient method to obtain a self-supporting GaN single-crystal sacrificial layer, epitaxially growing a GaN single-crystal thick film in a diameter expanded manner, and performing chemico-mechanical trimming on the GaN single-crystal thick film to obtain a stress-free self-supporting GaN single-crystal substrate. The metal mask ring is compatible with the GaN single-crystal preparation process (hydride vapor phase epitaxy (HVPE)), and efficiently catalyzes decomposition reaction of the nitrogen source.

Abstract: Disclosed is a method for monolithic integration preparation of a full-color nitride semiconductor micro light-emitting diode (micro-LED) array.

Abstract: Disclosed is a method for monolithic integration preparation of a full-color nitride semiconductor micro light-emitting diode (micro-LED) array.

Abstract: Disclosed is a method for preparing a nitride light emitting diode (LED) and nondestructive interface separation. A two-dimensional atomic crystal layer on a transparent substrate is modified by using an atomic irradiation technology, to obtain an irradiated region; a nitride LED structure is prepared on a modified two-dimensional atomic crystal layer, and a support substrate is cured by means of a metal functional layer; visible laser is incident from a back surface of the transparent substrate to directionally destruct the irradiated region of the two-dimensional atomic crystal layer, so as to obtain a whole structure of the nitride LED structure, the metal functional layer and the support substrate that are separated from the transparent substrate. The present disclosure can nondestructively separate the interface and repeatedly use the transparent substrate.

Abstract: The present invention relates to a method of preparing an oxide high entropy ceramic fiber; the oxide high entropy ceramic fiber of the present invention comprises five elements among Zr, Hf, Ti, Ce, Y, La, Gd, Er, Sm; the salt or precursor corresponding to the selected element is used as a metal source, anhydrous ethanol or anhydrous methanol is used as a solvent, polyvinylpyrrolidone or polyethylene oxide is used as a spinning aid to configure a spinning solution, the precursor fibers are prepared by electrostatic spinning, and the precursor fibers are heat-treated in air to obtain the oxide high-entropy ceramic fibers; the oxide high entropy ceramic fiber prepared by the present invention has a uniform diameter and good flexibility.

Abstract: Disclosed is a method for preparing a nitride light emitting diode (LED) and nondestructive interface separation. A two-dimensional atomic crystal layer on a transparent substrate is modified by using an atomic irradiation technology, to obtain an irradiated region; a nitride LED structure is prepared on a modified two-dimensional atomic crystal layer, and a support substrate is cured by means of a metal functional layer; visible laser is incident from a back surface of the transparent substrate to directionally destruct the irradiated region of the two-dimensional atomic crystal layer, so as to obtain a whole structure of the nitride LED structure, the metal functional layer and the support substrate that are separated from the transparent substrate. The present disclosure can nondestructively separate the interface and repeatedly use the transparent substrate.

Abstract: The present disclosure discloses a preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer. The preparation method of the present disclosure includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method of the present disclosure has low difficulty and is suitable for large-scale industrial production.

Abstract: An electronic device, a semiconductor device, a packaging structure, a bracket and a method for manufacturing the bracket, belonging to the field of semiconductor device packaging. The bracket includes a first frame and a second frame placed opposite to each other and connected through an electroplating layer. In the above, the first frame and the second frame are both ceramic-based and formed with a metal layer on a surface. The bracket has a longer service life.

Abstract: An electronic device, a semiconductor device, a packaging structure, a bracket and a method for manufacturing the bracket, belonging to the field of semiconductor device packaging. The bracket includes a first frame and a second frame placed opposite to each other and connected through an electroplating layer. In the above, the first frame and the second frame are both ceramic-based and formed with a metal layer on a surface. The bracket has a longer service life.