Abstract: The present disclosure discloses a preparation method of an aluminum nitride (AlN) composite structure based on a two-dimensional (2D) crystal transition layer. The preparation method of the present disclosure includes: transferring the 2D crystal transition layer on a first periodic groove of an epitaxial substrate; forming a second periodic groove staggered with the first periodic groove on the 2D crystal transition layer; depositing a supporting protective layer; depositing a functional layer of a required AlN-based material; and removing the 2D crystal transition layer through thermal oxidation to obtain a semi-suspended AlN composite structure. The preparation method of the present disclosure has low difficulty and is suitable for large-scale industrial production.

Abstract: An electronic device, a semiconductor device, a packaging structure, a bracket and a method for manufacturing the bracket, belonging to the field of semiconductor device packaging. The bracket includes a first frame and a second frame placed opposite to each other and connected through an electroplating layer. In the above, the first frame and the second frame are both ceramic-based and formed with a metal layer on a surface. The bracket has a longer service life.

Abstract: An electronic device, a semiconductor device, a packaging structure, a bracket and a method for manufacturing the bracket, belonging to the field of semiconductor device packaging. The bracket includes a first frame and a second frame placed opposite to each other and connected through an electroplating layer. In the above, the first frame and the second frame are both ceramic-based and formed with a metal layer on a surface. The bracket has a longer service life.