Patents by Inventor Xinqiang Yang
Xinqiang Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240021741Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.Type: ApplicationFiled: September 29, 2023Publication date: January 18, 2024Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
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Patent number: 11837671Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.Type: GrantFiled: February 17, 2023Date of Patent: December 5, 2023Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
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Publication number: 20230317866Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.Type: ApplicationFiled: June 7, 2023Publication date: October 5, 2023Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
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Patent number: 11777045Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.Type: GrantFiled: December 3, 2021Date of Patent: October 3, 2023Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Kaifu Qiu, Yongqian Wang, Xinqiang Yang, Gang Chen
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Patent number: 11764316Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately on the back surface of the silicon substrate; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions. One of the plurality of first conductive regions and the plurality of second conductive regions is disposed inside the plurality of recesses, respectively, and the other one is disposed outside the plurality of recesses; each first conductive region includes a first dielectric layer and a first doped region which are disposed successively, and each second conductive region includes a second doped region.Type: GrantFiled: December 2, 2021Date of Patent: September 19, 2023Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Kaifu Qiu, Yongqian Wang, Xinqiang Yang, Gang Chen
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Patent number: 11749761Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.Type: GrantFiled: October 24, 2021Date of Patent: September 5, 2023Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
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Patent number: 11728442Abstract: A back contact solar cell string includes: at least two cell pieces, where each cell piece comprises positive electrode regions and negative electrode regions alternately disposed with each other; insulation layers, covering the positive electrode regions on one side of the cell piece and the negative electrode regions on another side of the cell piece; and a first bus bar, connected to two adjacent cell pieces and electrically connected to the positive electrode regions and the negative electrode regions in the two adjacent cell pieces that are not covered by the insulation layers.Type: GrantFiled: November 15, 2021Date of Patent: August 15, 2023Assignees: ZHEJIANG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., ZHUHAI FUSHAN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., TIANJIN AIKO SOLAR ENERGY TECHNOLOGY CO., LTD., GUANGDONG AIKO SOLAR ENERGY TECHNOLOGY CO., LTD.Inventors: Wei Dai, Xinqiang Yang, Gang Chen
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Patent number: 11695087Abstract: A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.Type: GrantFiled: December 3, 2021Date of Patent: July 4, 2023Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Kaifu Qiu, Yongqian Wang, Xinqiang Yang, Gang Chen
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Patent number: 11688816Abstract: The disclosure provides an electrode structure of a back contact cell, a back contact cell, a back contact cell module, and a back contact cell system. The electrode structure includes: first fingers, configured to collect a first polarity region; second fingers, configured to collect a second polarity region; a first busbar, disposed on a side of the back contact cell close to a first edge and connected to the first fingers; first pad points; and first connection electrodes, respectively connected to the first busbar and the first pad points. A distance between each of the first pad points and the first edge is greater than a distance between the first busbar and the first edge. The electrode structure can improve the reliability, reduce the costs, increase the product yield, and ensure excellent photoelectric conversion efficiency.Type: GrantFiled: January 10, 2023Date of Patent: June 27, 2023Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Yongqian Wang, Xinqiang Yang, Gang Chen
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Publication number: 20230197865Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.Type: ApplicationFiled: February 17, 2023Publication date: June 22, 2023Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
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Patent number: 11588060Abstract: The disclosure provides an electrode structure of a back contact cell, a back contact cell, a back contact cell module, and a back contact cell system. The electrode structure includes: first fingers, configured to collect a first polarity region; second fingers, configured to collect a second polarity region; a first busbar, disposed on a side of the back contact cell close to a first edge and connected to the first fingers; first pad points; and first connection electrodes, respectively connected to the first busbar and the first pad points. A distance between each of the first pad points and the first edge is greater than a distance between the first busbar and the first edge. The electrode structure can improve the reliability, reduce the costs, increase the product yield, and ensure excellent photoelectric conversion efficiency.Type: GrantFiled: May 13, 2022Date of Patent: February 21, 2023Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Yongqian Wang, Xinqiang Yang, Gang Chen
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Publication number: 20230027636Abstract: The disclosure relates to the technical field of solar cells, and provides a solar cell and a doped region structure thereof, a cell assembly, and a photovoltaic system. The doped region structure includes a first doped layer, a passivation layer, and a second doped layer that are disposed on a silicon substrate in sequence. The passivation layer is a porous structure having the first doped layer and/or the second doped layer inlaid in a hole region. The first doped layer and the second doped layer have a same doping polarity. By means of the doped region structure of the solar cell provided in the disclosure, the difficulty in production and the limitation on conversion efficiency as a result of precise requirements for the accuracy of a thickness of a conventional tunneling layer are resolved.Type: ApplicationFiled: October 24, 2021Publication date: January 26, 2023Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
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Publication number: 20230027079Abstract: The disclosure provides a solar cell and a back contact structure thereof, a photovoltaic module, and a photovoltaic system. The back contact structure includes a first doped region having an opposite polarity to a silicon substrate and a second doped region having a same polarity as the silicon substrate. An isolation region is arranged between the first doped region and the second doped region. The protective region arranged on the first doped region includes an insulation layer and a third doped layer having a same polarity as the second doped region. An opening is provided in the protective region to connect the first conductive layer to the first doped region. In the present invention, scratches caused by belt transmission in an existing cell fabrication process is resolved.Type: ApplicationFiled: July 11, 2022Publication date: January 26, 2023Inventors: Gang CHEN, Wenli XU, Kaifu QIU, Yongqian WANG, Xinqiang YANG
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Publication number: 20230021066Abstract: A back contact solar cell string includes: at least two cell pieces, where each cell piece comprises positive electrode regions and negative electrode regions alternately disposed with each other; insulation layers, covering the positive electrode regions on one side of the cell piece and the negative electrode regions on another side of the cell piece; and a first bus bar, connected to two adjacent cell pieces and electrically connected to the positive electrode regions and the negative electrode regions in the two adjacent cell pieces that are not covered by the insulation layers.Type: ApplicationFiled: November 15, 2021Publication date: January 19, 2023Inventors: Wei DAI, Xinqiang YANG, Gang CHEN
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Publication number: 20220393043Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately on the back surface of the silicon substrate; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions. One of the plurality of first conductive regions and the plurality of second conductive regions is disposed inside the plurality of recesses, respectively, and the other one is disposed outside the plurality of recesses; each first conductive region includes a first dielectric layer and a first doped region which are disposed successively, and each second conductive region includes a second doped region.Type: ApplicationFiled: December 2, 2021Publication date: December 8, 2022Inventors: Kaifu QIU, Yongqian WANG, Xinqiang YANG, Gang CHEN
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Publication number: 20220393052Abstract: A back contact structure includes: a silicon substrate including a back surface including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate; a plurality of first doped regions disposed on the first dielectric layer and disposed inside the plurality of recesses; a plurality of second doped regions disposed on the first dielectric layer and disposed outside the plurality of recesses; a second dielectric layer disposed between the first doped regions and the second doped regions; and a conductive layer disposed on the first plurality of doped regions and the plurality of second doped regions.Type: ApplicationFiled: December 3, 2021Publication date: December 8, 2022Inventors: Kaifu QIU, Yongqian WANG, Xinqiang YANG, Gang CHEN
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Publication number: 20220393044Abstract: A back contact structure of a solar cell, includes: a silicon substrate, the silicon substrate including a back surface including a plurality of recesses disposed at intervals; a plurality of first conductive regions and a plurality of second conductive regions disposed alternately in the plurality of recesses, where each first conductive region includes a first dielectric layer and a first doped region which are disposed successively in the plurality of recesses, and each second conductive region includes a second doped region; a second dielectric layer disposed between the plurality of first conductive regions and the plurality of second conductive regions; and a conductive layer disposed on the plurality of first conductive regions and the plurality of second conductive regions.Type: ApplicationFiled: December 3, 2021Publication date: December 8, 2022Inventors: Kaifu QIU, Yongqian WANG, Xinqiang YANG, Gang CHEN
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Patent number: 11489080Abstract: The disclosure provides a passivated contact structure and a solar cell including the same, a cell assembly and a photovoltaic system. The passivated contact structure includes a first passivated contact region on a silicon substrate and a second passivated contact region on the first passivated contact region. The second passivated contact region has an opening connecting a conductive layer to the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The first passivation layer is a porous structure inlaid with the first doped layer and/or the second doped layer in a hole region. Utilizing the passivated contact structure provided in this invention, mitigates the serious recombination caused by metal directly contacting with silicon substrate.Type: GrantFiled: October 24, 2021Date of Patent: November 1, 2022Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Gang Chen, Wenli Xu, Kaifu Qiu, Yongqian Wang, Xinqiang Yang
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Patent number: 11450777Abstract: A back contact structure includes: a silicon substrate including a back including a plurality of recesses disposed at intervals; a first dielectric layer disposed on the back surface of the silicon substrate, the first dielectric layer at least covering the plurality of recesses; a plurality of P-type doped regions and N-type doped regions disposed on the first dielectric layer and disposed alternately in the plurality of recesses; a second dielectric layer disposed between the plurality of P-type doped regions and the plurality of N-type doped regions; and a conductive layer disposed on the plurality of P-type doped regions and the plurality of N-type doped regionsType: GrantFiled: December 2, 2021Date of Patent: September 20, 2022Assignee: SOLARLAB AIKO EUROPE GMBHInventors: Kaifu Qiu, Yongqian Wang, Xinqiang Yang, Gang Chen