Abstract: The disclosure relates to a semiconductor structure and a method for forming the same. The semiconductor structure includes: a substrate; a storage array located on the substrate and including a plurality of memory cells arranged in an array along a first direction and a second direction, each memory cell including a transistor structure that includes a gate electrode and an active area that includes a first active area and a second active area distributed on opposite sides of the gate electrode along the first direction; a word line extending along the second direction, being continuously and electrically connected with a plurality of gate electrodes in the memory cells arranged at intervals along the second direction; a bit line extending along the first direction and located on outside of each of the memory cells along the second direction.

Abstract: Embodiments of the present disclosure relate to the field of semiconductor structures, and provide a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base; a plurality of first conductive structures, located on a surface of the base and distributed at intervals along a first direction; a plurality of second conductive structures, located on the surface of the base, and the plurality of second conductive structures and the plurality of first conductive structures being arranged alternately; and a plurality of support structures, located on the surface of the base and a given one of the plurality of support structures being located between a given one of the plurality of first conductive structures and a given one of the plurality of second conductive structures.

Abstract: The present disclosure relates to the cosmetology field, in particular to an activated revitalizing lotion and its preparation method and application. A preparation method of an activated revitalizing lotion comprises the steps of: mixing an isolated blood sample, ozone-oxygen mixture and sodium citrate, and centrifuging the mixed blood sample at 1800-2000 r/min for 9-10 min to obtain a plasma supernatant for use as an activated revitalizing lotion; the ozone-oxygen mixture has an ozone concentration of 42.8-171.4 ?g/L and added in an amount of 2.3-3.2 L/1 L of the isolated blood sample; and sodium citrate is added in an amount of 0.2-0.3 mg/1 L of the isolated blood sample. The activated revitalizing lotion prepared by the preparation method of the present disclosure shows improved effect in repair and revitalization of skin or subcutaneous tissues.

Abstract: A semiconductor structure and a manufacturing method therefor are provided. The semiconductor structure includes: a substrate; a plurality of connection pads disposed on a surface of the substrate; and a plurality of electrode pillars, disposed on the substrate and connected to the plurality of connection pads in a one-to-one correspondence. Each electrode pillar includes a first conductor layer and a second conductor layer that are alternately distributed in a direction perpendicular to the substrate. A material of the first conductor layer is different from a material of the second conductor layer. A side surface of the first conductor layer is recessed inward relative to a side surface of the second conductor layer.

Abstract: In the method for manufacturing a semiconductor structure, a film structure is formed on a substrate, a pattern transfer layer is formed on the film structure, a plurality of holes are defined on the pattern transfer layer, and the pattern transfer layer is flattened; the film structure is etched through the holes to form capacitor holes in the film structure.

Abstract: Embodiments provide a semiconductor structure and a fabricating method. The semiconductor structure includes: a substrate, where a trench is formed in the substrate; a conductive layer positioned in the trench, where the conductive layer includes a first conductive layer and a second conductive layer, the second conductive layer is positioned on the first conductive layer, and a projection area of a bottom of the second conductive layer within the trench is greater than a projection area of a top of the first conductive layer within the trench; a dielectric layer positioned between the conductive layer and an inner wall of the trench, where a top of the dielectric layer is lower than the top of the first conductive layer; an isolation layer positioned on the conductive layer; and a void defined by the isolation layer, the conductive layer, the dielectric layer, and a side wall of the trench.

Abstract: This invention provides a tofu with long shelf life and preparation method thereof, comprising soaking soybean to make soy milk, filtering to remove bean dregs, boiling, primary cooling, homogenizing, deaerating, UHT sterilization, secondary cooling, inline mixing soy milk with sterilized composite coagulant, aseptic filling, microwave heating, solidification, cooling for formation. According to this invention, a composite coagulant is prepared by combining basic salts with coagulant, then, the composite coagulant is inline mixed with soy milk, next, the mixture is intermittently heated by microwave to form tofu. The invention solves the problems existed in the preparation of tofu with long shelf life, including short temporary storage time, easy tube pasting and other issues after the coagulant is mixed with soy milk. This invention has the advantages of causing no corrosion on pipes, and taking less time in the heating and solidification process, etc.

Abstract: A preparation method includes 1) dispersing cellulose nanocrystal in water and adjusting pH to 7; 2) adding carboxylate to the aqueous dispersion of the step 1), and stirring until uniform; and 3) adding a monomer and a ceric ammonium nitrate initiator to the system of the step 2), reacting for 0.5-3 h to obtain a precipitate, and subjecting the precipitate to suction filtration, washing, and drying to obtain the cellulose nanocrystal powder. By adding a small amount of carboxylate into a cellulose nanocrystal graft polymer modification system initiated by ceric ammonium nitrate, hydrolysis of cerium ions can be inhibited through complexation of the carboxylate to the cerium ions which play an initiating role in ceric ammonium nitrate, so that ceric ammonium nitrate can initiate the polymerization reaction under acid-free conditions, thereby achieving polymerization of polyvinyl acetate monomer on the surface of cellulose nanocrystals.

Abstract: A method for forming a capacitor via includes: providing a to-be-processed wafer, the to-be-processed wafer including a substrate and a first dielectric layer and a first mask layer that are sequentially formed on a surface of the substrate; etching the first mask layer according to a compensated first etching parameter, to form a first patterned layer extending in a first etching direction; sequentially forming a second dielectric layer and a second mask layer on a surface of the first patterned layer; etching the second mask layer and the second dielectric layer according to a compensated second etching parameter, to form a second patterned layer extending in a second etching direction; and etching the first dielectric layer with the first patterned layer and the second patterned layer together as a capacitor pattern, to form a capacitor via.

Abstract: The present disclosure relates to the cosmetology field, in particular to an activated revitalizing lotion and its preparation method and application. A preparation method of an activated revitalizing lotion comprises the steps of: mixing an isolated blood sample, ozone-oxygen mixture and sodium citrate, and centrifuging the mixed blood sample at 1800-2000 r/min for 9-10 min to obtain a plasma supernatant for use as an activated revitalizing lotion; the ozone-oxygen mixture has an ozone concentration of 42.8-171.4 ?g/L and added in an amount of 2.3-3.2 L/1 L of the isolated blood sample; and sodium citrate is added in an amount of 0.2-0.3 mg/1 L of the isolated blood sample. The activated revitalizing lotion prepared by the preparation method of the present disclosure shows improved effect in repair and revitalization of skin or subcutaneous tissues.

Abstract: Embodiments of the present disclosure provide a method for obtaining parameters of a semiconductor structure, a method for obtaining a detection standard and a detection method. The method for obtaining parameters of a semiconductor structure includes: obtaining a semiconductor structure, the semiconductor structure including a substrate and a capacitor support structure on the substrate, the capacitor support structure having a plurality of capacitor holes therein, the capacitor holes penetrating the capacitor support structure in a thickness direction of the capacitor support structure; removing some height of the capacitor support structure; obtaining a test pattern, the test pattern being a pattern exposed at a top of the remaining capacitor support structure; and in the test pattern, obtaining a spacing between the capacitor holes at predetermined positions on the basis of a predetermined direction.

Abstract: A method for predicting an inclination angle of an etched hole can include operations as follows. A preset change range of an etching rate of an etching device for an object to be etched on a surface of a monitored sample in different operation stages is determined. An etching rate change curve of the etching device for the object to be etched on the surface of a monitored sample in a current operation stage is acquired. When the etching rate change curve exceeds the preset change range, it is determined that an inclination angle of an etched hole of an etched product currently etched by the etching device exceeds a preset angle.

Abstract: Embodiments of the present application provide a process monitoring method and a process monitoring system. The process monitoring method includes: acquiring a semiconductor structure on which an etch process is performed in an etch chamber, and forming a corresponding test structure based on the semiconductor structure; acquiring first theoretical mass of the test structure after the etch process is theoretically performed; placing the test structure in the etch chamber to actually perform the etch process, and acquiring first residual mass of the test structure after the etch process is actually performed; and determining, based on the first theoretical mass and the first residual mass, whether an etch state of the etch process performed in the etch chamber is normal.

Abstract: The present disclosure provides a semiconductor device and a method for manufacturing the same, and relates to the field of semiconductor technologies. The manufacturing method includes: providing a substrate and forming a film layer stack structure thereon; etching the film layer stack structure to form a first region containing a through hole through which the substrate is exposed and a second region containing a hole section through which the substrate is not exposed; and patterning and etching the second region to remove the film layer stack structure within the second region.

Abstract: The present invention is directed to isolated nucleic acids encoding Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of the amyloid precursor protein (APP) relative to wild-type Mint proteins. The present invention is further directed toward purified Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of APP relative to wild-type Mint proteins. The present invention also encompasses methods of modulating transcriptional activation and methods of identifying compounds that modulate transcriptional activation, and vectors, as well as transfected cells and kits useful for modulating transcriptional activation or for the identification of compounds that can modulate transcriptional activation. The present invention further encompasses transgenic knockout mice with little or no expression of Mint 1, Mint 2 or Mint 3 proteins.

Abstract: The present invention is directed to isolated nucleic acids encoding Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of the amyloid precursor protein (APP) relative to wild-type Mint proteins. The present invention is further directed toward purified Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of APP relative to wild-type Mint proteins. The present invention also encompasses methods of modulating transcriptional activation and methods of identifying compounds that modulate transcriptional activation, and vectors, as well as transfected cells and kits useful for modulating transcriptional activation or for the identification of compounds that can modulate transcriptional activation. The present invention further encompasses transgenic knockout mice with little or no expression of Mint 1, Mint 2 or Mint 3 proteins.

Abstract: The present invention is directed to isolated nucleic acids encoding Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of the amyloid precursor protein (APP) relative to wild-type Mint proteins. The present invention is further directed toward purified Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of APP relative to wild-type Mint proteins. The present invention also encompasses methods of modulating transcriptional activation and methods of identifying compounds that modulate transcriptional activation, and vectors, as well as transfected cells and kits useful for modulating transcriptional activation or for the identification of compounds that can modulate transcriptional activation. The present invention further encompasses transgenic knockout mice with little or no expression of Mint 1, Mint 2 or Mint 3 proteins.

Abstract: The present invention is directed to isolated nucleic acids encoding Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of the amyloid precursor protein (APP) relative to wild-type Mint proteins. The present invention is further directed toward purified Mint protein variants having enhanced abilities to modulate the transcriptional activation mediated by the cytoplasmic tail of APP relative to wild-type Mint proteins. The present invention also encompasses methods of modulating transcriptional activation and methods of identifying compounds that modulate transcriptional activation, and vectors, as well as transfected cells and kits useful for modulating transcriptional activation or for the identification of compounds that can modulate transcriptional activation. The present invention further encompasses transgenic knockout mice with little or no expression of Mint 1, Mint 2 or Mint 3 proteins.