Abstract: A system and method of a tilt-column electron beam imaging system is disclosed. The system may include an imaging sub-system. The imaging sub-system may include a plurality of electron beam sources configured to generate a plurality of beamlets. The imaging sub-system may further include a plurality of tilt-illumination columns, where a respective tilt-illumination column is configured to receive a respective beamlet from a respective electron beam source. For the system and method, a first tilt axis of a first tilt-illumination column may be orientated along a first angle and at least one additional tilt axis of at least one additional tilt-illumination column may be orientated along at least one additional angle different from the first angle, where each of the plurality of beamlets pass through a first common crossover volume.

Abstract: A system and method of an electron multi-beam imaging system is disclosed. The system may include an imaging sub-system. The imaging sub-system may include one or more electron beam sources configured to generate a plurality of beamlets to simultaneously probe a plurality of measurement regions on a sample. The imaging sub-system may further include one or more electron optics configured to adjust the plurality of beamlets. The imaging sub-system may further include a detector array, where the detector array includes a plurality of detectors configured to detect electrons emanating from a measurement region of the sample. For the system and method, each detector may include a pass-through channel configured for receiving a beamlet of the plurality of beamlets.

Abstract: A system and method of a tilt-column electron beam imaging system is disclosed. The system may include an imaging sub-system. The imaging sub-system may include a plurality of electron beam sources configured to generate a plurality of beamlets. The imaging sub-system may further include a plurality of tilt-illumination columns, where a respective tilt-illumination column is configured to receive a respective beamlet from a respective electron beam source. For the system and method, a first tilt axis of a first tilt-illumination column may be orientated along a first angle and at least one additional tilt axis of at least one additional tilt-illumination column may be orientated along at least one additional angle different from the first angle, where each of the plurality of beam lets pass through a first common crossover volume.

Abstract: A multi-electron beam system that forms hundreds of beamlets can focus the beamlets, reduce Coulomb interaction effects, and improve resolutions of the beamlets. A Wien filter with electrostatic and magnetic deflection fields can separate the secondary electron beams from the 5 primary electron beams and can correct the astigmatism and source energy dispersion blurs for all the beamlets simultaneously.

Abstract: Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

Abstract: An electron-beam device includes a laser and a photocathode film. The photocathode film has a front side and a back side and emits a plurality of electron beamlets when illuminated from the back side using the laser. The electron-beam device also includes electrodes to extract the plurality of electron beamlets from the front side of the photocathode film and to control shapes of the plurality of electron beamlets.

Abstract: An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.

Abstract: An electron-beam device includes upper-column electron optics and lower-column electron optics. The upper-column electron optics include an aperture array to divide an electron beam into a plurality of electron beamlets. The upper-column electron optics also include a lens array with a plurality of lenses to adjust the focus of the plurality of electron beamlets. Respective lenses of the plurality of lenses are to adjust the focus of respective electron beamlets of the plurality of electron beamlets. The upper-column electron optics further include a first global lens to adjust the focus of the plurality of electron beamlets in a manner opposite to the lens array.

Abstract: For an electron beam system, a Wien filter is in the path of the electron beam between a transfer lens and a stage. The system includes a ground electrode between the Wien filter and the stage, a charge control plate between the ground electrode and the stage, and an acceleration electrode between the ground electrode and the charge control plate. The system can be magnetic or electrostatic.

Abstract: An electron source emits an electron beam. The electron beam is received by a beam limiting assembly. The beam limiting assembly has a first beam limiting aperture with a first diameter and a second beam limiting aperture with a second diameter larger than the first diameter. The first beam limiting aperture receives the electron beam. This beam limiting assembly reduces the influence of Coulomb interactions.

Abstract: Multiple electron beamlets are split from a single electron beam. The electron beam passes through an acceleration tube, a beam-limiting aperture, an anode disposed between an electron beam source and the acceleration tube, a focusing lens downstream from the beam-limiting aperture, and a micro aperture array downstream from the acceleration tube. The micro aperture array generates beamlets from the electron beam. The electron beam can be focused from a divergent illumination beam into a telecentric illumination beam.

Abstract: An electron source emits an electron beam. The electron beam is received by a beam limiting assembly. The beam limiting assembly has a first beam limiting aperture with a first diameter and a second beam limiting aperture with a second diameter larger than the first diameter. The first beam limiting aperture receives the electron beam. This beam limiting assembly reduces the influence of Coulomb interactions.

Abstract: An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

Abstract: An electron source is disclosed. The electron source may include an electron emitter configured to generate one or more electron beams. The electron source may further include a magnetic suppressor electrode surrounding at least a portion of the electron emitter. The magnetic suppressor electrode may be formed from one or more magnetic materials. The magnetic suppressor may be configured to shield at least a portion of the electron emitter from an axial magnetic field. The electron source may further include an extractor electrode positioned adjacent to a tip of the electron emitter.

Abstract: An electron beam system for wafer inspection and review of 3D devices provides a depth of focus up to 20 microns. To inspect and review wafer surfaces or sub-micron-below surface defects with low landing energies in hundreds to thousands of electron Volts, a Wien-filter-free beam splitting optics with three magnetic deflectors can be used with an energy-boosting upper Wehnelt electrode to reduce spherical and chromatic aberration coefficients of the objective lens.

Abstract: A system is disclosed. In embodiments, the system includes an electron source and a micro-lens array (MLA) configured to receive one or more primary electron beams from the electron source and split the one or more primary electron beams into a plurality of primary electron beamlets. In embodiments, the system further includes a micro-stigmator array (MSA) including a plurality of dodecapole electrostatic stigmators, wherein the MSA is configured to eliminate at least one of fourth-order focusing aberrations or sixth-order focusing aberrations of the plurality of primary electron beamlets. In embodiments, the system further includes projection optics configured to receive the plurality of primary electron beamlets and focus the plurality of primary electron beamlets onto a surface of a sample.

Abstract: A high-resolution electron energy analyzer is disclosed. In one embodiment, the electron energy analyzer includes an electrostatic lens configured to generate an energy-analyzing field region, decelerate electrons of an electron beam generated by an electron source, and direct the decelerated electrons of the electron beam to the energy-analyzing field region. In another embodiment, the electron energy analyzer includes an electron detector configured to receive one or more electrons passed through the energy-analyzing field region. In another embodiment, the electron detector is further configured to generate one or more signals based on the one or more received electrons.

Abstract: An electron-optical system for inspecting or reviewing an edge portion of a sample includes an electron beam source configured to generate one or more electron beams, a sample stage configured to secure the sample and an electron-optical column including a set of electron-optical elements configured to direct at least a portion of the one or more electron beams onto an edge portion of the sample. The system also includes a sample position reference device disposed about the sample and a guard ring device disposed between the edge of the sample and the sample position reference device to compensate for one or more fringe fields. One or more characteristics of the guard ring device are adjustable. The system also includes a detector assembly configured to detect electrons emanating from the surface of the sample.

Abstract: An optical characterization system utilizing a micro-lens array (MLA) is provided. The system may include an electron source and a MLA including a micro-deflection array (MDA). The MDA may include an insulator substrate and a plurality of hexapole electrostatic deflectors disposed on the insulator substrate. The MDA may further include a plurality of voltage connecting lines configured to electrically couple the plurality of hexapole electrostatic deflectors to one or more voltage sources. The MDA may be configured to split a primary electron beam from the electron source into a plurality of primary electron beamlets. The system may be configured to focus the plurality of primary electron beamlets at a wafer plane.

Abstract: A scanning electron microscopy system may include an electron-optical sub-system and a controller. The electron-optical sub-system may include an electron source and an electron-optical column configured to direct an electron beam to a sample. The electron-optical column may include a double-lens assembly, a beam limiting aperture disposed between a first and second lens of the double-lens assembly, and a detector assembly configured to detect electrons scattered from the sample. In embodiments, the controller of the scanning electron microscopy system may be configured to: cause the electron-optical sub-system to form a flooding electron beam and perform flooding scans of the sample with the flooding electron beam; cause the electron-optical sub-system to form an imaging electron beam and perform imaging scans of the sample with the imaging electron beam; receive images acquired by the detector assembly during the imaging scans; and determine characteristics of the sample based on the images.