Abstract: A semiconductor package structure includes a first substrate including first conductive pads, one or more semiconductor chips stacking on the first substrate, a second substrate on the semiconductor chips opposite to the first substrate, a molding compound on the first substrate and encapsulating the semiconductor chips and at least part of the second substrate, and a first metal wire located in the molding compound and connecting the second substrate to the semiconductor chips. The first conductive pads are on a side of the first substrate opposite to the semiconductor chips.

Abstract: A semiconductor package structure includes a substrate, including first conductive pads and packaging pads opposite to the first conductive pads, one or more semiconductor chips stacking on the substrate, a molding compound encapsulating the semiconductor chips, first metal wires connecting the semiconductor chips to the packaging pads, a first metal pad on a side of the molding compound opposite to the substrate, and a second metal wire located in the molding compound and connecting the first metal pad to a chip-contact pad of a semiconductor chip of the semiconductor chips.

Abstract: The present disclosure includes a semiconductor package including a redistribution layer (RDL) having a first surface in contact with input/output (I/O) contacts and a second surface opposite to the first surface. The semiconductor package also includes a staircase interconnect structure formed on the second surface of the RDL and electrically connected with the RDL. The staircase interconnect structure includes staircase layers including a first staircase layer and a second staircase layer stacked on a top surface of the first staircase layer. The second staircase layer covers a portion of the top surface of the first staircase layer such that a remaining portion of the top surface of the first staircase layer is exposed. Integrated circuit (IC) chips are electrically connected to the RDL via the staircase interconnect structure. A first IC chip of the IC chips is electrically connected to the RDL.

Abstract: The present disclosure includes a semiconductor package including a redistribution layer (RDL) having a first surface in contact with input/output (I/O) contacts and a second surface opposite to the first surface. The semiconductor package also includes a staircase interconnect structure formed on the second surface of the RDL and electrically connected with the RDL. The staircase interconnect structure includes staircase layers including a first staircase layer and a second staircase layer stacked on a top surface of the first staircase layer. The second staircase layer covers a portion of the top surface of the first staircase layer such that a remaining portion of the top surface of the first staircase layer is exposed. Integrated circuit (IC) chips are electrically connected to the RDL via the staircase interconnect structure. A first IC chip of the IC chips is electrically connected to the RDL.

Abstract: The present disclosure includes a semiconductor package including a redistribution layer (RDL) having a first surface in contact with input/output (I/O) contacts and a second surface opposite to the first surface. The semiconductor package also includes a staircase interconnect structure formed on the second surface of the RDL and electrically connected with the RDL. The staircase interconnect structure includes staircase layers including a first staircase layer and a second staircase layer stacked on a top surface of the first staircase layer. The second staircase layer covers a portion of the top surface of the first staircase layer such that a remaining portion of the top surface of the first staircase layer is exposed. Integrated circuit (IC) chips are electrically connected to the RDL via the staircase interconnect structure. A first IC chip of the IC chips is electrically connected to the RDL through the remaining portion of the top surface of the first staircase layer.

Abstract: The present disclosure relates to a tape removing device and a tape removing method. The present disclosure provides a tape removing device comprising: a working table; a suction nozzle; a workpiece for tape removing, the workpiece for tape removing including a support adhesive layer and at least one workpiece bonded to a side of the support adhesive layer, in which one side of the support adhesive layer provided with the at least one workpiece is facing the working table; and a guiding roll in contact with the other side of the support adhesive layer, wherein the suction nozzle fixes the workpiece for tape removing on the working table. Therefore, it is possible to avoid stripping off the support adhesive layer from the workpiece at a right angle, thereby reducing damages to the workpiece, which in turn can reduce the risk of invisible product cracks and improve product reliability.

Abstract: A chip package structure includes multiple chips stacked together, a molding layer encapsulating the multiple chips, a conductive layer is on a side of the molding layer away from the multiple chips, and a vertical conductive element extending from a surface of the molding layer to the bonding pad. Each of the multiple chips includes a bonding pad not covered by the multiple chips. The vertical conductive element connects the conductive layer and the bonding pad. The vertical conductive element includes gold.

Abstract: The present disclosure provides a semiconductor package structure, a fabrication method, and a memory system. The semiconductor package structure includes a plurality of package bodies stacked in a first direction. At least one of the plurality of package bodies includes first interconnect structures extending in the first direction and a plurality of sub package bodies stacked in the first direction. Each of the plurality of sub package bodies includes a molding body and a device structure encapsulated in the molding body. The device structure includes a passive device. The passive device includes at least one of a resistor, a capacitor, and an inductor.

Abstract: The present application provides an integrated package device, a method of fabricating an integrated package device, and a memory system. The integrated package device may include at least one package module. Each package module may include a first sub-package module with a first electronic devices. Each package module may include a second sub-package module including a second electronic devices. Each package module may include a first re-distribution layer connected with first pads. Each package module may include a second re-distribution layer connected with second pads.

Abstract: The present disclosure provides a semiconductor device, a fabricating method thereof, a memory device and a memory system. The disclosed semiconductor device comprises a first device, a dicing street adjoining the first device laterally, a metal structure located in the dicing street, and a stealth cleavage lane extending in the dicing street.

Abstract: The present application provides chip package structures and manufacturing methods thereof. In one example, the chip package structure includes: a base board including a grounding pad; a chip assembly located at a first surface of the base board; a package body covering the chip assembly, wherein a side wall of the package body is located in an extension direction of a side wall of the base board, and the side wall of the package body and the first surface of the base board have an acute included angle therebetween; and a shielding layer covering the side walls of the package body and the base board and electrically connected with the grounding pad.

Abstract: A memory system package structure and a manufacturing method thereof are disclosed. For example, the memory system package structure can include a memory chip, a memory controller and a distribution layer. The memory chip can include a first surface. The memory controller can be positioned on the first surface. The redistribution layer can be positioned on a side of the memory controller facing away from the memory chip. The memory chip and the memory controller can be electrically connected with the redistribution layer.

Abstract: A semiconductor package structure includes a substrate, including first conductive pads and packaging pads opposite to the first conductive pads, one or more semiconductor chips stacking on the substrate, a molding compound encapsulating the semiconductor chips, first metal wires connecting the semiconductor chips to the packaging pads, a first metal pad on a side of the molding compound opposite to the substrate, and a second metal wire located in the molding compound and connecting the first metal pad to a chip-contact pad of a semiconductor chip of the semiconductor chips.

Abstract: A chip package structure includes multiple chips stacked together, a molding layer encapsulating the multiple chips, a conductive layer is on a side of the molding layer away from the multiple chips, and a vertical conductive element extending from a surface of the molding layer to the bonding pad. Each of the multiple chips includes a bonding pad not covered by the multiple chips. The vertical conductive element connects the conductive layer and the bonding pad. The vertical conductive element includes gold.

Abstract: A method for fabricating a substrate structure for packaging includes providing a core substrate, a plurality of conductive pads at a first surface of the core substrate, and a metal layer at a second surface of the core substrate opposite to the first surface; forming a conductive structure, for pasting the substrate structure onto an external component, on each of the plurality of conductive pads; forming a molding compound on the first surface of the core substrate and to encapsulate the conductive structure; and forming a plurality of packaging pads by patterning the metal layer at the second surface of the core substrate.

Abstract: A packaging method includes providing a substrate structure, including a core substrate, a plurality of first conductive pads at a first surface of the core substrate, and a plurality of packaging pads at a second surface of the core substrate; and packaging a plurality of semiconductor chips onto the substrate structure at the second surface of the core substrate, including forming a first metal wire to connect with a chip-contact pad of a semiconductor chip, and forming a molding compound on the second surface of the core substrate to encapsulate the plurality of semiconductor chips. One end of the first metal wire connects to the chip-contact pad, and another end of the first metal wire is exposed at the surface of the molding compound. The packaging method further includes forming a first metal pad on the surface of the molding compound to electrically connect with the first metal wire.

Abstract: A method for fabricating a substrate structure for packaging includes providing a core substrate, a plurality of conductive pads at a first surface of the core substrate, and a metal layer at a second surface of the core substrate opposite to the first surface; forming a conductive structure, for pasting the substrate structure onto an external component, on each of the plurality of conductive pads; forming a molding compound on the first surface of the core substrate and to encapsulate the conductive structure; and forming a plurality of packaging pads by patterning the metal layer at the second surface of the core substrate.

Abstract: The present disclosure provides a memory system packaging structure and fabrication methods. The memory system packaging structure includes memory modules, a memory controller, a redistribution layer electrically connected to the memory controller, a plastic encapsulation layer encapsulating the memory modules and the memory controller, and one or more connecting pillars extending in the vertical direction and configured for providing electric power to the memory modules. Each memory module includes memory dies stacked in a vertical direction. Each connecting pillar includes a first portion being in physical contact with one of the memory dies and a second portion being in physical contact with the redistribution layer.

Abstract: A chip package structure includes a chip stack and a redistribution layer. The chip stack includes multiple chips stacked together, a molding layer encapsulating the multiple chips, and a vertical conductive element extending from a surface of the molding layer reach and coupled to the bonding pad. Each of the multiple chips includes a bonding pad not covered by the multiple chips. The redistribution layer is above the molding layer and includes a conductive layer coupled to the vertical conductive element, and an insulating layer over and partially exposing the conductive layer.

Abstract: A packaging method includes providing a substrate structure, including a core substrate, a plurality of first conductive pads at a first surface of the core substrate, and a plurality of packaging pads at a second surface of the core substrate; and packaging a plurality of semiconductor chips onto the substrate structure at the second surface of the core substrate, including forming a first metal wire to connect with a chip-contact pad of a semiconductor chip, and forming a molding compound on the second surface of the core substrate to encapsulate the plurality of semiconductor chips. One end of the first metal wire connects to the chip-contact pad, and another end of the first metal wire is exposed at the surface of the molding compound. The packaging method further includes forming a first metal pad on the surface of the molding compound to electrically connect with the first metal wire.