Abstract: An intelligent thermoelectric-battery integrated structure, which belongs to the field of new energy device, is provided. The structure intelligently controls the temperature of the single cells inside the battery pack by means of direct contact, so as to reduce the temperature and cut off the occurrence of thermal runaway from the root cause. In addition, the Seebeck voltage generated based on the temperature difference can directly store energy inside the battery when charging, and can increase the overall output voltage when discharging. The advantage of this structure solves the contradiction between the difficulty of achieving high energy density and high safety performance for traditional batteries at the same time, and provides a practical solution for the development and utilization of a new generation of high-performance batteries.

Abstract: A method for preparing a supercapacitor electrode material Ni doped CoP3/Ni foam is provided, and the CoP3 is applied to the supercapacitor for the first time. The method belongs to a technical field of synthesis and preparation of supercapacitor materials. The present invention adopts a low-temperature phosphating process to prepare the Ni-doped CoP3/foamed nickel as the electrode material of the supercapacitor, so as to provide advantages such as simple synthesis process, easy control, low cost and high specific capacity. The supercapacitor electrode material Ni doped CoP3/Ni foam prepared by the present invention has a hierarchical structure and a large specific surface area, which is beneficial to shorten an ion transmission path, reduce an interface resistance between the electrode material and electrolyte, provide more active sites, and provide a higher specific capacity in alkaline electrolyte. The electrode material shows great potential in electrochemical energy storage.

Abstract: A low-temperature high-performance thermoelectric material possesses a chemical formula of (AgyCu2?y)1?xTe1?zSez, wherein ?0.025?x?0.075, 0.6?y?1.4, 0<z?0.25, diffraction peaks of a main phase of the thermoelectric material are indexed as a cubic structure at room temperature of 300 K, a highest ZT value between 300 K and 673 K is in range of 0.4 to 1.6, an average ZT value (ZT)avg is in range of 0.2 to 1.4. The highest ZT value of this material at the room temperature is comparable to that of Bi2Te3, which is an excellent complement to existing low-temperature thermoelectric materials. At the same time, the present invention also indicates a new strategy to improve the low-temperature thermoelectric performance of Cu2X-based (here, X is S, Se, Te) materials, and lays a foundation for the application of Cu2X-based materials in the field of low-temperature thermoelectricity.

Abstract: A method for preparing a supercapacitor electrode material Ni doped CoP3/Ni foam is provided, and the CoP3 is applied to the supercapacitor for the first time. The method belongs to a technical field of synthesis and preparation of supercapacitor materials. The present invention adopts a low-temperature phosphating process to prepare the Ni-doped CoP3/foamed nickel as the electrode material of the supercapacitor, so as to provide advantages such as simple synthesis process, easy control, low cost and high specific capacity. The supercapacitor electrode material Ni doped CoP3/Ni foam prepared by the present invention has a hierarchical structure and a large specific surface area, which is beneficial to shorten an ion transmission path, reduce an interface resistance between the electrode material and electrolyte, provide more active sites, and provide a higher specific capacity in alkaline electrolyte. The electrode material shows great potential in electrochemical energy storage.

Abstract: A low-temperature high-performance thermoelectric material possesses a chemical formula of (AgyCu2?y)1?xTe1?zSez, wherein ?0.025?x?0.075, 0.6?y?1.4, 0<z?0.25, diffraction peaks of a main phase of the thermoelectric material are indexed as a cubic structure at room temperature of 300 K, a highest ZT value between 300 K and 673 K is in range of 0.4 to 1.6, an average ZT value (ZT)avg is in range of 0.2 to 1.4. The highest ZT value of this material at the room temperature is comparable to that of Bi2Te3, which is an excellent complement to existing low-temperature thermoelectric materials. At the same time, the present invention also indicates a new strategy to improve the low-temperature thermoelectric performance of Cu2X-based (here, X is S, Se, Te) materials, and lays a foundation for the application of Cu2X-based materials in the field of low-temperature thermoelectricity.