Abstract: A cache allocation method is provided. A core accesses a L3 cache when detecting a miss response from each of a L1 and a L2 cache accessed by the core through sending instruction fetching instructions configured to request L1 and L2 caches to return an instruction and data. The L1 cache is a private cache of the core, the L2 cache is a common cache corresponding to a core set including the core, the L3 cache is a common cache shared by core sets, and the miss response from the L2 cache carries network slice information. A planning unit in the L3 cache allocates the core sets to network slices, configures caches for the network slices according to the network slice information, and sends a hit response to the core. The hit response is configured to return data in a cache of a network slice corresponding to the core set.

Abstract: An embodiment of the present disclosure provides an encapsulant film and a manufacturing method thereof, and a solar cell module and a manufacturing method thereof. the encapsulant film is configured for a solar cell module, the solar cell module includes a plurality of welding strips, the encapsulant film includes a first region, an orthogonal projection of the first region on a surface where the solar cell module is located overlaps at least partially an orthogonal projection of at least one of the plurality of welding strips, and a film thickness of the first region is different from a film thickness of an other region of the encapsulant film. The solar cell module using the encapsulant film can reduce the amount of encapsulant used and fully protect the welding strip.

Abstract: An embodiment of the present disclosure provides a manufacturing method of a solar cell module and a solar cell module. The manufacturing method of a solar cell module includes: providing a solar cell string; fabricating a back plate, a reserved hole being opened in the back plate; providing a front plate; arranging the solar cell string on the front plate; injecting an encapsulant material; and curing the encapsulant material, to obtain the solar cell module. The solar cell module is manufactured by directly curing the injected encapsulant material and no lamination process is performed, which can avoid defects such as hidden cracks of solar cells and breakage of the welding strip caused by the lamination process, which can reduce an amount of the encapsulant material used, reduce a distance between the back plate and the solar cell string and improve the energy conversion efficiency.

Abstract: Embodiments of the present disclosure provide a solar cell module and a manufacturing method thereof. The manufacturing method includes: providing a solar cell string; arranging welding strips on a back surface of the solar cell string; arranging a first encapsulant material on a back surface of the welding strip, to form a first encapsulant material layer; on the back surface of the solar cell string, arranging a second encapsulant material in a local region corresponding to at least one welding strip, to form a second encapsulant material layer; and laminating to form a laminate member. The manufacturing method can reduce the thickness of the encapsulant film on the back surface of the solar cell, and reduce the distance between the back plate material and the solar cell string, and is capable to fully protect the welding strip.

Abstract: A cache allocation method is provided. A core accesses a L3 cache when detecting a miss response from each of a L1 and a L2 cache accessed by the core through sending instruction fetching instructions configured to request L1 and L2 caches to return an instruction and data. The L1 cache is a private cache of the core, the L2 cache is a common cache corresponding to a core set including the core, the L3 cache is a common cache shared by core sets, and the miss response from the L2 cache carries network slice information. A planning unit in the L3 cache allocates the core sets to network slices, configures caches for the network slices according to the network slice information, and sends a hit response to the core. The hit response is configured to return data in a cache of a network slice corresponding to the core set.

Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.

Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.