Patents by Inventor Xinwei Zhao

Xinwei Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250102475
    Abstract: The present invention provides an improved method and system for denoising high-frequency ultrasound based on a multipath matching pursuit algorithm. The method includes: acquiring a high-frequency ultrasound detection signal of a to-be-tested sample; constructing a discrete overcomplete dictionary according to the high-frequency ultrasound detection signal, and training the discrete overcomplete dictionary; reconstructing the high-frequency ultrasound detection signal by using a trained dictionary and using a multipath matching pursuit algorithm, and obtaining a global optimal atom; performing interpolation on the global optimal atom, and constructing a consecutive atomic library; and reconstructing the high-frequency ultrasound detection signal in the consecutive atomic library according to a parameter of the global optimal atom, to complete signal denoising.
    Type: Application
    Filed: April 4, 2024
    Publication date: March 27, 2025
    Inventors: Ke LI, Xuefei MING, Lei SU, Jiefei GU, Xinwei ZHAO
  • Patent number: 6887725
    Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.
    Type: Grant
    Filed: September 23, 2003
    Date of Patent: May 3, 2005
    Assignee: Japan Science and Technology Agency
    Inventors: Shunri Oda, Xinwei Zhao, Katsuhiko Nishiguchi
  • Publication number: 20040055530
    Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.
    Type: Application
    Filed: September 23, 2003
    Publication date: March 25, 2004
    Applicant: JAPAN SCIENCE AND TECHNOLOGY CORPORATION
    Inventors: Shunri Oda, Xinwei Zhao, Katsuhiko Nishiguchi
  • Patent number: 6661021
    Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.
    Type: Grant
    Filed: November 18, 2002
    Date of Patent: December 9, 2003
    Assignee: Japan Science and Technology Corporation
    Inventors: Shunri Oda, Xinwei Zhao, Katsuhiko Nishiguchi
  • Publication number: 20030118064
    Abstract: The invention provides a laser and a method for the production thereof by which it is possible to fabricate a device on a Si substrate, and to fabricate further an optical device such as an optical memory on the Si substrate. The laser has an Er-doped nano-ultrafine crystalline Si waveguide formed on the Si substrate wherein the Er-doped nano-ultrafine crystalline Si layer is co-doped with oxygen to result in a structure in which Er ion is surrounded by at least one or more oxygen atom(s).
    Type: Application
    Filed: December 4, 2002
    Publication date: June 26, 2003
    Applicant: Riken
    Inventors: Xinwei Zhao, Shuji Komuro, Hideo Isshiki, Yoshinobu Aoyagi, Takuo Sugano
  • Publication number: 20030109091
    Abstract: A micro electron gun that is capable of extracting electrons from a semiconductor utilizing a quantum size effect and that can be mounted individually for each of pixels is disclosed, as well as a picture display apparatus using such electron guns which is high in quantum efficiency, of high brightness and thin, as well as methods of manufacture thereof. Conduction electrons from a n-type semiconductor substrate (2) are accelerated under an electric field through a layer or layers (4) of quantum size effect micro particles (3) formed on surfaces of the n-type semiconductor substrate (2) and passed therethrough without undergoing phonon scattering, so that they when arriving at an electrode (5) may possess an amount of energy not less than the work function of the electrode (5) and are thus allowed to spring out into a vacuum.
    Type: Application
    Filed: November 18, 2002
    Publication date: June 12, 2003
    Inventors: Shunri Oda, Xinwei Zhao, Katsuhiko Nishiguchi