Abstract: The present disclosure provides a high-resolution graphene heterojunction based pressure sensor. The present disclosure relates to the technical field of pressure sensor design. The present disclosure uses a graphene/hexagonal boron nitride/graphene (G/h-BN/G) vertical heterojunction thin film as a pressure-sensitive diaphragm. A sensor substrate has a micro-nano arrayed concave cavity structure. Under the action of atmospheric pressure, the G/h-BN/G vertical heterojunction thin film generates localized internal stress, which changes an energy band structure of the vertical heterojunction thin film, and thus changes a tunneling current between the two upper and lower graphene layers, thereby reflecting the external atmospheric pressure changes. The principle of the graphene heterojunction based pressure sensor is based on tunneling effect.

Abstract: A user apparatus includes: a receiver configured to perform predetermined measurement for a resource set in direct communication between terminals, the resource set having a likelihood of being used by another group to which the user apparatus does not belong; a control unit configured to determine, based on a result of the predetermined measurement, whether an effect from said another group having a likelihood of using the resource set is acceptable; and a transmitter configured to use the resource set to perform transmission to another user apparatus when a determination is made that the effect from said another group that uses the resource set is acceptable.

Abstract: Semiconductor processing tool smart window kits, and smart windows for semiconductor processing tools and semiconductor processing tool doors, are discussed herein. Some smart windows may include a smart film with an active area that is electronically controllable between an opaque state and a transparent state, and that may be configured to prevent light from passing through the smart window and entering into a semiconductor processing tool and/or semiconductor processing chamber when in the opaque state. Additional components, configurations, and/or systems of some kits and smart windows are further discussed herein, which may include an electrical contact cover that may be configured to electrically connect the smart film to a power source and a smart film controller that may be configured to cause a smart film to transition between the opaque and transparent states.

Abstract: Semiconductor processing tool smart window kits, and smart windows for semiconductor processing tools and semiconductor processing tool doors, are discussed herein. Some smart windows may include a smart film with an active area that is electronically controllable between an opaque state and a transparent state, and that may be configured to prevent light from passing through the smart window and entering into a semiconductor processing tool and/or semiconductor processing chamber when in the opaque state. Additional components, configurations, and/or systems of some kits and smart windows are further discussed herein, which may include an electrical contact cover that may be configured to electrically connect the smart film to a power source and a smart film controller that may be configured to cause a smart film to transition between the opaque and transparent states.

Abstract: The present invention discloses a gemstone comprising a table, a crown and a pavilion. Certain areas of the surfaces of the gemstone are coated with at least one layer of multi-color thin film comprising at least two (2) types of metallic compounds. A layer of DLC protective coating is deposited on top of the multi-color thin film. The said multi-color thin film can be deposited on the table of the gemstone, the table and crown of the gemstone, on certain areas of the pavilion, or on all surfaces of the gemstone. The deposition of the multi-color thin film can be achieved through several low temperature vapor-coating techniques such as sputtering, chemical vapor deposition (CVD) and physical vapor deposition (PVD), ARC Source deposition, PLD, and MED.