Abstract: A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source, a drain, and a channel region between the source and drain. A source extension region is connected with the source, a drain extension region is connected with the drain, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

Abstract: A trolley case including a case body and a weight monitoring device. The weight monitoring device is mounted on the case body, including a pressure sensor, a transmission unit, and a display module. The pressure sensor is mounted on the case body, and supports the case body when using. When being applied by a pressure, the pressure sensor transmits the pressure to a corresponding electrical signal according to an intension of the pressure. The intension of the electrical signal is corresponding to the intension of the pressure. The transmission unit is electrically connected to the pressure sensor, and transmits the electrical signal into a corresponding weight value. The display module is electrically connected to the transmission unit for display the weight value.

Abstract: A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.

Abstract: A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped regions are formed in the upper surface of an n-type substrate. A trench is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements and electrode elements for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements on the trench side-walls and the previously P-type doped portions on the wafer surface. The trench intersects with insulating elements, so that insulating elements mutually insulate adjacent electrical elements. P-n junctions between the electrical elements and the substrate insulate the electrical elements from the substrate.

Abstract: A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source, a drain, and a channel region between the source and drain. A source extension region is connected with the source, a drain expanded region is connected with the drain, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

Abstract: A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.

Abstract: A method to create piezoresistive sensing elements and electrostatic actuator elements on trench sidewalls is disclosed. P-type doped region(s) 25 are formed in the upper surface of an n-type substrate 20. A trench 22 is formed in the substrate (e.g. by DRIE process) intersecting with the doped regions and defining a portion 21 of the substrate which is movable in the plane of the substrate relative to the rest of the substrate. Then diffusion of P-type dopant into the trench side-walls creates piezoresistive elements 27 and electrode elements 29 for electrostatic actuation. Owing to the intersection of two doped regions, there are good electrical paths between the electrical elements 27, 29 on the trench side-walls and the previously P-typedoped portions 25 on the wafer surface. The trench 22 intersects with insulating elements 28, so that insulating elements 28 mutually insulate adjacent electrical elements 27, 29.