Patents by Inventor Xinxue Wang
Xinxue Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10715942Abstract: A microphone and its manufacturing method are presented. The manufacturing method includes providing a substrate; forming a ring opening extending from an upper surface of the substrate into the substrate; forming a ring separation component by forming a separation material in the ring opening; forming an insulation layer on the substrate; forming a front-end device on the insulation layer; and etching a back side of the substrate using the ring separation component and the insulation layer as an etch-stop layer to form a back-hole.Type: GrantFiled: June 26, 2018Date of Patent: July 14, 2020Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONInventors: Mingjun Wang, Xinxue Wang
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Publication number: 20180376270Abstract: A microphone and its manufacturing method are presented. The manufacturing method includes providing a substrate; forming a ring opening extending from an upper surface of the substrate into the substrate; forming a ring separation component by forming a separation material in the ring opening; forming an insulation layer on the substrate; forming a front-end device on the insulation layer; and etching a back side of the substrate using the ring separation component and the insulation layer as an etch-stop layer to form a back-hole.Type: ApplicationFiled: June 26, 2018Publication date: December 27, 2018Inventors: Mingjun WANG, Xinxue WANG
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Patent number: 10074650Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The semiconductor device also includes a plurality of transistors on the second semiconductor substrate, a deep trench isolation having a bottom at a surface of the first semiconductor substrate in the second region, the deep trench isolation exposing a sidewall of the second semiconductor substrate and a sidewall of the buried insulating layer, and a dielectric capping layer filling the deep trench isolation and covering the plurality of transistors on the second semiconductor substrate.Type: GrantFiled: May 3, 2016Date of Patent: September 11, 2018Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATIONInventors: Herb He Huang, Haiting Li, Xingcheng Jin, Xinxue Wang, Hongbo Zhao, Fucheng Chen, Yanghui Xiang
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Publication number: 20170287908Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.Type: ApplicationFiled: May 3, 2016Publication date: October 5, 2017Inventors: HERB HE HUANG, HAITING LI, XINGCHENG JIN, XINXUE WANG, HONGBO ZHAO, FUCHENG CHEN, YANGHUI XIANG
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Patent number: 9630833Abstract: A method of manufacturing a cantilever structure includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, forming a sacrificial layer in the recess, forming a cantilever structure layer on the semiconductor substrate and the sacrificial layer, performing an etching process to remove a portion of the cantilever structure layer until a surface of the sacrificial layer is exposed to form a cantilever structure and an opening, and removing a portion of the sacrificial layer to form a void below the cantilever structure so that the cantilever structure is suspended in the void. The cantilever structure thus formed has good morphological properties to ensure that the cantilever structure is free of residues at the bottom and has excellent suspension even if the width of the cantilever structure is relatively large.Type: GrantFiled: September 24, 2015Date of Patent: April 25, 2017Assignee: Semiconductore Manufacturing International (Shanghai) CorporationInventors: Liang Ni, Xinxue Wang
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Publication number: 20160247801Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.Type: ApplicationFiled: May 3, 2016Publication date: August 25, 2016Inventors: HERB HE HUANG, HAITING LI, XINGCHENG JIN, XINXUE WANG, HONGBO ZHAO, FUCHENG CHEN, YANGHUI XIANG
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Patent number: 9349748Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.Type: GrantFiled: December 8, 2014Date of Patent: May 24, 2016Assignee: Semiconductor Manufacturing International (Shanghai) CorporationInventors: Herb He Huang, Haiting Li, Xingcheng Jin, Xinxue Wang, Hongbo Zhao, Fucheng Chen, Yanghui Xiang
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Publication number: 20160090292Abstract: A method of manufacturing a cantilever structure includes providing a semiconductor substrate, forming a recess in the semiconductor substrate, forming a sacrificial layer in the recess, forming a cantilever structure layer on the semiconductor substrate and the sacrificial layer, performing an etching process to remove a portion of the cantilever structure layer until a surface of the sacrificial layer is exposed to form a cantilever structure and an opening, and removing a portion of the sacrificial layer to form a void below the cantilever structure so that the cantilever structure is suspended in the void. The cantilever structure thus formed has good morphological properties to ensure that the cantilever structure is free of residues at the bottom and has excellent suspension even if the width of the cantilever structure is relatively large.Type: ApplicationFiled: September 24, 2015Publication date: March 31, 2016Inventors: LIANG NI, XINXUE WANG
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Publication number: 20150187794Abstract: A semiconductor device includes a silicon-on-insulator (SOI) substrate having a stack of a first semiconductor substrate, a buried insulating layer and a second semiconductor substrate formed in a first region and a deep trench isolation disposed in a second region. The method of forming the semiconductor device includes providing a SOI substrate having shallow trench isolations (STIs) and transistors formed within and on the second semiconductor substrate, respectively. The method also includes forming a hard mask over the first region and removing the STIs, the transistors, the second semiconductor substrate and the buried insulating layer in the second region using the hard mask as a mask, and forming a capping layer covering the deep trench isolation and the second semiconductor substrate including the transistors.Type: ApplicationFiled: December 8, 2014Publication date: July 2, 2015Inventors: Herb He Huang, Haiting Li, Xingcheng Jin, Xinxue Wang, Hongbo Zhao, Fucheng Chen, Yanghui Xiang