Abstract: Exemplary methods of semiconductor processing may include providing a silicon-free treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the silicon-free treatment precursor. The contacting may reduce a dielectric constant of the silicon-containing material. Subsequent to contacting the substrate with the silicon-free treatment precursor, a surface of the metal-containing material may be silicon-free.

Abstract: Exemplary methods of semiconductor processing may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. An exposed region of a silicon-containing material and an exposed region of a metal-containing material may be disposed on the substrate. The methods may include contacting the substrate with the treatment precursor. The contacting may increase an amount of methyl groups (—CH3) in the silicon-containing material. The methods may include performing a wet clean to remove a silicon-containing residue from the metal-containing material.

Abstract: A surface recovery process that restores the hydrophobicity of dielectric surfaces and promotes selective deposition of metal-fill such as molybdenum onto metal-containing surfaces while reducing or preventing growth on the dielectric surfaces. Additionally, the surface recovery process reduces film loss against subsequent wet etching processes such as DHF. The recovery precursor soak is performed with optional UV (concurrent or sequential) to react with silanols on damaged dielectric surface to replenish —CH3 and recover hydrophobicity of the dielectric surface. The recovery precursor is a carbon-containing recovery precursor, for example, organohalosilanes, esters, silyl ethers, organoaminosilanes, silyl esters, hydrocarbons, or a combination thereof.

Abstract: Embodiments described herein generally relate to processes for back end of line advanced packaging assembly. More particularly, embodiments described herein relate to processes for activating silicon surfaces for hydrophilic silicon direct bonding applications. In at least one embodiment, a method for activating a substrate is provided. The method includes providing a substrate into a process chamber, the substrate including a plurality of patterned structures, at least one metal layer and a silicon surface, and curing the silicon surface of the substrate. The curing process includes flowing one or more gases into the process chamber, the one or more gases including ozone, and providing UV light while operating the process chamber at a temperature of about 25° C. to about 300° C. A plurality of oxygen radicals are formed from the ozone and reacted with the silicon surface of the substrate to form an activated surface.

Abstract: This application relates to the technical field of biomarkers, and in particular, to a biomarker for diagnosing central precocious puberty (CPP) in females and uses thereof. This application provides a biomarker for diagnosing CPP in females. The biomarker is one, two, or three of leptin, RBP4, or chemerin. Experiments performed in this application show that female children with CPP exhibit leptin, RBP4, and chemerin levels in peripheral blood significantly higher than those of healthy children, and that serum leptin and RBP4 levels in CPP patients change early during development of CPP, indicating that these three adipokines may participate in the development of CPP.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the nitrogen-containing precursor in the processing region. The plasma may be at least partially formed by an RF power operating at less than or about 1,000 W, at a pulsing frequency less than or about 1,000 Hz, and at a duty cycle between about 10% and 90%. The methods may include forming a layer of material on the substrate. The layer of material may be or include a silicon-and-nitrogen-containing material.

Abstract: In some embodiments, a method includes positioning a substrate within a processing chamber. The substrate includes a first low-k film having a first water contact angle. The first low-k film is disposed over an interconnect structure. The method further includes cleaning the substrate within the processing chamber to form a cleaned substrate. The cleaned substrate includes a damaged low-k film having a second water contact angle. The method further includes exposing the cleaned substrate to a recovery precursor to form a recovered substrate. The recovered substrate includes a recovered low-k film. The method further includes exposing the recovered substrate to a UV light source to form a treated substrate. The treated substrate includes a treated low-k film having a third water contact angle. The method further includes depositing a liner layer over the treated substrate via atomic layer deposition (ALD).

Abstract: A method for repairing copper and low-k dielectric films on a substrate is provided. In some embodiments, the method includes positioning the substrate within a process chamber, introducing a reducing agent into the process chamber to remove copper oxide from a copper layer on the substrate, removing the reducing agent from the process chamber, and introducing a recovery precursor into the process chamber to decrease a k value of a low-k film on the substrate.

Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.

Abstract: Printable resin precursor compositions and polishing articles including printable resin precursors are provided. Printable resin precursors include a curable precursor formulation having a viscosity of less than or about 15 cP at 70° which include at least one urethane acrylate oligomer, at least one reactive monomer, and a photoinitiator. The curable precursor formulation exhibits an ultimate tensile strength measured in mPa and an elongation at break (%), where a product of the ultimate tensile strength and the elongation at break is greater than or about 2,000.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-nitrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-carbon-and-nitrogen-containing material on the substrate. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a dielectric constant of less than or about 4.0. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a leakage current at 2 MV/cm of less than or about 3E-08 A/cm2.

Abstract: Polishing pads having porogen-features, methods of manufacturing polishing pads having porogen features, and compositions for manufacturing polishing pads having porogen features, and more particularly, to polishing pads used for chemical mechanical polishing (CMP) of a substrate in electronic device processing are provided. In one aspect, the porogen-forming composition, in proportions based on a total weight of the porogen-forming composition, includes (A) from about 60 to about 80 wt. % of an acrylamide monomer compound selected from acryloylmorpholine, N, N-dimethylacrylamide, or a combination thereof. The curable porogen-forming composition further includes (B) from about 10 to about 40 wt. % of a polyhydroxy compound having two or more hydroxyl groups. The curable porogen-forming composition further includes (C) from about 0.2 wt. % to about 4 wt. % of a photoinitiator component.

Abstract: The disclosure generally relates to polishing pads, methods of manufacturing polishing pads, and formulations for manufacturing polishing pads, and more particularly, to polishing pads used for chemical mechanical polishing (CMP) of a substrate in electronic device processing. In one aspect, a photocurable printing composition containing photopolymerizable compounds and photopolymerization initiator is provided. The photocurable printing composition comprises a urethane acrylate oligomer having a functionality of 2 or more, a nominal viscosity greater than 20,000 cP at 60 degrees Celsius, and a glass transition temperature (Tg) of ?4 degrees Celsius or greater, the urethane acrylate oligomer present from about 20% to about 60% by weight based on a total weight of the photopolymerizable compounds. The photocurable printing composition has a viscosity of 20 centipoise or higher at 70 degrees Celsius.

Abstract: The present invention discloses a method and an apparatus for extracting mountain landscape buildings based on high-resolution remote sensing images. The method comprises: segmenting a remote sensing image, and extracting non-vegetation areas from the remote sensing image by using NDVI; segmenting the non-vegetation areas, and extracting building areas by using NDBI; segmenting the building areas again, and calculating a normalized difference build shadow index NSBI of each patch; calculating NSBI separator of each patch in the non-vegetation areas and setting a separator threshold, and extracting landscape building areas based on the threshold. In the present invention, by introducing a near infrared band in the remote sensing image spectrum, in which there is a significant difference between shadows and non-shadows, the influence of large shadow areas in mountainous shady areas in the remote sensing image on the result of extraction is reduced.

Abstract: The present invention discloses a method and an apparatus for extracting mountain landscape buildings based on high-resolution remote sensing images. The method comprises: segmenting a remote sensing image, and extracting non-vegetation areas from the remote sensing image by using NDVI; segmenting the non-vegetation areas, and extracting building areas by using NDBI; segmenting the building areas again, and calculating a normalized difference build shadow index NSBI of each patch; calculating NSBI separator of each patch in the non-vegetation areas and setting a separator threshold, and extracting landscape building areas based on the threshold. In the present invention, by introducing a near infrared band in the remote sensing image spectrum, in which there is a significant difference between shadows and non-shadows, the influence of large shadow areas in mountainous shady areas in the remote sensing image on the result of extraction is reduced.