Abstract: A method of manufacturing an IC structure includes configuring each of an n-well and a p-well in a first IC die to have a first portion extending in a first direction and second and third portions extending from the first portion in a second direction perpendicular to the first direction, and forming IC devices including a first pickup structure electrically connected to the n-well and a second pickup structure electrically connected to the p-well. Forming the IC devices includes forming a PMOS transistor in the second or third portion of the n-well and forming an NMOS transistor in the second or third portion of the p-well.

Abstract: A voice generating method and apparatus, an electronic device and a storage medium. The specific implementation solution includes: acquiring a text to be processed, and determining an associated text of the text to be processed; acquiring an associated prosodic feature of the associated text; determining an associated text feature of the associated text based on the text to be processed; determining a spectrum feature to be processed of the text to be processed based on the associated prosodic feature and the associated text feature; and generating a target voice corresponding to the text to be processed based on the spectrum feature to be processed.