Abstract: The present invention provides a B7-H3 nanobody, the preparation method and use thereof. The B7-H3 nanobody comprises framework regions 1-4 (FR 1-4) and complementarity determining regions 1-3 (CDR 1-3), can specifically bind to B7-H3, and can be used for detecting B7-H3 molecules, and be used for the treatment of various malignant tumors with abnormal expression of B7-H3 molecule.

Abstract: The present disclosure discloses a novel magnesium phosphate-alkali activated composite cementitious material with rapid hardening, early strength, and high water resistance and a preparation method thereof. The composite cementitious material is a mixture system of a magnesium phosphate cementitious material interweaving and coexisting with an alkali-activated cementitious material, where the alkali-activated cementitious material is prepared by alkali activation of an activatable mineral using a hydration product of a high-alkalinity magnesium phosphate cementitious material prepared from an alkaline hydrophosphate. The composite cementitious material obtained ensures excellent mechanical properties while actively converting part of or all of air-hardening material components into a hydraulic material, so that the problem of poor water resistance of the magnesium phosphate cementitious material can be effectively solved.

Abstract: The disclosed subject matter provides a method for fabricating a three-dimensional transistor. The method includes forming an active region and two isolation structures on a semiconductor substrate. The active region is formed between the two isolation structures. The method further includes forming a photoresist layer on the active region and the isolation structures, forming an opening in the photoresist layer to expose a top surface of the active region and a portion of a top surface of each isolation structure, and then forming a trench on each side of the active region by removing a portion of the corresponding isolation structure exposed in the opening through an etching process using the photoresist layer as an etch mask. After the etching process, the portion of the active region between the two trenches becomes a three-dimensional fin structure. The disclosed method simplifies fabrication process for three-dimensional transistors and reduces product cost.

Abstract: The disclosed subject matter provides a method for fabricating a three-dimensional transistor. The method includes forming an active region and two isolation structures on a semiconductor substrate. The active region is formed between the two isolation structures. The method further includes forming a photoresist layer on the active region and the isolation structures, forming an opening in the photoresist layer to expose a top surface of the active region and a portion of a top surface of each isolation structure, and then forming a trench on each side of the active region by removing a portion of the corresponding isolation structure exposed in the opening through an etching process using the photoresist layer as an etch mask. After the etching process, the portion of the active region between the two trenches becomes a three-dimensional fin structure. The disclosed method simplifies fabrication process for three-dimensional transistors and reduces product cost.

Abstract: The disclosed subject matter provides a method for fabricating a three-dimensional transistor. The method includes forming an active region and two isolation structures on a semiconductor substrate. The active region is formed between the two isolation structures. The method further includes forming a photoresist layer on the active region and the isolation structures, forming an opening in the photoresist layer to expose a top surface of the active region and a portion of a top surface of each isolation structure, and then forming a trench on each side of the active region by removing a portion of the corresponding isolation structure exposed in the opening through an etching process using the photoresist layer as an etch mask. After the etching process, the portion of the active region between the two trenches becomes a three-dimensional fin structure. The disclosed method simplifies fabrication process for three-dimensional transistors and reduces product cost.

Abstract: The disclosed subject matter provides a method for fabricating a three-dimensional transistor. The method includes forming an active region and two isolation structures on a semiconductor substrate. The active region is formed between the two isolation structures. The method further includes forming a photoresist layer on the active region and the isolation structures, forming an opening in the photoresist layer to expose a top surface of the active region and a portion of a top surface of each isolation structure, and then forming a trench on each side of the active region by removing a portion of the corresponding isolation structure exposed in the opening through an etching process using the photoresist layer as an etch mask. After the etching process, the portion of the active region between the two trenches becomes a three-dimensional fin structure. The disclosed method simplifies fabrication process for three-dimensional transistors and reduces product cost.