Abstract: Provided are an interaction method and apparatus in a live streaming room, and a device and a storage medium. The method comprises: in response to a trigger operation for a preset duet entry on a live streaming room page, jumping from the live streaming room page to a camera capture page, wherein a host portrait cutout corresponding to the live streaming room page is displayed on the camera capture page and a capture control is provided on the camera capture page acquiring multimedia information captured by a camera, in response to a trigger operation for the capture control on the camera capture page, wherein the multimedia information comprises an image or a video; and synthesizing the multimedia information with the host portrait cutout to obtain a duet multimedia product.

Abstract: Provided are an interaction method and apparatus in a live streaming room, a device, and a storage medium. The method comprises: in response to a trigger operation for a preset drawing entry on a live streaming room page, jumping to a graphic drawing page from the live streaming room page, a drawing trajectory set for a preset object being displayed on the graphical drawing page; when a drawing stroke on the graphic drawing page is received, matching the drawing stroke with the drawing trajectory; and if it is determined that the drawing stroke is successfully matched with the drawing trajectory, displaying prompt information about successful participation in a preset activity, the preset activity and the preset drawing entry having a correspondence.

Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

Abstract: diboride-silicon carbide (SiC) multiphase ceramic, including: (S1) mixing a transition metal oxide mixed powder, nano carbon black and a silicon hexaboride (SiB6) powder to obtain a precursor powder; and (S2) subjecting the precursor powder to pressureless sintering to obtain the high-entropy carbide-high-entropy diboride-SiC multiphase ceramic with a relative density of 96% or more.

Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.