Abstract: The present disclosure provides a method for determining channel state information and an apparatus, relating to the field of communication technologies, to improve accuracy of channel state information (CSI) fed back by a terminal. In the method, a terminal may determine, based on a plurality of reference signals on a plurality of reference signal resources and a plurality of power offsets, a precoding matrix that matches a channel for actual transmission, so that a channel quality indicator (CQI) obtained based on the precoding matrix conforms to channel quality of the channel for actual transmission. In other words, in this case, the terminal can obtain an accurate CQI, thereby improving accuracy of CSI fed back by the terminal to a network device, and improving transmission performance.

Abstract: This application relates to the field of communication technologies, and in particular, to a channel state information reporting method, an apparatus, and a readable storage medium. The method includes: determining indication information of M coefficients based on reference signals on N reference signal resources, where priorities of the M coefficients are determined based on priorities of the N reference signal resources, and the M coefficients are used to determine a precoding matrix; and sending first information, where the first information includes indication information of K coefficients, and the K coefficients are determined from the M coefficients based on the priorities of the M coefficients. It is ensured as much as possible that more important information can be preferentially reported, to reduce a performance loss of a communication system.

Abstract: A method for preparing an ablation-resistant high-entropy carbide-high-entropy diboride-silicon carbide (SiC) multiphase ceramic, including: (S1) mixing a transition metal oxide mixed powder, nano carbon black and a silicon hexaboride (SiB6) powder to obtain a precursor powder; and (S2) subjecting the precursor powder to pressureless sintering to obtain the high-entropy carbide-high-entropy diboride-SiC multiphase ceramic with a relative density of 96% or more.

Abstract: A method of measuring a feature with a probe microscope. The feature comprises a base, an entrance, and a pair of opposed side walls. The feature is filled with a liquid. The probe microscope comprises a cantilever and a probe tip extending from the cantilever. The method comprises: inserting the probe tip into the feature via the entrance; and performing a measurement of the feature by contacting the base of the feature with the probe tip.

Abstract: Embodiments of this application provide a communication method and apparatus, applicable to a CJT communication system, to resolve a parameter configuration problem of a CJT codebook. The method includes: A network device generates first indication information and second indication information, and sends the first indication information and the second indication information to a terminal device, where the first indication information indicates K first parameter combinations, the second indication information indicates a target second parameter combination determined from multiple candidate second parameter combinations, each of the multiple candidate second parameter combinations corresponds to one target value, a target value corresponding to the target second parameter combination is greater than or equal to a largest value in K values determined based on the K first parameter combinations.

Abstract: This disclosure provides a channel state parameter reporting method, an apparatus, and a system. The method includes: A terminal device obtains a quantity of space domain basis vectors respectively corresponding to N channel state information reference signal (CSI-RS) resources, where the N CSI-RS resources are determined in Q CSI-RS resources, N is a positive integer less than or equal to Q, and Q is a positive integer greater than 1; and sends indication information, where the indication information indicates the quantity of space domain basis vectors respectively corresponding to the N CSI-RS resources.

Abstract: A method of measuring a sample with a probe including a cantilever mount, a cantilever extending from the cantilever mount to a free end, and a probe tip carried by the free end of the cantilever is disclosed. The method includes taking a series of measurements of a sidewall of the sample with the probe; and analysing the series of measurements to determine a characteristic of the sidewall. The measurements are taken during a measurement cycle that includes a pair of measurement drive phases. The measurement drive phases include first and second drive phases in which the probe is driven, respectively, down, then up, next to the sidewall. During one of the drive phases the probe tip interacts with the sidewall, and the series of measurements are taken by measuring an angle of the cantilever as the probe tip interacts with the sidewall during the one of the drive phases.

Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.

Abstract: diboride-silicon carbide (SiC) multiphase ceramic, including: (S1) mixing a transition metal oxide mixed powder, nano carbon black and a silicon hexaboride (SiB6) powder to obtain a precursor powder; and (S2) subjecting the precursor powder to pressureless sintering to obtain the high-entropy carbide-high-entropy diboride-SiC multiphase ceramic with a relative density of 96% or more.

Abstract: Methods of semiconductor processing may include performing a first plasma treatment within a processing chamber to remove a first carbon-containing material. The methods may include performing a second plasma treatment within the processing chamber to remove a first silicon-containing material. The methods may include depositing a second silicon-containing material on surfaces of the processing chamber. The methods may include depositing a second carbon-containing material overlying the second silicon-containing material.