Patents by Inventor Xinyun Xia
Xinyun Xia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7642171Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.Type: GrantFiled: November 16, 2004Date of Patent: January 5, 2010Assignee: Applied Materials, Inc.Inventors: Nitin K. Ingle, Zheng Yuan, Vikash Banthia, Xinyun Xia, Hali J. L. Forstner, Rong Pan
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Patent number: 7456116Abstract: A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.Type: GrantFiled: December 20, 2004Date of Patent: November 25, 2008Assignee: Applied Materials, Inc.Inventors: Nitin K. Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won B. Bang, Yen-Kun V. Wang, Zheng Yuan
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Publication number: 20080115726Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.Type: ApplicationFiled: November 16, 2007Publication date: May 22, 2008Applicant: Applied Materials, Inc.Inventors: Nitin K. Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won B. Bang, Yen-Kun V. Wang
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Patent number: 7335609Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.Type: GrantFiled: August 26, 2005Date of Patent: February 26, 2008Assignee: Applied Materials, Inc.Inventors: Nitin K. Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won B. Bang, Yen-Kun V. Wang
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Publication number: 20070212847Abstract: A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800° C. or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen.Type: ApplicationFiled: April 5, 2007Publication date: September 13, 2007Applicant: Applied Materials, Inc.Inventors: Nitin Ingle, Zheng Yuan, Vikash Banthia, Xinyun Xia, Hali Forstner, Rong Pan
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Publication number: 20070000897Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.Type: ApplicationFiled: June 12, 2006Publication date: January 4, 2007Applicant: Applied Materials, Inc.Inventors: Nitin Ingle, Zheng Yuan, Vikash Banthia, Xinyun Xia, Hali Forstner, Rong Pan
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Publication number: 20060046427Abstract: A chemical vapor deposition method for forming a dielectric material in a trench formed on a substrate. The method includes flowing a silicon-containing precursor into a process chamber housing the substrate, flowing an oxidizing gas into the chamber, and providing a hydroxyl-containing precursor in the process chamber. The method also includes reacting the silicon-containing precursor, oxidizing gas and hydroxyl-containing precursor to form the dielectric material in the trench. The ratio of the silicon-containing precursor to the oxidizing gas flowed into the chamber is increased over time to alter a rate of deposition of the dielectric material.Type: ApplicationFiled: August 26, 2005Publication date: March 2, 2006Applicant: APPLIED MATERIALS, INC., A Delaware corporationInventors: Nitin Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won Bang, Yen-Kun Wang
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Publication number: 20060030165Abstract: A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.Type: ApplicationFiled: November 16, 2004Publication date: February 9, 2006Applicant: APPLIED MATERIALS, INC. A Delaware corporationInventors: Nitin Ingle, Zheng Yuan, Vikash Banthia, Xinyun Xia, Hali Forstner, Rong Pan
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Publication number: 20050142895Abstract: A method to form a silicon oxide layer, where the method includes the step of providing a continuous flow of a silicon-containing precursor to a chamber housing a substrate, where the silicon-containing precursor is selected from TMOS, TEOS, OMTS, OMCTS, and TOMCATS. The method may also include the steps of providing a flow of an oxidizing precursor to the chamber, and causing a reaction between the silicon-containing precursor and the oxidizing precursor to form a silicon oxide layer. The method may further include varying over time a ratio of the silicon-containing precursor:oxidizing precursor flowed into the chamber to alter a rate of deposition of the silicon oxide on the substrate.Type: ApplicationFiled: December 20, 2004Publication date: June 30, 2005Applicant: Applied Materials, Inc.Inventors: Nitin Ingle, Shan Wong, Xinyun Xia, Vikash Banthia, Won Bang, Yen-Kun Wang, Zheng Yuan
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Publication number: 20050136684Abstract: A variety of techniques may be employed, separately or in combination, to improve the gap-filling performance of a dielectric material formed by chemical vapor deposition (CVD). In one approach, a first dielectric layer is deposited using sub-atmospheric chemical vapor deposition (SACVD), followed by a second dielectric layer deposited by high density plasma chemical vapor deposition (HDP-CVD) or plasma-enhanced chemical vapor deposition (PECVD). In another approach, a SACVD dielectric layer is deposited in the presence of reactive ionic species flowed from a remote plasma chamber into the processing chamber, which performs etching during the deposition process. In still another approach, high aspect trenches may be filled utilizing SACVD in combination with oxide layers deposited at high temperatures.Type: ApplicationFiled: December 23, 2003Publication date: June 23, 2005Applicant: APPLIED MATERIALS, INC.Inventors: Kevin Mukai, Kimberly Branshaw, Zheng Yuan, Xinyun Xia, Xiaolin Chen, Dongqing Li, M. Karim, Van Ton, Cary Ching, Steve Ghanayeim, Nitin Ingle
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Patent number: 6905939Abstract: A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.Type: GrantFiled: February 27, 2002Date of Patent: June 14, 2005Assignee: Applied Materials, Inc.Inventors: Zheng Yuan, Xinyun Xia
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Publication number: 20030161951Abstract: A thin layer of silicon oxide is formed by cyclic introduction of a silicon-containing precursor gas and an oxidizing gas separated by an intervening purge step. The resulting thin oxide layer enables subsequent conventional CVD of oxide to produce a more uniform deposited oxide layer over nonhomogenous surfaces, for example the silicon nitride mask/thermal oxide liner surfaces created during fabrication of shallow trench isolation structures.Type: ApplicationFiled: February 27, 2002Publication date: August 28, 2003Applicant: Applied Materials, Inc. a Delaware CorporationInventors: Zheng Yuan, Xinyun Xia