Abstract: Disclosed is a trench gate IGBT. A dummy gate is arranged between two real gates. An emitter metal is in contact with the dummy gate, so that an emitter metal contact area is not limited to an area between trenches. The emitter metal contact area includes an area where the emitter metal is in contact with the dummy gate, thereby enlarging the emitter metal contact area, and accordingly reducing a distance between each of the real gates and the dummy gate. Consequently, the distance between each of the real gates and the dummy gate is no longer affected by a minimum emitter contact area, and a turn-on voltage drop of the trench gate IGBT can be greatly reduced.