Abstract: A manufacturing method of a SiGe HBT is disclosed. Alter an emitter region is formed, an ion implantation is performed with a tilt angle to a base region by using an extrinsic base ion implantation process; boron ions are implanted during the extrinsic base ion implantation with an implantation dose from 1e15 to 1e16 cm?2, an implantation energy from 5 to 30 KeV, and a tilt angle from 5 to 30 degrees. The tilt angle enables the implantation of P-type impurities into the part of the intrinsic base region at the bottom of the emitter window dielectric layer as well as the extrinsic base region, so that the base region excluding the part of the intrinsic base region in contact with the emitter region is entirely doped with P-type impurities, thus reducing the base resistance and improving the frequency characteristic of a transistor without needing to reduce its size.