Abstract: A method for producing sclareol by fermentation of cigar tobacco flower buds is provided, including: mixing cigar tobacco flower buds with deionized water, sterilizing and adding edible yeast, then fermenting at 25-30° C. and 100-300 rpm/min for 24-30 h. This method uses cigar tobacco flower buds as the sole raw material, without adding additional nutrients, and only ferments tobacco flower buds with edible yeast to synthesize sclareol. Meanwhile, this method has extremely high synthesis efficiency.

Abstract: A method for producing sclareol by fermentation of cigar tobacco flower buds is provided, including: mixing cigar tobacco flower buds with deionized water, sterilizing and adding edible yeast, then fermenting at 25-30° C. and 100-300 rpm/min for 24-30 h. This method uses cigar tobacco flower buds as the sole raw material, without adding additional nutrients, and only ferments tobacco flower buds with edible yeast to synthesize sclareol. Meanwhile, this method has extremely high synthesis efficiency.

Abstract: The present disclosure relates to a method and a device for predicting ability of a temporary plugging agent to plug cracks and a storage medium, and includes the following steps: calculating a plane elastic modulus of a core through experiments, acquiring a maximum force load of a specimen, calculating rock fracture toughness through the maximum force load, manufacturing an artificial crack model and placing it in a core holder, preparing temporary plugging deflection fluid by selecting a temporary plugging agent, injecting the temporary plugging deflection fluid into the artificial crack so as to calculate apparent fracture toughness of the temporarily plugged crack, and finally calculating a fracture pressure of the temporarily plugged crack based on the calculated rock fracture toughness and the plane elastic modulus of the core. Through the above method, the present disclosure provides a standard fracture pressure calculation method.

Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.

Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.