Patents by Inventor Xiongfei Yu

Xiongfei Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240373128
    Abstract: The present disclosure provides systems, apparatus, methods, and computer-readable media that support adapting image processing based on the user activity performed while recording an image. In a first aspect, a method of image processing may include determining a type of activity based on sensor data, such as motion sensors and/or image sensor data. The type of activity may be provided to an image processing algorithm, such as an image/video stabilization algorithm, which adapts based on the activity type. For example, a rolling shutter correction may have a strength factor that is adapted to lower values when the type of activity is a panning motion when faces are present in the frame. As another example, another image stabilization (IS) algorithm such as an electronic image stabilization (EIS) algorithm may have adaptive behavior adjusted based on the type of activity. Other aspects and features are also claimed and described.
    Type: Application
    Filed: December 31, 2021
    Publication date: November 7, 2024
    Inventors: Eliad Tsairi, Ron Gaizman, Yu-Chen Hsu, Xiongfei Yu
  • Patent number: 8188550
    Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: May 29, 2012
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Lieyong Yang, Siau Ben Chiah, Ming Lei, Hua Xiao, Xiongfei Yu, Kelvin Tianpeng Guan, Puay San Chia, Chor Shu Cheng, Gary Chia, Chee Kong Leong, Sean Lian, Kin San Pey, Chao Yong Li
  • Publication number: 20090166758
    Abstract: A method of forming an IC is presented. The method includes providing a substrate having a plurality of transistors formed thereon. The transistors have gate stack, source and drain regions. An electrical strap is formed and in contact with at least a portion of at least one sidewall of the gate stack of a first transistor to provide a continuous electrical flowpath over a gate electrode of the first transistor and the source or drain region of a second transistor.
    Type: Application
    Filed: September 30, 2008
    Publication date: July 2, 2009
    Applicant: CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.
    Inventors: Lieyong YANG, Siau Ben CHIAH, Ming LEI, Hua XIAO, Xiongfei YU, Kelvin Tianpeng GUAN, Puay San CHIA, Chor Shu CHENG, Gary CHIA, Chee Kong LEONG, Sean LIAN, Kin San PEY, Chao Yong LI