Patents by Inventor Xiong Ye

Xiong Ye has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250053805
    Abstract: The solution of a partial differential equation can be obtained by computing the inverse operator map between the input and the solution space. Described herein is a multiwavelet-based neural operator learning scheme that compresses the associated operator's kernel using fine-grained wavelets. The system embeds the inverse multiwavelet filters to learn the projection of the kernel onto fixed multiwavelet polynomial bases. The projected kernel is trained at multiple scales derived from using repeated computation of multiwavelet transform. This allows learning the complex dependencies at various scales and results in a resolution-independent scheme. These techniques exploit the fundamental properties of the operator's kernel, which enables numerically efficient representation. These techniques show significantly higher accuracy in a large range of datasets.
    Type: Application
    Filed: September 16, 2022
    Publication date: February 13, 2025
    Inventors: Paul Bogdan, Gaurav Gupta, Xiong Ye Xiao
  • Patent number: 7869473
    Abstract: A DBR laser, such as a semiconductor DBR laser is disclosed having improved frequency modulation performance. The laser includes a split gain electrode and a tuning electrode. A modulating current encoding a data signal is injected into a first section of the gain electrode whereas a substantially DC bias voltage is imposed on a second section of the gain electrode positioned between the first gain electrode and the tuning electrode. The first and second gain electrodes are electrically isolated from each other and the tuning electrode by a large isolation resistance. In some embodiments, the isolation resistance is generated by forming the electrodes on a P+ layer and removing portions of the P+ layer between adjacent electrodes. Capacitors may couple to one or both of the second gain electrode and the tuning electrode.
    Type: Grant
    Filed: March 21, 2008
    Date of Patent: January 11, 2011
    Assignee: Finisar Corporation
    Inventors: Xiong Ye, Hongmin Chen, Yasuhiro Matsui, Daniel Mahgerefteh
  • Publication number: 20090238224
    Abstract: A DBR laser, such as a semiconductor DBR laser is disclosed having improved frequency modulation performance. The laser includes a split gain electrode and a tuning electrode. A modulating current encoding a data signal is injected into a first section of the gain electrode whereas a substantially DC bias voltage is imposed on a second section of the gain electrode positioned between the first gain electrode and the tuning electrode. The first and second gain electrodes are electrically isolated from each other and the tuning electrode by a large isolation resistance. In some embodiments, the isolation resistance is generated by forming the electrodes on a P+ layer and removing portions of the P+ layer between adjacent electrodes. Capacitors may couple to one or both of the second gain electrode and the tuning electrode.
    Type: Application
    Filed: March 21, 2008
    Publication date: September 24, 2009
    Applicant: FINISAR CORPORATION
    Inventors: Xiong Ye, Hongmin Chen, Yasuhiro Matsui, Daniel Mahgerefteh